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SIHFR224T-VB Product details
Back to previous pageProduct introduction：
1. **Product Introduction: **
**SIHFR224T-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high-voltage switching applications. Its maximum drain-source voltage (VDS) is 250V, the maximum gate-source voltage (VGS) is ±20V, it has a low on-resistance (RDS(ON)) of 640mΩ@VGS=10V, and a leakage current capability (ID) of 4.5A. The device uses Trench technology to optimize the switching characteristics, and is suitable for power management, power regulation and other fields, especially in systems that require efficient power conversion.
**SIHFR224T-VB** is a high-performance single N-channel MOSFET in TO252 package, designed for high-voltage switching applications. Its maximum drain-source voltage (VDS) is 250V, the maximum gate-source voltage (VGS) is ±20V, it has a low on-resistance (RDS(ON)) of 640mΩ@VGS=10V, and a leakage current capability (ID) of 4.5A. The device uses Trench technology to optimize the switching characteristics, and is suitable for power management, power regulation and other fields, especially in systems that require efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description:**
- **Package type:** TO252
- **Configuration:** Single-N-Channel
- **Maximum drain-source voltage (VDS):** 250V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 640mΩ @VGS = 10V
- **Maximum drain current (ID):** 4.5A
- **Technology:** Trench technology
- **Operating temperature range:** -55°C to +150°C
- **Power loss:** The maximum power loss value depends on the actual current load and working environment.
- **Switching characteristics:** Optimized switching performance, suitable for fast switching applications.
- **Package type:** TO252
- **Configuration:** Single-N-Channel
- **Maximum drain-source voltage (VDS):** 250V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 3V
- **On-resistance (RDS(ON)):** 640mΩ @VGS = 10V
- **Maximum drain current (ID):** 4.5A
- **Technology:** Trench technology
- **Operating temperature range:** -55°C to +150°C
- **Power loss:** The maximum power loss value depends on the actual current load and working environment.
- **Switching characteristics:** Optimized switching performance, suitable for fast switching applications.
Domain and module applications：
3. **Application fields and module examples:**
1. **Power management module:**
SIHFR224T-VB is widely used in DC-DC converters, especially in power conversion modules (such as stepper or boost converters), which can effectively reduce switching losses and provide stable current output.
2. **Battery Management System (BMS):**
The low on-resistance and high VDS of this MOSFET make it suitable for use in battery management systems, especially during battery charging and discharging, which ensures smaller power losses and improves the efficiency of the overall system.
3. **High-efficiency power conversion system:**
In high-efficiency power conversion devices such as power adapters and LED driver power supplies, SIHFR224T-VB can significantly improve the system's conversion efficiency and reduce heat generation due to its low RDS(ON) characteristics.
4. **Industrial Automation:**
In industrial control systems, especially motor drive and power conditioning modules, SIHFR224T-VB provides excellent high-voltage switching capabilities and supports stable operation under high load conditions.
5. **Automotive Electronics:**
In automotive power systems, this MOSFET is used in electric vehicle charging modules, DC-DC converters, and battery management systems to provide efficient and reliable power control.
6. **Switching Power Supply (SMPS):**
Due to its fast switching characteristics, this MOSFET is very suitable for use as the main switching component in high-frequency switching power supplies, which can reduce the conversion loss of the power supply.
Through its unique design and technical characteristics, SIHFR224T-VB provides high efficiency and reliability in multiple fields, especially for systems that require high-voltage switching and low power loss.
1. **Power management module:**
SIHFR224T-VB is widely used in DC-DC converters, especially in power conversion modules (such as stepper or boost converters), which can effectively reduce switching losses and provide stable current output.
2. **Battery Management System (BMS):**
The low on-resistance and high VDS of this MOSFET make it suitable for use in battery management systems, especially during battery charging and discharging, which ensures smaller power losses and improves the efficiency of the overall system.
3. **High-efficiency power conversion system:**
In high-efficiency power conversion devices such as power adapters and LED driver power supplies, SIHFR224T-VB can significantly improve the system's conversion efficiency and reduce heat generation due to its low RDS(ON) characteristics.
4. **Industrial Automation:**
In industrial control systems, especially motor drive and power conditioning modules, SIHFR224T-VB provides excellent high-voltage switching capabilities and supports stable operation under high load conditions.
5. **Automotive Electronics:**
In automotive power systems, this MOSFET is used in electric vehicle charging modules, DC-DC converters, and battery management systems to provide efficient and reliable power control.
6. **Switching Power Supply (SMPS):**
Due to its fast switching characteristics, this MOSFET is very suitable for use as the main switching component in high-frequency switching power supplies, which can reduce the conversion loss of the power supply.
Through its unique design and technical characteristics, SIHFR224T-VB provides high efficiency and reliability in multiple fields, especially for systems that require high-voltage switching and low power loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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