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SIHFR9022-VB Product details

Product introduction:

Product Introduction: SIHFR9022-VB MOSFET

SIHFR9022-VB is a single P-channel MOSFET in TO252 package using Trench technology. Its main features include a rated drain-source voltage (VDS) of -60V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -1.7V. This model has a low on-resistance (RDS(ON)) of 100mΩ (VGS=4.5V) and 90mΩ (VGS=10V) at different gate voltages. It can withstand a maximum drain current (ID) of -30A, which is suitable for high-efficiency power management applications. This MOSFET is widely used in power switches with low voltage and high current loads.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

Detailed parameter description

- **Model**: SIHFR9022-VB
- **Package**: TO252
- **Configuration**: Single-P-Channel
- **Rated drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ (VGS=4.5V)
- 90mΩ (VGS=10V)
- **Maximum leakage current (ID)**: -30A
- **Technology**: Trench technology (low RDS(ON), high efficiency)

Domain and module applications:


Application fields and module examples

1. **Power management and DC-DC converters**: SIHFR9022-VB has a low on-resistance, which enables it to provide higher efficiency in high-frequency switching power supplies. In DC-DC converters, especially in applications requiring low loss and high reliability, such as mobile devices, server power supplies, and electric vehicle charging systems, it can be used as an efficient switching element.

2. **Battery-powered systems**: Due to its high current carrying capacity (up to 30A) and low conduction losses, this MOSFET is very suitable for battery management systems, especially in situations where high current switching is required, such as battery protection circuits (BMS) and battery chargers. It can effectively reduce power losses and improve the overall efficiency of the system.

3. **Motor drive and control module**: SIHFR9022-VB is suitable for motor drive circuits, especially in control modules in power tools, electric vehicle drives, and home appliances, and can provide reliable and efficient power switching. Low on-resistance helps improve the starting and operating efficiency of the motor and reduce heat generation.

4. **Inverter and solar system**: In solar inverter or other renewable energy systems, SIHFR9022-VB can be used as a power switching element due to its stable operating performance and low on-resistance, improving the conversion efficiency of the system and extending the life of the equipment.

5. **Automotive electronic system**: Automotive electrical systems require high voltage and high current capabilities. SIHFR9022-VB is widely used as a P-channel MOSFET in automotive battery management, on-board charging systems and electric vehicle control units, which can effectively improve energy efficiency and reduce heat loss.

Overall, the low on-resistance and high current carrying capacity of SIHFR9022-VB MOSFET make it suitable for a variety of high-efficiency power switching applications, especially in areas that require low power consumption, high reliability and long life.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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