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SiHFR9210-GE3-VB Product details
Back to previous pageProduct introduction：
**：
SiHFR9210-GE3-VB is a high-performance P-type MOSFET designed for high-voltage applications with low on-resistance and excellent switching characteristics. It can operate stably at drain-source voltages up to -200V and is suitable for power conversion, battery management systems, and motor drives that require high current and low conduction losses.
**
SiHFR9210-GE3-VB is a high-performance P-type MOSFET designed for high-voltage applications with low on-resistance and excellent switching characteristics. It can operate stably at drain-source voltages up to -200V and is suitable for power conversion, battery management systems, and motor drives that require high current and low conduction losses.
**
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2V | -3.6A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -200V | -2V | -3.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
**：
- **Package type**: TO252
- **Configuration**: Single channel P type
- **VDS (drain-source voltage)**: -200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -2V
- **RDS(ON)**: 2400mΩ (VGS=4.5V), 2000mΩ (VGS=10V)
- **ID (drain current)**: -3.6A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
- **Package type**: TO252
- **Configuration**: Single channel P type
- **VDS (drain-source voltage)**: -200V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -2V
- **RDS(ON)**: 2400mΩ (VGS=4.5V), 2000mΩ (VGS=10V)
- **ID (drain current)**: -3.6A
- **Technology**: Trench
- **Operating temperature range**: -55℃ to +150℃
Domain and module applications：
SiHFR9210-GE3-VB can be applied to various high-voltage power management systems, such as DC-DC converters and battery charging circuits, and is particularly suitable for power modules that require high efficiency. In addition, its low RDS(ON) characteristics make it very suitable for electric vehicles and industrial motor drive modules, helping to improve overall system efficiency and reduce heat loss. In battery management systems, as a switching element, it can effectively control the flow of current and ensure stable charging and discharging of the battery.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
