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SIHFR9210T-VB Product details
Back to previous pageProduct introduction：
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SIHFR9210T-VB is a unipolar P-channel MOSFET in TO252 package with 200V drain-source voltage (VDS), suitable for high-voltage switching power supplies, motor drives and other fields. It has a low RDS(ON) value (1160mΩ) at VGS=10V, ensuring high efficiency and low power consumption. In addition, the product uses Trench technology to improve switching speed and reliability, suitable for low to medium power applications.
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SIHFR9210T-VB is a unipolar P-channel MOSFET in TO252 package with 200V drain-source voltage (VDS), suitable for high-voltage switching power supplies, motor drives and other fields. It has a low RDS(ON) value (1160mΩ) at VGS=10V, ensuring high efficiency and low power consumption. In addition, the product uses Trench technology to improve switching speed and reliability, suitable for low to medium power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
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- **Package type**: TO252
- **Configuration**: Unipolar P-channel
- **VDS**: -200V
- **VGS**: ±20V
- **Vth (threshold voltage)**: -2.5V
- **RDS(ON)**: 1392mΩ@VGS=4.5V, 1160mΩ@VGS=10V
- **ID (maximum drain current)**: -3.6A
- **Technology**: Trench technology
The low RDS(ON) characteristics of this MOSFET mean that it can maintain low power consumption and heat generation under high current loads, suitable for systems requiring high efficiency and reliability.
3. **
- **Package type**: TO252
- **Configuration**: Unipolar P-channel
- **VDS**: -200V
- **VGS**: ±20V
- **Vth (threshold voltage)**: -2.5V
- **RDS(ON)**: 1392mΩ@VGS=4.5V, 1160mΩ@VGS=10V
- **ID (maximum drain current)**: -3.6A
- **Technology**: Trench technology
The low RDS(ON) characteristics of this MOSFET mean that it can maintain low power consumption and heat generation under high current loads, suitable for systems requiring high efficiency and reliability.
3. **
Domain and module applications：
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This type of MOSFET is suitable for a variety of applications:
- **Power Management**: Used as a power switch in switch mode power supplies (SMPS) and battery management systems to optimize efficiency.
- **Motor Drive**: Used as a low-side switch in motor control and drive systems to reduce energy consumption.
- **Automotive Electronics**: For example, in electric vehicles and automotive battery management systems, it provides efficient power conversion and control.
- **Industrial Control Systems**: Used as a load switch and regulator in automation and robotics systems to ensure stable system operation.
This type of MOSFET is suitable for a variety of applications:
- **Power Management**: Used as a power switch in switch mode power supplies (SMPS) and battery management systems to optimize efficiency.
- **Motor Drive**: Used as a low-side switch in motor control and drive systems to reduce energy consumption.
- **Automotive Electronics**: For example, in electric vehicles and automotive battery management systems, it provides efficient power conversion and control.
- **Industrial Control Systems**: Used as a load switch and regulator in automation and robotics systems to ensure stable system operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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