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SIHFU430A-E3-VB Product details
Back to previous pageProduct introduction：
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SIHFU430A-E3-VB is a unipolar N-channel MOSFET in TO251 package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V, suitable for high voltage power conversion and power management systems. This product uses SJ_Multi-EPI technology to provide better current conduction capability and lower switching losses, with an RDS(ON) value of 950mΩ (at VGS=10V). With a maximum drain current of 5A, it is suitable for medium power applications. Its low RDS(ON) characteristics make it perform well in situations requiring high efficiency and low heat generation.
2. **
SIHFU430A-E3-VB is a unipolar N-channel MOSFET in TO251 package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V, suitable for high voltage power conversion and power management systems. This product uses SJ_Multi-EPI technology to provide better current conduction capability and lower switching losses, with an RDS(ON) value of 950mΩ (at VGS=10V). With a maximum drain current of 5A, it is suitable for medium power applications. Its low RDS(ON) characteristics make it perform well in situations requiring high efficiency and low heat generation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
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- **Package type**: TO251
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 950mΩ@VGS=10V
- **ID (maximum drain current)**: 5A
- **Technology**: SJ_Multi-EPI
This MOSFET provides a relatively low RDS(ON) at a high voltage of VDS 650V and can support a drain current of up to 5A, making it suitable for power regulation and current control under high voltage conditions. Its SJ_Multi-EPI technology can increase switching speed and reduce switching losses over multiple operating cycles.
3. **
- **Package type**: TO251
- **Configuration**: Unipolar N-channel
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 950mΩ@VGS=10V
- **ID (maximum drain current)**: 5A
- **Technology**: SJ_Multi-EPI
This MOSFET provides a relatively low RDS(ON) at a high voltage of VDS 650V and can support a drain current of up to 5A, making it suitable for power regulation and current control under high voltage conditions. Its SJ_Multi-EPI technology can increase switching speed and reduce switching losses over multiple operating cycles.
3. **
Domain and module applications：
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SIHFU430A-E3-VB is widely used in many fields and modules due to its high voltage carrying capacity and low conduction loss:
- **Switching Power Supply (SMPS)**: Used for power regulation in the power conversion process in high voltage switching power supplies. It is particularly suitable for use as the main switch in AC-DC or DC-DC converters to ensure efficient energy conversion.
- **Motor Drive**: As a switching element in motor control systems, it is suitable for motor drives, inverters, etc., and can provide stable current control and efficient power conversion.
- **Electric Vehicle (EV)**: In the power system and battery management system of electric vehicles, as a power switch module, it can withstand higher voltages and provide effective current regulation to ensure efficient battery charging and discharging.
- **Industrial Power Management**: In industrial automation equipment, UPS (uninterruptible power supply) systems and power control modules, it provides reliable high-voltage power switching capabilities to ensure long-term stable operation of the system.
- **Home appliances**: High-efficiency power management modules are used in high-power home appliances such as air conditioners and electric heating equipment to provide safe and stable conversion of high voltage and high power.
SIHFU430A-E3-VB is widely used in many fields and modules due to its high voltage carrying capacity and low conduction loss:
- **Switching Power Supply (SMPS)**: Used for power regulation in the power conversion process in high voltage switching power supplies. It is particularly suitable for use as the main switch in AC-DC or DC-DC converters to ensure efficient energy conversion.
- **Motor Drive**: As a switching element in motor control systems, it is suitable for motor drives, inverters, etc., and can provide stable current control and efficient power conversion.
- **Electric Vehicle (EV)**: In the power system and battery management system of electric vehicles, as a power switch module, it can withstand higher voltages and provide effective current regulation to ensure efficient battery charging and discharging.
- **Industrial Power Management**: In industrial automation equipment, UPS (uninterruptible power supply) systems and power control modules, it provides reliable high-voltage power switching capabilities to ensure long-term stable operation of the system.
- **Home appliances**: High-efficiency power management modules are used in high-power home appliances such as air conditioners and electric heating equipment to provide safe and stable conversion of high voltage and high power.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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