SIHFR9210TL-E3-VB Product details
Product introduction:
**SIHFR9210TL-E3-VB** is a unipolar P-type MOSFET in TO252 package, suitable for high-voltage switching power supplies, current control circuits and other application scenarios. It has a maximum drain-source voltage (VDS) of -200V, can withstand higher voltage loads, and has a lower on-resistance (RDS(ON)). This model is manufactured using Trench technology, has better switching performance and lower power loss, and is suitable for high-efficiency, high-speed switching designs, especially stable performance in high-voltage environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | 1160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2.5V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
| **Parameter** | **Value** |
|-------------------|--------------------------------|
| **Model** | SIHFR9210TL-E3-VB |
| **Package** | TO252 |
| **Configuration** | Unipolar P-type MOSFET |
| **Maximum drain-source voltage** | -200V |
| **Maximum gate-source voltage** | ±20V |
| **Threshold voltage (Vth)** | -2.5V |
| **On-resistance (RDS(ON))** | 1392mΩ (VGS=4.5V) |
| | 1160mΩ (VGS=10V) |
| **Maximum drain current (ID)** | -3.6A |
| **Technology** | Trench technology|
Domain and module applications:
1. **Power management system**
Because this MOSFET has a high withstand voltage (-200V) and a low on-resistance (RDS(ON)), it is very suitable for high-efficiency switching power supply design in power management systems. For example, in high-voltage battery management and DC-DC converters, SIHFR9210TL-E3-VB MOSFET can be used as a power switching element to provide high-efficiency current switching and stable voltage regulation.
2. **Electric Vehicles (EV)**
In the power battery management system of electric vehicles, the high withstand voltage capability of SIHFR9210TL-E3-VB enables it to withstand high-voltage loads and control high-voltage switching during battery charging and discharging. At the same time, due to its low RDS(ON), it can reduce energy loss in battery management and improve the overall efficiency of the system.
3. **Industrial equipment**
In industrial applications, such as servo motor drives and motor control modules, MOSFETs play a key role. SIHFR9210TL-E3-VB is suitable for these occasions, providing efficient current control to ensure stable operation of the equipment at high speeds, especially in systems that require load control.
4. **Battery charger**
In battery charger modules, MOSFETs are used to switch current paths and provide efficient charging. Since SIHFR9210TL-E3-VB has low on-resistance and high withstand voltage, it can optimize power loss in efficient charging systems, especially for occasions that require fast charging and high-voltage operation.
5. **Switching power supply and voltage regulator module**
Due to its excellent switching characteristics, this MOSFET is also commonly used in switching power supplies and voltage regulator modules, which can effectively reduce power loss and improve power conversion efficiency. Its low on-resistance (RDS(ON)) and superior performance under high current conditions can effectively improve the performance of switching power supplies.
In short, SIHFR9210TL-E3-VB is suitable for multiple fields, especially in applications with high voltage, high current and high efficiency requirements.
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