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SIHFR224-VB Product details
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1. **Product Introduction: SIHFR224-VB**
SIHFR224-VB is an N-type power MOSFET with high withstand voltage characteristics, using TO252 package and manufactured based on Trench technology. This MOSFET is designed for applications requiring high voltage and power control, with a maximum drain-source voltage (VDS) of 250V and a drain current (ID) of up to 4.5A. Its maximum gate-source voltage is ±20V, and the threshold voltage (Vth) is 3V, which can achieve reliable switching control at a lower gate-source voltage. Although the on-resistance (RDS(ON)) is 640mΩ (@VGS = 10V), it shows excellent stability and performance in high voltage applications. This MOSFET is suitable for power management systems, industrial drive systems, and home appliances that require higher voltage tolerance.
SIHFR224-VB is an N-type power MOSFET with high withstand voltage characteristics, using TO252 package and manufactured based on Trench technology. This MOSFET is designed for applications requiring high voltage and power control, with a maximum drain-source voltage (VDS) of 250V and a drain current (ID) of up to 4.5A. Its maximum gate-source voltage is ±20V, and the threshold voltage (Vth) is 3V, which can achieve reliable switching control at a lower gate-source voltage. Although the on-resistance (RDS(ON)) is 640mΩ (@VGS = 10V), it shows excellent stability and performance in high voltage applications. This MOSFET is suitable for power management systems, industrial drive systems, and home appliances that require higher voltage tolerance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description:**
- **Model**: SIHFR224-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology type**: Trench
- **Maximum power dissipation (Ptot)**: About 25W (depending on the actual heat dissipation conditions)
- **Switching time (tf)**: Typical value is 80ns (suitable for high-speed switching applications)
- **Thermal resistance (RthJC)**: 65°C/W (junction to case)
- **Operating temperature range**: -55°C to +150°C
- **Model**: SIHFR224-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Technology type**: Trench
- **Maximum power dissipation (Ptot)**: About 25W (depending on the actual heat dissipation conditions)
- **Switching time (tf)**: Typical value is 80ns (suitable for high-speed switching applications)
- **Thermal resistance (RthJC)**: 65°C/W (junction to case)
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
3. **Application fields and modules:**
#### 1. **Power management system**
SIHFR224-VB performs well in power management systems, especially in medium and high voltage power modules such as DC-DC converters, power adapters and regulated power supplies. Its high withstand voltage and low on-resistance enable it to maintain stable operation under large current and voltage fluctuations.
#### 2. **Industrial drive system**
This MOSFET is widely used in industrial automation and drive systems, especially in drivers, inverters, and motor control modules that require high voltage control and higher current output. SIHFR224-VB can effectively control current and reduce power loss, ensuring efficient and stable operation of the system.
#### 3. **Home appliance power control**
This MOSFET is an ideal choice in power control modules for home appliances such as air conditioners, refrigerators, washing machines, etc. Its high withstand voltage capability and good conductivity make it suitable for switching and power regulation in home appliance power management systems, especially where high voltage protection and low power consumption are required.
#### 4. **Battery Management and Power Tools**
SIHFR224-VB can be widely used in battery management systems (BMS), especially power tools, electric vehicles and battery charging systems. It can provide reliable switching performance under high voltage and high current environments, ensuring efficient operation and safe charging and discharging of battery systems.
#### 5. **Power Amplifier and RF Applications**
This MOSFET can also provide stable performance in RF power amplifiers, wireless communications and high-frequency power applications, especially for power amplifier circuits requiring high voltage and medium current. Its fast switching characteristics help improve the transmission efficiency and stability of RF signals.
#### 6. **Automotive Electronics**
The high voltage tolerance of SIHFR224-VB makes it an ideal choice in electric vehicles, hybrid vehicles and other automotive electronic systems. It can be used in electric drive systems, battery management systems, and on-board power conversion modules to help improve battery efficiency and provide better power control performance.
#### 1. **Power management system**
SIHFR224-VB performs well in power management systems, especially in medium and high voltage power modules such as DC-DC converters, power adapters and regulated power supplies. Its high withstand voltage and low on-resistance enable it to maintain stable operation under large current and voltage fluctuations.
#### 2. **Industrial drive system**
This MOSFET is widely used in industrial automation and drive systems, especially in drivers, inverters, and motor control modules that require high voltage control and higher current output. SIHFR224-VB can effectively control current and reduce power loss, ensuring efficient and stable operation of the system.
#### 3. **Home appliance power control**
This MOSFET is an ideal choice in power control modules for home appliances such as air conditioners, refrigerators, washing machines, etc. Its high withstand voltage capability and good conductivity make it suitable for switching and power regulation in home appliance power management systems, especially where high voltage protection and low power consumption are required.
#### 4. **Battery Management and Power Tools**
SIHFR224-VB can be widely used in battery management systems (BMS), especially power tools, electric vehicles and battery charging systems. It can provide reliable switching performance under high voltage and high current environments, ensuring efficient operation and safe charging and discharging of battery systems.
#### 5. **Power Amplifier and RF Applications**
This MOSFET can also provide stable performance in RF power amplifiers, wireless communications and high-frequency power applications, especially for power amplifier circuits requiring high voltage and medium current. Its fast switching characteristics help improve the transmission efficiency and stability of RF signals.
#### 6. **Automotive Electronics**
The high voltage tolerance of SIHFR224-VB makes it an ideal choice in electric vehicles, hybrid vehicles and other automotive electronic systems. It can be used in electric drive systems, battery management systems, and on-board power conversion modules to help improve battery efficiency and provide better power control performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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