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SiHFR9024-VB Product details
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SiHFR9024-VB MOSFET Detailed Product Profile
**Product Name**: SiHFR9024-VB
**Package Type**: TO252
**Configuration**: Unipolar P-channel
**Technology Type**: Trench Technology
**Maximum Drain-Source Voltage (VDS)**: -60V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
**Maximum Drain Current (ID)**: -30A
**Application Areas**:
SiHFR9024-VB As a high-performance, low on-resistance P-channel MOSFET, it is widely used in various power management, electric drive systems, and automotive applications that require efficient switching and high current carrying. This MOSFET using Trench technology enables it to perform well in high-performance and low-loss application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | 100mΩ | 90mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-P | -60V | -1.7V | -30A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-P |
SiHFR9024-VB MOSFET Detailed parameter description
- **VDS (maximum drain-source voltage)**: -60V
This parameter determines the maximum drain-source voltage that the MOSFET can withstand. In SiHFR9024-VB, -60V means that it is suitable for power supply voltage environments below 60V and is widely used in low-voltage and high-power applications.
- **VGS (maximum gate-source voltage)**: ±20V
This parameter specifies the maximum voltage between the gate and source. Exceeding this voltage range may damage the internal structure of the MOSFET. The ±20V gate voltage range enables the device to operate under a wider range of control signals.
- **Vth (threshold voltage)**: -1.7V
The threshold voltage is the lowest voltage at which the gate-source voltage causes the MOSFET to transition from the off state to the on state. The threshold voltage of -1.7V means that the MOSFET can be effectively turned on at a lower gate voltage, which is suitable for low-voltage drive control applications.
- **RDS(ON)（On-resistance）**:
- 100mΩ @ VGS=4.5V
- 90mΩ @ VGS=10V
The lower the on-resistance, the lower the conduction loss of the MOSFET, which can improve the overall system efficiency. At lower gate voltages (4.5V and 10V), the on-resistance performance of SiHFR9024-VB is very good, which means it can provide less energy loss and higher conversion efficiency.
- **ID（Maximum drain current）**: -30A
This parameter is the maximum drain current that the MOSFET can withstand. SiHFR9024-VB can withstand a maximum current of 30A, so it can be used as an important switching element in high-power applications where high current handling capabilities are required.
Domain and module applications：
SiHFR9024-VB MOSFET Application Examples
1. **Power Management**: SiHFR9024-VB is suitable for use in power switch modules (such as DC-DC converters) due to its low on-resistance and high current carrying capacity, where efficient current control and low loss characteristics are required. The low RDS(ON) characteristics make it very suitable for high-efficiency power management systems such as battery chargers and inverters.
2. **Automotive Electrical Systems**: In automotive electric drive systems and battery management systems, SiHFR9024-VB MOSFET can be used as a high-efficiency power switch to control the flow of current and reduce energy loss in the system. For example, in the battery management and power distribution unit of an electric vehicle (EV), SiHFR9024-VB can be used in low-voltage battery management circuits to help maintain stable and efficient operation of the system.
3. **Industrial Automation**: In the field of industrial automation, especially for motor drive and high power conversion, the high current capability and low on-resistance of SiHFR9024-VB enable it to provide stable performance in applications with large current fluctuations, ensuring efficient operation of the system.
4. **Consumer Electronics**: This MOSFET is also widely used in power management systems for consumer electronics, especially in portable devices and convenient battery charging systems, where SiHFR9024-VB provides efficient power conversion and optimized battery performance.
Through these applications, SiHFR9024-VB provides high-efficiency power conversion, low energy consumption, and system miniaturization and long-term operation in multiple industries, and is widely used in high-efficiency power conversion and switching applications.
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