SIHFR9120-VB Product details
Product introduction:
**SIHFR9120-VB** is a **unipolar P-channel** MOSFET in **TO252 package**, designed for high-performance switching applications. This model features **Trench technology**, which provides excellent conduction performance and low on-resistance (RDS(ON)). Its operating voltage is **VDS = -100V**, and the maximum gate-source voltage is **±20V**. It is suitable for power management, load switching and other occasions that require medium-to-high voltage and low resistance conduction characteristics.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | 250mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -100V | -2V | -8.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
- **Model**: SIHFR9120-VB
- **Package**: TO252
- **Configuration**: Single P-channel
- **VDS**: -100V (maximum withstand voltage)
- **VGS**: ±20V (gate-source voltage)
- **Vth**: -2V (threshold voltage)
- **RDS(ON)**:
- 250mΩ @VGS=10V
- 280mΩ @VGS=4.5V
- **ID**: -8.8A (maximum drain current)
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
Domain and module applications:
1. **DC-DC converter**
Due to its low on-resistance and high current carrying capacity, SIHFR9120-VB is suitable for **DC-DC converter**, especially in scenarios where efficient power conversion is required, such as **high-efficiency power management system**, which can provide low power consumption and high efficiency performance in low voltage and high current environments.
2. **Battery Management System (BMS)**
In the **Battery Management System**, SIHFR9120-VB can be used to implement battery charge and discharge control, overvoltage protection and load switching. Its high withstand voltage and low RDS(ON) give it an advantage in battery protection modules, ensuring stable and precise voltage and current control.
3. **Electric Vehicles (EV)**
This MOSFET can be applied to **Battery Management Systems (BMS)** and **Power Systems** of electric vehicles, especially in inverters, battery chargers and power management modules, to provide efficient switching performance, optimize energy efficiency and extend battery life.
4. **Power Supply Unit (PSU)**
In **Power Supply Unit**, SIHFR9120-VB is often used in **load switching circuits**, which can withstand high load currents and reduce power loss through low RDS(ON), improve power efficiency, and are suitable for a variety of consumer electronic products such as TVs and power systems.
5. **High-Frequency Switching Circuits**
SIHFR9120-VB is suitable for **high-frequency switching circuits** due to its fast response characteristics. In applications that require high-frequency switching, such as **communication equipment, RF power supplies**, etc., it can effectively improve the system's operating efficiency.
Through these applications, SIHFR9120-VB can meet the needs of high-efficiency, low-loss switches in multiple fields and is widely used in power control and management systems in multiple industries such as industry, consumer electronics, electric vehicles and renewable energy.
Technical support:
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