SIHFR220-VB Product details
Product introduction:
**SIHFR220-VB** is a high-performance **N-channel MOSFET** in **TO252 package**, designed for low-to-medium power applications in the 200V voltage range. This MOSFET uses **Trench technology** to provide lower on-resistance (RDS(ON) = 245mΩ @ VGS = 10V) and higher power efficiency. Its gate threshold voltage (Vth) is 3V, which is suitable for applications in the low-to-medium voltage range. **SIHFR220-VB** has a maximum drain current (ID) of 10A, which is suitable for switching power supplies, battery management, load switches and motor control systems that require higher current capability and low power consumption.
This MOSFET is very suitable for use in power management applications that require high efficiency and low conduction loss, especially in working environments with frequent switching, which can effectively reduce energy loss and improve overall system efficiency. It is widely used in high-efficiency power modules and industrial automation, and is an ideal choice for optimizing system performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | 245mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 245mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 10A
- **Technology**: Trench technology
Domain and module applications:
1. **DC-DC power converter**:
**SIHFR220-VB** is very suitable for **DC-DC power converter**, especially in situations where 200V voltage input and higher current output are required. The low on-resistance of MOSFET helps to improve efficiency and reduce power loss, especially for devices such as **Battery Management System (BMS)**, **Switching Power Supply (SMPS)** and **Power Adapter**. This MOSFET can support frequent switching operations to ensure efficient operation of the power conversion system.
2. **Motor drive system**:
Due to its high current handling capability and low on-resistance, **SIHFR220-VB** is also suitable for **motor drive systems**, such as for driving **power tools, electric appliances or small motors**. In these systems, MOSFET can stably control the flow of current, reduce losses during motor startup and operation, improve the efficiency of the motor and extend its service life.
3. **Load switch and battery management**:
In **load switch** and **battery management system (BMS), **SIHFR220-VB** can be used as a current control switch. It can effectively manage the charging and discharging process of the battery and optimize the energy efficiency. It is particularly suitable for **portable power supply equipment, UPS power supply, consumer electronics products, etc. Its low RDS(ON) value can reduce power loss and is particularly suitable for battery management applications with high efficiency and energy saving requirements.
4. **LED driver power supply**:
This MOSFET is also very suitable for **LED driver power supply** applications. Due to its low on-resistance, it can significantly reduce the loss in the power conversion process and help improve the overall efficiency of the system. It is particularly suitable for **LED lighting, intelligent lighting control systems** and other fields. By using this MOSFET, the LED driver power supply can provide a stable current output, reduce heat generation, and extend the service life of the LED lamp.
5. **Industrial Control and Automation**:
**SIHFR220-VB** can be applied to various industrial control and automation systems, especially in **PLC controllers, industrial computer systems** and **sensor drive power supplies**. This MOSFET is suitable for use in power management modules that require stable current and high-frequency switching, which can improve the response speed of the control system and ensure efficient and stable operation of the system. It is particularly suitable for switching power supplies or power management systems in automation equipment.
6. **Communication Equipment Power Management**:
In the power management of **communication equipment** such as **routers, wireless access points (APs), **SIHFR220-VB** can effectively control current and provide stable power supply. Its low on-resistance means higher power efficiency, which is very suitable for use in equipment that requires stable and efficient power supply. The high-frequency switching performance of this MOSFET ensures that the equipment can continue to work stably under high load conditions.
7. **Automotive electronics**:
In the **automotive electronics** field, especially in **vehicle power management systems** and **battery management systems (BMS), **SIHFR220-VB** can be used as a high-efficiency power switch. Its low power consumption and high efficiency are very suitable for the charge and discharge management of vehicle batteries, helping to improve the overall operating efficiency of vehicle electronic equipment, extend battery life, and optimize the performance of automotive electronic systems.
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