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SIHFR9020-E3-VB Product details

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Product introduction：

1. **Product Introduction: SIHFR9020-E3-VB**

SIHFR9020-E3-VB is a high-performance P-type MOSFET in TO252 package, designed based on Trench technology. This MOSFET has a maximum withstand voltage of -60V (VDS) and can carry a maximum drain current (ID) of -30A. Its gate-source voltage (VGS) is ±20V and its threshold voltage (Vth) is -1.7V, ensuring that i 100mΩ @ VGS = 4.5V and 90mΩ @ VGS = 10V, respectively, which gives it a significant advantage in high-efficiency applications. The high withstand voltage, low on-resistance and large current carrying capacity of this MOSFET make it very suitable for high-power applications such as various power management, inverters, drive circuits and power tools.

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SIHFR9020-E3-VBTO252 package outline Click for larger image

Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-P -60V -1.7V -30A 100mΩ 90mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds18 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds6 Technology
TO252 Single-P -60V -1.7V -30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-P

**Detailed parameter description:**

- **Model**: SIHFR9020-E3-VB
- **Package type**: TO252
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS = 4.5V
- 90mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: -30A
- **Technology type**: Trench
- **Maximum power dissipation (Ptot)**: About 30W (depending on the heat dissipation conditions)
- **Switching time (tf)**: 50ns typical (suitable for high-speed switching applications)
- **Thermal resistance (RthJC)**: 45°C/W (junction to case)
- **Operating temperature range**: -55°C to +150°C

Domain and module applications：

**Application fields and modules:**

#### 1. **Power management system**
SIHFR9020-E3-VB is widely used in power management modules, especially in power conversion circuits such as DC-DC converters, power adapters, inverters and regulated power supplies. Its low on-resistance results in less power loss, which can effectively improve the efficiency of the system and is particularly suitable for power supply designs that require high current and high efficiency.

#### 2. **Power tools and home appliances**
Due to its high current carrying capacity, this MOSFET is widely used in power modules for power tools, electric toys, and home appliances (such as air conditioners, washing machines, etc.). In these applications, SIHFR9020-E3-VB can provide stable switching control to ensure the efficiency and stability of the equipment at high power output.

#### 3. **Inverter and battery management system**
This MOSFET is an ideal choice for electric vehicles, solar inverters and battery management systems. It can provide reliable performance in situations where high current and high voltage conversion are required, especially in battery charging and electric drive systems, which can effectively control the charging and discharging process of the battery, extend the battery life and improve efficiency.

#### 4. **Industrial Automation and Motor Drive**
In industrial automation and motor drive systems, SIHFR9020-E3-VB can be used for motor control, inverters and other high-power control systems. Due to its high current carrying capacity and low switching loss, it is suitable for applications requiring large current and fast response, which can effectively improve the stability and operating efficiency of the system.

#### 5. **Electric Vehicles and Energy Storage Systems**
This MOSFET is also suitable for power conversion modules in electric vehicles and energy storage systems, such as battery management systems (BMS), electric drive systems and charger modules. In these applications, SIHFR9020-E3-VB can provide precise current control to ensure safe charging and efficient discharge of batteries.

#### 6. **Power Amplifier and RF Applications**
This MOSFET is suitable for RF and audio amplifier applications that require high power amplification. Its low on-resistance and high current capability make it an ideal choice in high power amplifier circuits to improve signal amplification efficiency and reduce heat generation.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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