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SIHFU310-E3-VB Product details
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SIHFU310-E3-VB is a high-voltage N-type MOSFET in TO251 package using Planar technology. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for medium and high voltage power supply applications. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, which allows it to operate stably at higher gate voltages. SIHFU310-E3-VB has a low on-resistance (RDS(ON)) of 4300mΩ (VGS=10V) and a maximum drain current (ID) of 2A. This MOSFET provides stable switching performance and high efficiency, and is suitable for power conversion, motor drives, and power management systems that require high voltage handling and reliability.
**
SIHFU310-E3-VB is a high-voltage N-type MOSFET in TO251 package using Planar technology. The device has a maximum drain-source voltage (VDS) of 650V and is suitable for medium and high voltage power supply applications. Its gate-source voltage (VGS) is ±30V and its threshold voltage (Vth) is 3.5V, which allows it to operate stably at higher gate voltages. SIHFU310-E3-VB has a low on-resistance (RDS(ON)) of 4300mΩ (VGS=10V) and a maximum drain current (ID) of 2A. This MOSFET provides stable switching performance and high efficiency, and is suitable for power conversion, motor drives, and power management systems that require high voltage handling and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
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- **Package type**: TO251
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 4300mΩ (VGS=10V)
- **ID (drain current)**: 2A
- **Technology**: Planar
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO251
- **Configuration**: Single channel N-type
- **VDS (drain-source voltage)**: 650V
- **VGS (gate-source voltage)**: ±30V
- **Vth (threshold voltage)**: 3.5V
- **RDS(ON)**: 4300mΩ (VGS=10V)
- **ID (drain current)**: 2A
- **Technology**: Planar
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SIHFU310-E3-VB is suitable for a wide range of high-voltage power management and power control systems, especially where high voltage tolerance is required. Its maximum drain-source voltage is 650V, making it ideal for power conversion applications such as high-power DC-DC converters, power adapters, and battery chargers. In addition, as an N-type MOSFET, it also performs well in switching power supplies, motor drive systems, and power amplifiers, providing efficient switching control and reducing system losses. For industrial power systems and renewable energy systems (such as photovoltaic inverters), this device also has excellent voltage control and efficiency improvement functions to help optimize overall system performance. Due to its wide operating temperature range, SIHFU310-E3-VB can also operate stably in harsh environments and is suitable for industrial applications with high temperatures or poor cooling conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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