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SIHFU220-E3-VB Product details
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SIHFU220-E3-VB MOSFET Detailed Product Introduction
**Product Name**: SIHFU220-E3-VB
**Package Type**: TO251
**Configuration**: Unipolar N-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: 200V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 3V
**On-Resistance (RDS(ON))**: 270mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 8A
**Product Overview**:
SIHFU220-E3-VB is a high performance N-channel MOSFET in TO251 package, suitable for power management and power conversion applications requiring 200V voltage and higher switching frequency. With its low on-resistance (RDS(ON)) and high drain current (8A), this MOSFET is well suited for medium power applications. Based on Trench technology, it offers low conduction losses and can be used in high-efficiency power conversion, power conditioning and current control circuits. The device is suitable for use in applications that require higher voltage handling capabilities and lower losses, especially in electric drives, industrial power supplies and consumer electronics.
**Product Name**: SIHFU220-E3-VB
**Package Type**: TO251
**Configuration**: Unipolar N-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: 200V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 3V
**On-Resistance (RDS(ON))**: 270mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: 8A
**Product Overview**:
SIHFU220-E3-VB is a high performance N-channel MOSFET in TO251 package, suitable for power management and power conversion applications requiring 200V voltage and higher switching frequency. With its low on-resistance (RDS(ON)) and high drain current (8A), this MOSFET is well suited for medium power applications. Based on Trench technology, it offers low conduction losses and can be used in high-efficiency power conversion, power conditioning and current control circuits. The device is suitable for use in applications that require higher voltage handling capabilities and lower losses, especially in electric drives, industrial power supplies and consumer electronics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | 270mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 200V | 3V | 8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
SIHFU220-E3-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: 200V
The maximum drain-source voltage is 200V, which means that the MOSFET can operate at a maximum reverse voltage of 200V. This high voltage level makes SIHFU220-E3-VB suitable for applications such as high-voltage power management, electric drives, and inverters.
- **VGS (maximum gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, which adapts to a wide range of control voltages. This voltage range provides good flexibility, is compatible with a variety of control circuits, and provides sufficient control space for the design.
- **Vth (threshold voltage)**: 3V
The threshold voltage of 3V means that the MOSFET starts to turn on when the gate voltage reaches 3V. The relatively high threshold voltage makes it more stable under the control of the drive circuit, suitable for applications that require higher drive voltages.
- **RDS(ON) (On-resistance)**: 270mΩ @ VGS = 10V
At VGS=10V, the RDS(ON) is 270mΩ, indicating that the MOSFET has a low resistance in the on state. This helps reduce switching losses and heat generation, improving the efficiency of the system. Although its on-resistance is higher than some MOSFETs with lower RDS(ON), it is still within a reasonable range and suitable for medium power applications.
- **ID (Maximum drain current)**: 8A
The maximum drain current is 8A, which is suitable for applications with medium current carrying. The device is capable of handling 8A of current and is suitable for a variety of power conversion and power conditioning circuits that require medium power switches.
- **VDS (maximum drain-source voltage)**: 200V
The maximum drain-source voltage is 200V, which means that the MOSFET can operate at a maximum reverse voltage of 200V. This high voltage level makes SIHFU220-E3-VB suitable for applications such as high-voltage power management, electric drives, and inverters.
- **VGS (maximum gate-source voltage)**: ±20V
The maximum gate-source voltage is ±20V, which adapts to a wide range of control voltages. This voltage range provides good flexibility, is compatible with a variety of control circuits, and provides sufficient control space for the design.
- **Vth (threshold voltage)**: 3V
The threshold voltage of 3V means that the MOSFET starts to turn on when the gate voltage reaches 3V. The relatively high threshold voltage makes it more stable under the control of the drive circuit, suitable for applications that require higher drive voltages.
- **RDS(ON) (On-resistance)**: 270mΩ @ VGS = 10V
At VGS=10V, the RDS(ON) is 270mΩ, indicating that the MOSFET has a low resistance in the on state. This helps reduce switching losses and heat generation, improving the efficiency of the system. Although its on-resistance is higher than some MOSFETs with lower RDS(ON), it is still within a reasonable range and suitable for medium power applications.
- **ID (Maximum drain current)**: 8A
The maximum drain current is 8A, which is suitable for applications with medium current carrying. The device is capable of handling 8A of current and is suitable for a variety of power conversion and power conditioning circuits that require medium power switches.
Domain and module applications：
SIHFU220-E3-VB MOSFET Application Examples
1. **Power Management and DC-DC Converters**:
SIHFU220-E3-VB is well suited for medium power DC-DC converters, voltage regulators, and other power management modules due to its high VDS and low on-resistance. In these applications, the MOSFET needs to handle higher voltages and maintain low energy losses when switching. Its 200V VDS enables it to efficiently convert supply voltages, providing stable current control and load response.
2. **Industrial Power Supplies and Electric Drive Systems**:
This MOSFET is also suitable for industrial power supplies and electric drive systems, especially where efficient power conversion is required. As a switching element in motor controllers, power inverters, and industrial drive systems, the SIHFU220-E3-VB can effectively handle higher currents and maintain low conduction losses, thereby improving the overall efficiency of the system.
3. **Solar Inverters and Battery Management Systems**:
In solar inverters and battery management systems, the SIHFU220-E3-VB can be used as a high voltage switching element to help control the current during battery charging and discharging. Its higher VDS makes it suitable for handling the high voltages that may appear in solar inverters, while its low on-resistance ensures efficient operation of the system.
4. **Consumer Electronics and Battery-Powered Devices**:
The SIHFU220-E3-VB also has application potential in consumer electronics, especially in products that require medium power power management and efficient power conversion, such as battery chargers, portable power modules, etc. The low on-resistance characteristics of the MOSFET help reduce energy losses and extend battery life.
5. **High-Frequency Switching Power Supplies and Power Amplifiers**:
The high-frequency switching characteristics of the SIHFU220-E3-VB make it suitable for power amplifiers that require fast switching operations, RF amplifiers, and other power conditioning circuits that require high-frequency signals. It is able to efficiently convert power and maintain stable performance at high frequency operation.
In summary, the SIHFU220-E3-VB MOSFET is suitable for power management, electric drive, battery management, and consumer electronics that require high voltage handling and medium current carrying. Its low on-resistance and high voltage capability enable it to provide high efficiency and low loss performance in a variety of power and drive systems.
1. **Power Management and DC-DC Converters**:
SIHFU220-E3-VB is well suited for medium power DC-DC converters, voltage regulators, and other power management modules due to its high VDS and low on-resistance. In these applications, the MOSFET needs to handle higher voltages and maintain low energy losses when switching. Its 200V VDS enables it to efficiently convert supply voltages, providing stable current control and load response.
2. **Industrial Power Supplies and Electric Drive Systems**:
This MOSFET is also suitable for industrial power supplies and electric drive systems, especially where efficient power conversion is required. As a switching element in motor controllers, power inverters, and industrial drive systems, the SIHFU220-E3-VB can effectively handle higher currents and maintain low conduction losses, thereby improving the overall efficiency of the system.
3. **Solar Inverters and Battery Management Systems**:
In solar inverters and battery management systems, the SIHFU220-E3-VB can be used as a high voltage switching element to help control the current during battery charging and discharging. Its higher VDS makes it suitable for handling the high voltages that may appear in solar inverters, while its low on-resistance ensures efficient operation of the system.
4. **Consumer Electronics and Battery-Powered Devices**:
The SIHFU220-E3-VB also has application potential in consumer electronics, especially in products that require medium power power management and efficient power conversion, such as battery chargers, portable power modules, etc. The low on-resistance characteristics of the MOSFET help reduce energy losses and extend battery life.
5. **High-Frequency Switching Power Supplies and Power Amplifiers**:
The high-frequency switching characteristics of the SIHFU220-E3-VB make it suitable for power amplifiers that require fast switching operations, RF amplifiers, and other power conditioning circuits that require high-frequency signals. It is able to efficiently convert power and maintain stable performance at high frequency operation.
In summary, the SIHFU220-E3-VB MOSFET is suitable for power management, electric drive, battery management, and consumer electronics that require high voltage handling and medium current carrying. Its low on-resistance and high voltage capability enable it to provide high efficiency and low loss performance in a variety of power and drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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