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SIHFU1N60A-E3-VB Product details
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1. Product Introduction (SIHFU1N60A-E3-VB)
SIHFU1N60A-E3-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V. The device has a drain current (ID) of 2A and is suitable for switching and amplification circuits in medium power applications. Its gate-source voltage (VGS) is up to ±30V, with a high threshold voltage (Vth = 3.5V), and on-resistance (RDS(ON) = 4300mΩ @ VGS = 10V) for applications requiring high switching efficiency. Manufactured using planar technology, it is reliable and stable and is widely used in power electronics, home appliance control, and efficient power management.
SIHFU1N60A-E3-VB is a single N-channel MOSFET in TO251 package, designed for high voltage applications, with a maximum drain-source voltage (VDS) of 650V. The device has a drain current (ID) of 2A and is suitable for switching and amplification circuits in medium power applications. Its gate-source voltage (VGS) is up to ±30V, with a high threshold voltage (Vth = 3.5V), and on-resistance (RDS(ON) = 4300mΩ @ VGS = 10V) for applications requiring high switching efficiency. Manufactured using planar technology, it is reliable and stable and is widely used in power electronics, home appliance control, and efficient power management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | 4300mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
2. Detailed parameter description
- **Model**: SIHFU1N60A-E3-VB
- **Package**: TO251
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
- **Model**: SIHFU1N60A-E3-VB
- **Package**: TO251
- **Configuration**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **RDS(ON)**: 4300mΩ @ VGS = 10V
- **Drain current (ID)**: 2A
- **Technology**: Plannar technology
Domain and module applications：
### 3. Applications and Modules
#### Power Management
SIHFU1N60A-E3-VB is suitable for medium power power management applications. Its high voltage withstand capability of 650V and drain current of 2A make it widely used in high voltage power converters (such as AC-DC converters, DC-DC converters), especially in situations where efficient switching and stable performance are required. The device can effectively reduce power loss and improve system efficiency.
#### TV and home appliance control
SIHFU1N60A-E3-VB can be used as an efficient switching element in home appliances such as TVs, air conditioners, refrigerators, etc. In home appliance power modules, it can effectively switch voltage and control current. Due to its low RDS(ON), it helps reduce energy loss and improve the energy efficiency of electrical equipment.
#### Electronic Load and Motor Control
In motor drive and electronic load control systems, the SIHFU1N60A-E3-VB can be used as a switching element to regulate motor operation or load changes. Its high voltage withstand capability and low on-resistance make it suitable for motor control and load regulation in various industrial applications, especially in environments that require high reliability and stability.
#### Lighting Power Control
This MOSFET is also suitable for controlling LED driver power supplies. In LED lighting systems, the SIHFU1N60A-E3-VB can efficiently control the flow of current to the LED, thereby improving the overall efficiency of the lighting system. Due to its stability and high voltage capability, it is particularly suitable for high-efficiency lighting modules that need to operate continuously for a long time.
#### Automotive Electronics
The SIHFU1N60A-E3-VB also has potential in automotive electronics applications, especially in automotive power management, DC-DC conversion, and battery management systems. It can effectively control the power flow in high voltage circuits and provide precise switching control to ensure efficient operation of battery management and motor drive systems.
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SIHFU1N60A-E3-VB, with its 650V withstand voltage, low RDS(ON) and 2A current handling capability, provides efficient and reliable switching solutions in power management, home appliance control, electronic load regulation and automotive electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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