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SIHFR9220T-VB Product details
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SIHFR9220T-VB MOSFET Detailed Product Profile
**Product Name**: SIHFR9220T-VB
**Package Type**: TO252
**Configuration**: Unipolar P-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: -200V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -2.5V
**On-Resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: -3.6A
**Product Overview**:
SIHFR9220T-VB It is a high-performance P-channel MOSFET in TO252 package, suitable for high-voltage, high-power switching applications. It has a maximum drain-source voltage of 200V and a maximum drain current of 3.6A, suitable for power management and switching circuits that require high voltage handling and medium current carrying. The device is manufactured based on Trench technology and provides low on-resistance (RDS(ON)), enabling it to operate in low-energy and high-efficiency applications. SIHFR9220T-VB has a wide range of application potentials in automotive electronics, industrial power supplies, and battery management.
**Product Name**: SIHFR9220T-VB
**Package Type**: TO252
**Configuration**: Unipolar P-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: -200V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -2.5V
**On-Resistance (RDS(ON))**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: -3.6A
**Product Overview**:
SIHFR9220T-VB It is a high-performance P-channel MOSFET in TO252 package, suitable for high-voltage, high-power switching applications. It has a maximum drain-source voltage of 200V and a maximum drain current of 3.6A, suitable for power management and switching circuits that require high voltage handling and medium current carrying. The device is manufactured based on Trench technology and provides low on-resistance (RDS(ON)), enabling it to operate in low-energy and high-efficiency applications. SIHFR9220T-VB has a wide range of application potentials in automotive electronics, industrial power supplies, and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
SIHFR9220T-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: -200V
The maximum drain-source voltage is -200V, which means that the MOSFET can withstand a maximum reverse voltage of 200V, which makes it very suitable for higher voltage applications such as motor drives, high-voltage battery management systems, etc.
- **VGS (maximum gate-source voltage)**: ±20V
This parameter determines the maximum applicable voltage between the gate and source. SIHFR9220T-VB supports a gate voltage range of ±20V, provides flexible control signal input, and is suitable for operation under various control voltage conditions.
- **Vth (threshold voltage)**: -2.5V
The threshold voltage is the minimum gate-source voltage at which the MOSFET transitions from the off state to the on state. In the SIHFR9220T-VB, the -2.5V threshold voltage means that it can start operating under a lower voltage gate control, thereby improving switching speed and control accuracy.
- **RDS(ON) (on-resistance)**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
Low on-resistance means that the MOSFET generates lower power losses when it is turned on, which can improve the overall efficiency of the system. Although the on-resistance of the SIHFR9220T-VB is relatively high (related to the high voltage characteristics), it can still ensure low energy losses.
- **ID (maximum drain current)**: -3.6A
The maximum drain current is -3.6A, which is suitable for medium power applications and can withstand large current loads. It is suitable for battery management, power conversion and high voltage power management.
- **VDS (maximum drain-source voltage)**: -200V
The maximum drain-source voltage is -200V, which means that the MOSFET can withstand a maximum reverse voltage of 200V, which makes it very suitable for higher voltage applications such as motor drives, high-voltage battery management systems, etc.
- **VGS (maximum gate-source voltage)**: ±20V
This parameter determines the maximum applicable voltage between the gate and source. SIHFR9220T-VB supports a gate voltage range of ±20V, provides flexible control signal input, and is suitable for operation under various control voltage conditions.
- **Vth (threshold voltage)**: -2.5V
The threshold voltage is the minimum gate-source voltage at which the MOSFET transitions from the off state to the on state. In the SIHFR9220T-VB, the -2.5V threshold voltage means that it can start operating under a lower voltage gate control, thereby improving switching speed and control accuracy.
- **RDS(ON) (on-resistance)**:
- 1392mΩ @ VGS = 4.5V
- 1160mΩ @ VGS = 10V
Low on-resistance means that the MOSFET generates lower power losses when it is turned on, which can improve the overall efficiency of the system. Although the on-resistance of the SIHFR9220T-VB is relatively high (related to the high voltage characteristics), it can still ensure low energy losses.
- **ID (maximum drain current)**: -3.6A
The maximum drain current is -3.6A, which is suitable for medium power applications and can withstand large current loads. It is suitable for battery management, power conversion and high voltage power management.
Domain and module applications：
SIHFR9220T-VB MOSFET Application Examples
1. **Automotive Electrical System**:
SIHFR9220T-VB has a maximum drain-source voltage of -200V, which is suitable for high-voltage automotive electrical systems. It can be used in the battery management system of electric vehicles (EVs) as a switching element for the battery to control the current flow during battery charging and discharging. At the same time, it is suitable for power switches and current control circuits in automotive electronic equipment.
2. **Industrial Power Management**:
Due to its high voltage carrying capacity and low on-resistance, SIHFR9220T-VB is very suitable for power conversion applications in the industrial field, such as high-voltage DC-DC converters, AC power converters, etc. In these applications, the MOSFET can effectively reduce switching losses and ensure stable and efficient operation of the system.
3. **Battery Management System**:
In the battery management system, the high VDS capability of SIHFR9220T-VB enables it to handle the high voltage changes during the battery charging and discharging process. It is particularly suitable for applications that require high voltage switching, such as battery charging control and overvoltage protection circuits. Its low RDS(ON) characteristics also help reduce heat loss and extend the service life of the system.
4. **Power Conversion and Power Systems**:
This MOSFET is also suitable for power management applications in power systems, such as UPS (Uninterruptible Power Supply) equipment, solar inverters, etc. It can efficiently switch high-power currents to ensure efficient operation of power systems. With its Trench technology, it is able to maintain low conduction losses and improve the overall efficiency of the system.
In summary, the SIHFR9220T-VB MOSFET is very suitable for high voltage and medium current applications, can provide reliable performance and low losses, and is widely used in automotive electronics, battery management, power conversion and other fields.
1. **Automotive Electrical System**:
SIHFR9220T-VB has a maximum drain-source voltage of -200V, which is suitable for high-voltage automotive electrical systems. It can be used in the battery management system of electric vehicles (EVs) as a switching element for the battery to control the current flow during battery charging and discharging. At the same time, it is suitable for power switches and current control circuits in automotive electronic equipment.
2. **Industrial Power Management**:
Due to its high voltage carrying capacity and low on-resistance, SIHFR9220T-VB is very suitable for power conversion applications in the industrial field, such as high-voltage DC-DC converters, AC power converters, etc. In these applications, the MOSFET can effectively reduce switching losses and ensure stable and efficient operation of the system.
3. **Battery Management System**:
In the battery management system, the high VDS capability of SIHFR9220T-VB enables it to handle the high voltage changes during the battery charging and discharging process. It is particularly suitable for applications that require high voltage switching, such as battery charging control and overvoltage protection circuits. Its low RDS(ON) characteristics also help reduce heat loss and extend the service life of the system.
4. **Power Conversion and Power Systems**:
This MOSFET is also suitable for power management applications in power systems, such as UPS (Uninterruptible Power Supply) equipment, solar inverters, etc. It can efficiently switch high-power currents to ensure efficient operation of power systems. With its Trench technology, it is able to maintain low conduction losses and improve the overall efficiency of the system.
In summary, the SIHFR9220T-VB MOSFET is very suitable for high voltage and medium current applications, can provide reliable performance and low losses, and is widely used in automotive electronics, battery management, power conversion and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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