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SiHFU9210-VB Product details
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SiHFU9210-VB Product Introduction
The SiHFU9210-VB is a **unipolar P-channel MOSFET** in a **TO251** package. It has excellent current carrying capability and low on-resistance and is suitable for applications such as high-voltage switching power supplies, power management and inverters. The maximum drain-source voltage (VDS) of this MOSFET is **-200V**, making it very suitable for operation in high-voltage environments. Its **Vth** (threshold voltage) is **-2V**, which ensures that it can be turned on at a lower gate voltage, and its **RDS(ON)** is **2400mΩ** at **VGS = 4.5V** and **2000mΩ** at **VGS = 10V**, which helps to improve efficiency and reduce power consumption. This MOSFET supports a maximum **ID** of **-3.6A** and uses **Trench technology**, which has excellent switching performance and low conduction losses.
The SiHFU9210-VB is a **unipolar P-channel MOSFET** in a **TO251** package. It has excellent current carrying capability and low on-resistance and is suitable for applications such as high-voltage switching power supplies, power management and inverters. The maximum drain-source voltage (VDS) of this MOSFET is **-200V**, making it very suitable for operation in high-voltage environments. Its **Vth** (threshold voltage) is **-2V**, which ensures that it can be turned on at a lower gate voltage, and its **RDS(ON)** is **2400mΩ** at **VGS = 4.5V** and **2000mΩ** at **VGS = 10V**, which helps to improve efficiency and reduce power consumption. This MOSFET supports a maximum **ID** of **-3.6A** and uses **Trench technology**, which has excellent switching performance and low conduction losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2V | -3.6A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
SiHFU9210-VB Detailed parameter description
- **Package**: TO251
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -3.6A
- **Technology**: Trench technology
- **Application areas**: Suitable for high-efficiency circuits such as high-voltage power management, power conversion and inverters
- **Package**: TO251
- **Configuration**: Unipolar P channel
- **Maximum drain-source voltage (VDS)**: -200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 2400mΩ @ VGS = 4.5V
- 2000mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -3.6A
- **Technology**: Trench technology
- **Application areas**: Suitable for high-efficiency circuits such as high-voltage power management, power conversion and inverters
Domain and module applications：
Applications and modules
1. **Power management and DC-DC converters**
SiHFU9210-VB has a low on-resistance, making it ideal for use as a switching element in power management circuits. It can effectively handle **high voltage** (maximum 200V) power input, so it is widely used in **DC-DC converters**, especially in key modules for power stability, such as **power voltage regulator modules (VRM)** and **battery management systems** (BMS).
2. **Electric vehicles and battery systems**
In applications such as **electric vehicles** (EV) and **hybrid electric vehicles** (HEV), SiHFU9210-VB can be used as a key component in power conversion systems. Especially in **high voltage inverter** and **battery charge management** systems, MOSFETs provide high efficiency and low losses, helping to improve energy conversion efficiency and extend battery life.
3. **Inverter and Solar Panel Systems**
In **Solar Inverters**, SiHFU9210-VB provides efficient power conversion between solar panels and the grid through its good conduction performance and high voltage tolerance. This MOSFET can efficiently handle high power currents and adapt to a wide voltage range, making it an ideal choice for solar power systems.
4. **Power Amplifier and High Frequency Applications**
SiHFU9210-VB's Trench technology makes it outstanding in **RF power amplifiers** and **high-frequency switching power supplies**, which can efficiently switch high power currents and reduce switching losses. This is critical for the design of **communication systems** and **signal processing circuits**, especially in application scenarios that require high-frequency, high-power switching.
5. **Motor Drive Systems**
In **Motor Drivers**, SiHFU9210-VB as a switching element can efficiently regulate current to ensure the stability and efficiency of motor operation. It is especially suitable for high-power **DC motor** drive systems, capable of handling large currents and adapting to high voltage environments, improving the reliability and response speed of the entire motor system.
1. **Power management and DC-DC converters**
SiHFU9210-VB has a low on-resistance, making it ideal for use as a switching element in power management circuits. It can effectively handle **high voltage** (maximum 200V) power input, so it is widely used in **DC-DC converters**, especially in key modules for power stability, such as **power voltage regulator modules (VRM)** and **battery management systems** (BMS).
2. **Electric vehicles and battery systems**
In applications such as **electric vehicles** (EV) and **hybrid electric vehicles** (HEV), SiHFU9210-VB can be used as a key component in power conversion systems. Especially in **high voltage inverter** and **battery charge management** systems, MOSFETs provide high efficiency and low losses, helping to improve energy conversion efficiency and extend battery life.
3. **Inverter and Solar Panel Systems**
In **Solar Inverters**, SiHFU9210-VB provides efficient power conversion between solar panels and the grid through its good conduction performance and high voltage tolerance. This MOSFET can efficiently handle high power currents and adapt to a wide voltage range, making it an ideal choice for solar power systems.
4. **Power Amplifier and High Frequency Applications**
SiHFU9210-VB's Trench technology makes it outstanding in **RF power amplifiers** and **high-frequency switching power supplies**, which can efficiently switch high power currents and reduce switching losses. This is critical for the design of **communication systems** and **signal processing circuits**, especially in application scenarios that require high-frequency, high-power switching.
5. **Motor Drive Systems**
In **Motor Drivers**, SiHFU9210-VB as a switching element can efficiently regulate current to ensure the stability and efficiency of motor operation. It is especially suitable for high-power **DC motor** drive systems, capable of handling large currents and adapting to high voltage environments, improving the reliability and response speed of the entire motor system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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