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SIHFU320-E3-VB Product details
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SIHFU320-E3-VB MOSFET Product Introduction
**SIHFU320-E3-VB** is a unipolar N-type MOSFET in TO251 package with high voltage resistance and good switching characteristics, suitable for high voltage power conversion, industrial electrical drive and other applications. This MOSFET adopts **SJ_Multi-EPI** technology (Super Junction Multi-Epitaxy), which enables it to provide lower on-resistance (RDS(ON)) and higher current handling capability, especially suitable for high-efficiency switching power supplies and power conversion systems. With a maximum drain-source voltage (VDS) of 650V, it is suitable for stable operation in high voltage environments.
**SIHFU320-E3-VB** is a unipolar N-type MOSFET in TO251 package with high voltage resistance and good switching characteristics, suitable for high voltage power conversion, industrial electrical drive and other applications. This MOSFET adopts **SJ_Multi-EPI** technology (Super Junction Multi-Epitaxy), which enables it to provide lower on-resistance (RDS(ON)) and higher current handling capability, especially suitable for high-efficiency switching power supplies and power conversion systems. With a maximum drain-source voltage (VDS) of 650V, it is suitable for stable operation in high voltage environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
SIHFU320-E3-VB MOSFET detailed parameter description
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SIHFU320-E3-VB |
| **Package** | TO251 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 650V |
| **Maximum gate-source voltage** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 950mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI technology|
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SIHFU320-E3-VB |
| **Package** | TO251 |
| **Configuration** | Unipolar N-type MOSFET |
| **Maximum drain-source voltage** | 650V |
| **Maximum gate-source voltage** | ±30V |
| **Threshold voltage (Vth)** | 3.5V |
| **On-resistance (RDS(ON))** | 950mΩ (VGS=10V) |
| **Maximum drain current (ID)** | 5A |
| **Technology** | SJ_Multi-EPI technology|
Domain and module applications：
SIHFU320-E3-VB MOSFET application areas and module examples
1. **High-efficiency switching power supply (SMPS)**
SIHFU320-E3-VB has a maximum withstand voltage of 650V and a low on-resistance (RDS(ON)), making it very suitable for use in high-efficiency switching power supplies (SMPS). In SMPS modules, MOSFETs are used for high-frequency switching operations and are responsible for the on-off of current. Its low on-resistance can reduce power loss and improve system efficiency, especially in power conversion processes that require large currents and high voltages, ensuring stable and efficient operation.
2. **Inverters and frequency converters**
In inverters and frequency converters, MOSFETs are widely used in the conversion part of power electronics. SIHFU320-E3-VB is suitable for the conversion process of high-voltage DC to AC due to its 650V withstand voltage performance. Especially in applications such as solar inverters, motor drives, and wind power inverters, the efficient switching characteristics and low on-resistance of this MOSFET help reduce losses and improve conversion efficiency.
3. **Industrial Electric Drive Systems**
SIHFU320-E3-VB can be used for motor control and other high-voltage control applications in industrial electric drive systems. Its high voltage resistance and moderate current capability enable it to provide stable control in high-power industrial motor drives. MOSFET is responsible for regulating the flow of current to accurately control the operating state of the motor and is widely used in automation equipment, robots, and power transmission systems.
4. **Electric Vehicle (EV) Charging System**
In the charging system of electric vehicles, SIHFU320-E3-VB can be used for high-efficiency current switching between the DC power supply and the battery. Due to its high voltage resistance and low on-resistance, it can provide low-loss, high-efficiency current switching in electric vehicle charging modules. It is particularly suitable for fast charging systems and high-efficiency battery charging equipment.
5. **Power Factor Correction (PFC) Module**
In the power factor correction (PFC) circuit, MOSFET plays an important role. The high withstand voltage and low on-resistance characteristics of SIHFU320-E3-VB enable it to perform well in PFC circuits, especially in the AC-DC conversion process with high voltage input. It can achieve precise power factor correction while reducing power loss and improving the overall energy efficiency of the system.
In short, the high withstand voltage (650V) and low on-resistance of SIHFU320-E3-VB make it an ideal choice for high-efficiency power conversion, inverters, electric vehicle charging systems, and industrial drive systems. The **SJ_Multi-EPI** technology it adopts ensures the excellent performance of this MOSFET in high-current, high-voltage applications, which can effectively improve system efficiency and reduce energy loss.
1. **High-efficiency switching power supply (SMPS)**
SIHFU320-E3-VB has a maximum withstand voltage of 650V and a low on-resistance (RDS(ON)), making it very suitable for use in high-efficiency switching power supplies (SMPS). In SMPS modules, MOSFETs are used for high-frequency switching operations and are responsible for the on-off of current. Its low on-resistance can reduce power loss and improve system efficiency, especially in power conversion processes that require large currents and high voltages, ensuring stable and efficient operation.
2. **Inverters and frequency converters**
In inverters and frequency converters, MOSFETs are widely used in the conversion part of power electronics. SIHFU320-E3-VB is suitable for the conversion process of high-voltage DC to AC due to its 650V withstand voltage performance. Especially in applications such as solar inverters, motor drives, and wind power inverters, the efficient switching characteristics and low on-resistance of this MOSFET help reduce losses and improve conversion efficiency.
3. **Industrial Electric Drive Systems**
SIHFU320-E3-VB can be used for motor control and other high-voltage control applications in industrial electric drive systems. Its high voltage resistance and moderate current capability enable it to provide stable control in high-power industrial motor drives. MOSFET is responsible for regulating the flow of current to accurately control the operating state of the motor and is widely used in automation equipment, robots, and power transmission systems.
4. **Electric Vehicle (EV) Charging System**
In the charging system of electric vehicles, SIHFU320-E3-VB can be used for high-efficiency current switching between the DC power supply and the battery. Due to its high voltage resistance and low on-resistance, it can provide low-loss, high-efficiency current switching in electric vehicle charging modules. It is particularly suitable for fast charging systems and high-efficiency battery charging equipment.
5. **Power Factor Correction (PFC) Module**
In the power factor correction (PFC) circuit, MOSFET plays an important role. The high withstand voltage and low on-resistance characteristics of SIHFU320-E3-VB enable it to perform well in PFC circuits, especially in the AC-DC conversion process with high voltage input. It can achieve precise power factor correction while reducing power loss and improving the overall energy efficiency of the system.
In short, the high withstand voltage (650V) and low on-resistance of SIHFU320-E3-VB make it an ideal choice for high-efficiency power conversion, inverters, electric vehicle charging systems, and industrial drive systems. The **SJ_Multi-EPI** technology it adopts ensures the excellent performance of this MOSFET in high-current, high-voltage applications, which can effectively improve system efficiency and reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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