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SIHFR9210-VB Product details
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SIHFR9210-VB Product Introduction
SIHFR9210-VB is a single P-channel MOSFET in TO252 package with excellent electrical performance, especially suitable for high voltage applications. Its maximum drain-source voltage (VDS) is -200V, which can provide a lower on-resistance, especially when VGS = 10V, RDS(ON) drops to 1160mΩ, ensuring high efficiency and low power loss. The threshold voltage (Vth) of this MOSFET is -2.5V, and it has a high current carrying capacity with a maximum drain current (ID) of -3.6A. Its Trench technology effectively reduces the on-resistance and provides faster switching speed, suitable for various power management, load switching, power converter and other applications.
SIHFR9210-VB is a single P-channel MOSFET in TO252 package with excellent electrical performance, especially suitable for high voltage applications. Its maximum drain-source voltage (VDS) is -200V, which can provide a lower on-resistance, especially when VGS = 10V, RDS(ON) drops to 1160mΩ, ensuring high efficiency and low power loss. The threshold voltage (Vth) of this MOSFET is -2.5V, and it has a high current carrying capacity with a maximum drain current (ID) of -3.6A. Its Trench technology effectively reduces the on-resistance and provides faster switching speed, suitable for various power management, load switching, power converter and other applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
SIHFR9210-VB Detailed parameter description
| Parameter | Value | Description|
|---------------|------------------------|----------------------------------------|
| **Package** | TO252 | Common surface mount package type|
| **Configuration** | Single P-type channel | For high-side switch or load switching applications|
| **Maximum drain-source voltage (VDS)** | -200V | Suitable for high-voltage applications, supports a maximum voltage of -200V|
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage|
| **Threshold voltage (Vth)** | -2.5V | Indicates the voltage at which the MOSFET starts to turn on|
| **On-resistance (RDS(ON))** | 1392mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V|
| **On-resistance (RDS(ON))** | 1160mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | -3.6A | Maximum drain current, load capability|
| **Technology** | Trench | Trench technology effectively reduces on-resistance and switching losses|
| Parameter | Value | Description|
|---------------|------------------------|----------------------------------------|
| **Package** | TO252 | Common surface mount package type|
| **Configuration** | Single P-type channel | For high-side switch or load switching applications|
| **Maximum drain-source voltage (VDS)** | -200V | Suitable for high-voltage applications, supports a maximum voltage of -200V|
| **Gate-source voltage (VGS)** | ±20V | Maximum range of gate voltage|
| **Threshold voltage (Vth)** | -2.5V | Indicates the voltage at which the MOSFET starts to turn on|
| **On-resistance (RDS(ON))** | 1392mΩ @ VGS = 4.5V | On-resistance at VGS = 4.5V|
| **On-resistance (RDS(ON))** | 1160mΩ @ VGS = 10V | On-resistance at VGS = 10V|
| **Maximum drain current (ID)** | -3.6A | Maximum drain current, load capability|
| **Technology** | Trench | Trench technology effectively reduces on-resistance and switching losses|
Domain and module applications：
Applications and module examples
1. **Power management system**
SIHFR9210-VB is suitable for power management modules, especially in applications where efficient load switching is required under high voltage conditions. Its low on-resistance and high current carrying capacity enable it to perform well in DC-DC converters, voltage regulators, and battery-powered systems, effectively improving power conversion efficiency and reducing heat generation.
2. **Load switch**
In load switch applications, this MOSFET provides low on-resistance and a P-channel configuration suitable for high-side switching, and is commonly used in load switches for battery protection circuits, battery chargers, power tools, and other equipment. It can maintain low conduction losses and high efficiency during switch control.
3. **Battery protection circuit**
In battery management systems, SIHFR9210-VB can be used as a high-side switch in battery protection circuits. Its high withstand voltage of -200V is suitable for protecting the battery voltage and preventing the battery from being damaged by overcharging or over-discharging, and its low on-resistance ensures efficient power management.
4. **Power converter**
In power converters, MOSFET is used as a switching element to achieve voltage conversion and regulation. Because this type of MOSFET has a low RDS(ON) and good thermal performance, it is particularly suitable as a switching component for buck or boost DC-DC converters, which can improve the overall efficiency of the system and reduce power loss.
5. **Electric vehicle (EV) power management**
The high voltage withstand capability and low on-resistance of SIHFR9210-VB make it very suitable for use in the power management system of electric vehicles. In electric vehicles, MOSFET can be used in power conversion, charging control and battery management, helping to improve system efficiency and battery life.
6. **Communication Equipment Power Management**
In communication equipment, SIHFR9210-VB can be used in power supply and regulation circuits to ensure the stability and efficiency of battery-powered systems or high-voltage power modules. Its high current handling capability and low conduction loss make it suitable for various communication equipment such as base stations and power adapters.
These applications demonstrate the wide applicability of this MOSFET in multiple fields, especially in scenarios that require high voltage, high efficiency and low power consumption.
1. **Power management system**
SIHFR9210-VB is suitable for power management modules, especially in applications where efficient load switching is required under high voltage conditions. Its low on-resistance and high current carrying capacity enable it to perform well in DC-DC converters, voltage regulators, and battery-powered systems, effectively improving power conversion efficiency and reducing heat generation.
2. **Load switch**
In load switch applications, this MOSFET provides low on-resistance and a P-channel configuration suitable for high-side switching, and is commonly used in load switches for battery protection circuits, battery chargers, power tools, and other equipment. It can maintain low conduction losses and high efficiency during switch control.
3. **Battery protection circuit**
In battery management systems, SIHFR9210-VB can be used as a high-side switch in battery protection circuits. Its high withstand voltage of -200V is suitable for protecting the battery voltage and preventing the battery from being damaged by overcharging or over-discharging, and its low on-resistance ensures efficient power management.
4. **Power converter**
In power converters, MOSFET is used as a switching element to achieve voltage conversion and regulation. Because this type of MOSFET has a low RDS(ON) and good thermal performance, it is particularly suitable as a switching component for buck or boost DC-DC converters, which can improve the overall efficiency of the system and reduce power loss.
5. **Electric vehicle (EV) power management**
The high voltage withstand capability and low on-resistance of SIHFR9210-VB make it very suitable for use in the power management system of electric vehicles. In electric vehicles, MOSFET can be used in power conversion, charging control and battery management, helping to improve system efficiency and battery life.
6. **Communication Equipment Power Management**
In communication equipment, SIHFR9210-VB can be used in power supply and regulation circuits to ensure the stability and efficiency of battery-powered systems or high-voltage power modules. Its high current handling capability and low conduction loss make it suitable for various communication equipment such as base stations and power adapters.
These applications demonstrate the wide applicability of this MOSFET in multiple fields, especially in scenarios that require high voltage, high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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