SIHFR224TL-E3-VB Product details
Product introduction:
**SIHFR224TL-E3-VB** is a unipolar N-channel MOSFET in TO252 package with excellent performance, suitable for power management, switch control and power conversion applications. The maximum drain-source voltage (VDS) of this product is 250V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) is 3V. The on-resistance (R_DS(on)) of the MOSFET is 640mΩ (at VGS = 10V), the maximum leakage current is 4.5A, and the use of Trench technology makes it exhibit lower power loss in medium voltage circuits. This MOSFET is suitable for applications with medium voltage and current requirements, providing efficient power conversion and current control.
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: SIHFR224TL-E3-VB
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (R_DS(on))**: 640mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 4.5A
- **Technology**: Trench technology
- **Typical applications**: Battery management systems, DC-DC converters, power tools, consumer electronics, LED drivers, etc.
Domain and module applications:
1. **Battery Management System (BMS)**
SIHFR224TL-E3-VB can be used as a power switching element in the battery management system (BMS), especially for power distribution and protection of medium voltage battery packs. During battery charging and discharging, MOSFET can efficiently control the flow of current to ensure the safety and stability of the system. The maximum withstand voltage of 250V and low on-resistance (640mΩ) of this MOSFET enable it to effectively reduce power loss and improve energy efficiency in battery management, especially for applications in 24V or 48V battery pack systems.
2. **DC-DC Converter**
In the DC-DC converter, SIHFR224TL-E3-VB can efficiently complete the voltage conversion task. Its maximum withstand voltage of 250V and maximum leakage current of 4.5A make it suitable for working in medium voltage ranges (such as 12V, 24V systems). The low on-resistance of MOSFET helps reduce the heat generated during the conversion process and improve the efficiency of the entire system. It is suitable for power modules, voltage regulation, and power distribution applications.
3. **Power tools**
In power tools (such as electric screwdrivers, electric drills, etc.), SIHFR224TL-E3-VB is used for motor drive and power switching applications. Due to its low on-resistance and 250V withstand voltage, it can withstand the high power load when the power tool is working. During the power conversion process of the power tool, MOSFET provides stable current control, helps reduce heat loss, and improves the working efficiency and service life of the tool.
4. **Consumer electronic devices**
The application of SIHFR224TL-E3-VB in consumer electronics products is mainly reflected in power management and battery charging circuits. It can operate in a voltage range of 250V and is suitable for use in battery management systems of devices such as smartphones, tablets, and laptops. During the battery charging process of these devices, MOSFET provides efficient current switching, reduces power loss and heating problems in the power module, thereby improving the overall performance and service life of the device.
5. **LED drive circuit**
In the LED drive circuit, SIHFR224TL-E3-VB acts as a power switch element to help control the current flow of the LED. The low on-resistance and high withstand voltage of this MOSFET enable it to work stably in current-intensive LED drive circuits. MOSFET can effectively control the brightness of the LED while reducing the power loss of the power supply, and is very suitable for LED driver modules in the fields of home appliance lighting, automotive lighting and industrial lighting.
6. **Smart power adapter**
SIHFR224TL-E3-VB is also widely used in smart power adapters, especially for medium-voltage AC/DC conversion and DC/AC conversion modules. With its maximum withstand voltage of 250V and low on-resistance, it can reduce power loss during high-efficiency power conversion and improve the energy efficiency of the equipment. Especially in mobile power supplies, battery chargers, and power adapters for consumer electronics, MOSFET can help achieve fast and stable voltage regulation and current control.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image