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SIHFR9310T-VB Product details

Product introduction:

SIHFR9310T-VB MOSFET Product Introduction

**SIHFR9310T-VB** is a unipolar P-type MOSFET in TO252 package, suitable for high voltage and high power switching applications. This MOSFET has a maximum drain-source voltage (VDS) of -500V and can operate reliably in high voltage environments. Its on-resistance (RDS(ON)) is large, but it can provide stable current control in specific application scenarios. SIHFR9310T-VB uses planar technology and has good switching characteristics. It is suitable for power systems, inverters and other power conversion modules that require high voltage resistance and medium current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -500V -3V -2A 3900mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -500V -3V -2A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -500V -3V -2A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P
SIHFR9310T-VB MOSFET detailed parameter description

| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SIHFR9310T-VB |
| **Package** | TO252 |
| **Configuration** | Unipolar P-type MOSFET |
| **Maximum drain-source voltage** | -500V |
| **Maximum gate-source voltage** | ±20V |
| **Threshold voltage (Vth)** | -3V |
| **On-resistance (RDS(ON))** | 4875mΩ (VGS=4.5V) |
| | 3900mΩ (VGS=10V) |
| **Maximum drain current (ID)** | -2A |
| **Technology** | Plannar technology|

Domain and module applications:

SIHFR9310T-VB MOSFET application areas and module examples

1. **High-voltage power conversion module**
Due to its maximum drain-source voltage (VDS) of -500V, SIHFR9310T-VB is suitable for high-voltage power conversion systems such as AC-DC power supplies, DC-DC converters, etc. It can withstand higher voltage loads while providing stable switching performance. In these modules, P-type MOSFET is used to control the flow of current to ensure stable operation of the power system.

2. **Inverter**
In inverters, especially those used in solar power generation or power conversion systems, SIHFR9310T-VB can be used as a current control switch to ensure that the inverter can stably convert DC power into AC power. Although its on-resistance is large, its high withstand voltage performance and stability make it suitable for occasions requiring higher withstand voltage.

3. **Power tools and electrical drive equipment**
In power tools or other electrical drive equipment, SIHFR9310T-VB can be used in the power control circuit of the drive motor. Since it can withstand a maximum voltage of up to -500V, it can be used in drive circuits that require high voltage and current switching, and is suitable for high-power and high-efficiency equipment design.

4. **Battery Management System (BMS)**
In the battery management system (BMS), SIHFR9310T-VB is suitable for switching applications that require high voltage resistance, especially in the process of precise control of battery charging and discharging. By adjusting the switching state of MOSFET, battery charging management can be achieved, battery efficiency can be optimized, and its safety can be ensured.

5. **High-voltage current protection circuit**
In some high-voltage current protection circuits, SIHFR9310T-VB MOSFET can be used to protect the circuit from overload current. Its higher drain-source voltage ensures that the circuit can work normally when facing high voltage shock, while its on-resistance and current limiting capability effectively protect the downstream circuit from damage.

In short, SIHFR9310T-VB is widely used in high voltage and high power applications such as power conversion, battery management, power tools, and electrical drive equipment due to its high voltage resistance and moderate current capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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