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SIHFU9210-E3-VB Product details
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SIHFU9210-E3-VB Product Introduction
SIHFU9210-E3-VB is a single P-channel MOSFET in TO251 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is -200V, suitable for various power management and load switching applications. The threshold voltage (Vth) of this MOSFET is -2.5V, at which it starts to conduct, suitable for high-side switch configuration. The on-resistance (RDS(ON)) is 1200mΩ (VGS=4.5V) and 1000mΩ (VGS=10V), respectively, providing lower conduction losses. Although slightly higher than some low on-resistance MOSFETs, it is still suitable for low-power medium and high voltage current applications. The maximum drain current (ID) is -5A, suitable for power modules and load switch applications with smaller current requirements. Its Trench technology effectively improves switching speed and current handling capability.
SIHFU9210-E3-VB is a single P-channel MOSFET in TO251 package, designed for medium and high voltage applications. Its maximum drain-source voltage (VDS) is -200V, suitable for various power management and load switching applications. The threshold voltage (Vth) of this MOSFET is -2.5V, at which it starts to conduct, suitable for high-side switch configuration. The on-resistance (RDS(ON)) is 1200mΩ (VGS=4.5V) and 1000mΩ (VGS=10V), respectively, providing lower conduction losses. Although slightly higher than some low on-resistance MOSFETs, it is still suitable for low-power medium and high voltage current applications. The maximum drain current (ID) is -5A, suitable for power modules and load switch applications with smaller current requirements. Its Trench technology effectively improves switching speed and current handling capability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | 1000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-P | -200V | -2.5V | -5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-P |
SIHFU9210-E3-VB Detailed parameter description
| Parameter | Value | Description|
|---------------|------------------------|----------------------------------------|
| **Package** | TO251 | Surface mount package, suitable for low and medium power applications|
| **Configuration** | Single P-type channel | Suitable for high-side switch or load switching|
| **Maximum drain-source voltage (VDS)** | -200V | Suitable for medium and high voltage applications, maximum support -200V voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage|
| **Threshold voltage (Vth)** | -2.5V | Indicates the voltage at which the MOSFET starts to turn on|
| **On-resistance (RDS(ON))** | 1200mΩ @ VGS = 4.5V | At VGS = 4.5V |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | -5A | Maximum drain current for low current applications|
| **Technology** | Trench | Trench technology improves conduction performance and switching speed|
| Parameter | Value | Description|
|---------------|------------------------|----------------------------------------|
| **Package** | TO251 | Surface mount package, suitable for low and medium power applications|
| **Configuration** | Single P-type channel | Suitable for high-side switch or load switching|
| **Maximum drain-source voltage (VDS)** | -200V | Suitable for medium and high voltage applications, maximum support -200V voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage|
| **Threshold voltage (Vth)** | -2.5V | Indicates the voltage at which the MOSFET starts to turn on|
| **On-resistance (RDS(ON))** | 1200mΩ @ VGS = 4.5V | At VGS = 4.5V |
| **On-resistance (RDS(ON))** | 1000mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | -5A | Maximum drain current for low current applications|
| **Technology** | Trench | Trench technology improves conduction performance and switching speed|
Domain and module applications：
Applications and module examples
1. **Power management system**
SIHFU9210-E3-VB can be widely used as a switching element in power management systems, especially in medium and high voltage power converters and DC-DC converters. Despite its high on-resistance, its -200V maximum drain-source voltage makes it suitable for high voltage power management applications, which can effectively control the flow of current, and its low on-resistance can reduce power loss.
2. **Load switch**
In load switch applications, SIHFU9210-E3-VB can be used as a high-side switch for current switching, which is suitable for power management of battery-powered devices, power tools, and other small electrical devices. It can effectively control the switching of current, and due to the low threshold voltage (-2.5V), it can be enabled at a smaller gate voltage.
3. **Electric Vehicle (EV) Power Management**
MOSFETs are widely used in electric vehicles, and SIHFU9210-E3-VB is very suitable for battery management and motor control due to its high voltage tolerance. Especially in the battery protection circuit of electric vehicles, this MOSFET can disconnect the current when the battery voltage is too high or too low to prevent battery damage.
4. **Battery Charger and Protection Circuit**
In the battery charger or protection circuit, SIHFU9210-E3-VB can act as a switching element to control the battery charging process to ensure that the battery is not damaged by overcharging or over-discharging. Its -200V withstand voltage capability makes it suitable for most lithium batteries and other high-voltage battery systems.
5. **Solar Panel Power Management**
Solar cell systems usually require efficient power converters and control circuits. SIHFU9210-E3-VB can be used in the power management module of solar panels to efficiently convert the electricity collected by solar energy into usable electricity, especially suitable for high-voltage power supply regulation and inverter applications.
6. **Automotive Electronic Control Unit**
In automotive electronic systems, MOSFETs are often used as switching elements to control on-board electrical systems such as on-board batteries, lighting systems or motor control. As a P-type MOSFET, SIHFU9210-E3-VB is suitable for these automotive electronic systems that need to operate stably in a high-voltage environment.
In summary, SIHFU9210-E3-VB is suitable for a variety of medium- and high-voltage, high-efficiency power control, load switching and battery management applications, especially in the fields of electric vehicles, solar systems and battery protection circuits.
1. **Power management system**
SIHFU9210-E3-VB can be widely used as a switching element in power management systems, especially in medium and high voltage power converters and DC-DC converters. Despite its high on-resistance, its -200V maximum drain-source voltage makes it suitable for high voltage power management applications, which can effectively control the flow of current, and its low on-resistance can reduce power loss.
2. **Load switch**
In load switch applications, SIHFU9210-E3-VB can be used as a high-side switch for current switching, which is suitable for power management of battery-powered devices, power tools, and other small electrical devices. It can effectively control the switching of current, and due to the low threshold voltage (-2.5V), it can be enabled at a smaller gate voltage.
3. **Electric Vehicle (EV) Power Management**
MOSFETs are widely used in electric vehicles, and SIHFU9210-E3-VB is very suitable for battery management and motor control due to its high voltage tolerance. Especially in the battery protection circuit of electric vehicles, this MOSFET can disconnect the current when the battery voltage is too high or too low to prevent battery damage.
4. **Battery Charger and Protection Circuit**
In the battery charger or protection circuit, SIHFU9210-E3-VB can act as a switching element to control the battery charging process to ensure that the battery is not damaged by overcharging or over-discharging. Its -200V withstand voltage capability makes it suitable for most lithium batteries and other high-voltage battery systems.
5. **Solar Panel Power Management**
Solar cell systems usually require efficient power converters and control circuits. SIHFU9210-E3-VB can be used in the power management module of solar panels to efficiently convert the electricity collected by solar energy into usable electricity, especially suitable for high-voltage power supply regulation and inverter applications.
6. **Automotive Electronic Control Unit**
In automotive electronic systems, MOSFETs are often used as switching elements to control on-board electrical systems such as on-board batteries, lighting systems or motor control. As a P-type MOSFET, SIHFU9210-E3-VB is suitable for these automotive electronic systems that need to operate stably in a high-voltage environment.
In summary, SIHFU9210-E3-VB is suitable for a variety of medium- and high-voltage, high-efficiency power control, load switching and battery management applications, especially in the fields of electric vehicles, solar systems and battery protection circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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