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SIHFR214TR-VB Product details
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Product Introduction - SIHFR214TR-VB
**SIHFR214TR-VB** is a **single N-Channel MOSFET**, packaged as **TO252**, suitable for medium power switching and control applications. This MOSFET uses **Trench technology**, has low **on-resistance** and **good thermal management performance**, suitable for **power management**, **battery drive system**, **power tools**, **communication power** and other fields. Its **drain-source voltage (VDS)** reaches **250V**, and can withstand **maximum drain current (ID)** of **4.5A**, which is very suitable for medium power systems that require stability and high efficiency.
Its **RDS(ON) = 640mΩ @ VGS = 10V** makes this MOSFET have excellent electrical efficiency at low voltage and medium power load, which can effectively reduce energy loss and improve the efficiency of the overall system. Due to its low on-resistance and high **maximum gate-source voltage (VGS)**, this product is suitable for high switching frequency applications such as switching power supplies, drive circuits and other industrial and consumer electronic devices.
**SIHFR214TR-VB** is a **single N-Channel MOSFET**, packaged as **TO252**, suitable for medium power switching and control applications. This MOSFET uses **Trench technology**, has low **on-resistance** and **good thermal management performance**, suitable for **power management**, **battery drive system**, **power tools**, **communication power** and other fields. Its **drain-source voltage (VDS)** reaches **250V**, and can withstand **maximum drain current (ID)** of **4.5A**, which is very suitable for medium power systems that require stability and high efficiency.
Its **RDS(ON) = 640mΩ @ VGS = 10V** makes this MOSFET have excellent electrical efficiency at low voltage and medium power load, which can effectively reduce energy loss and improve the efficiency of the overall system. Due to its low on-resistance and high **maximum gate-source voltage (VGS)**, this product is suitable for high switching frequency applications such as switching power supplies, drive circuits and other industrial and consumer electronic devices.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Maximum power dissipation (Pd)**: 25W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 15nC @ VDS = 30V, VGS = 10V
- **Reverse recovery time (trr)**: 100ns
- **Technology**: Trench
- **Maximum drain-to-source current (IDmax)**: 13A (in pulse mode)
- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 4.5A
- **Maximum power dissipation (Pd)**: 25W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 15nC @ VDS = 30V, VGS = 10V
- **Reverse recovery time (trr)**: 100ns
- **Technology**: Trench
- **Maximum drain-to-source current (IDmax)**: 13A (in pulse mode)
Domain and module applications：
Applicable fields and module examples
1. **Power Management Systems**
**SIHFR214TR-VB** can be widely used in **power management systems**, especially in **DC-DC converters**, **battery chargers** and **high-efficiency power adapters**. Due to its low on-resistance, it can effectively reduce energy loss in power conversion and improve the overall efficiency of the system. It is widely used in **power tools**, **LED driver power** and **portable power devices**.
2. **Power Tools**
In the **power tool** field, **SIHFR214TR-VB** is widely used in **power tool chargers** and **battery drive systems**, especially under **high load conditions**, it can effectively provide high-efficiency current control, reduce power loss during battery charging and discharging, and extend battery life.
3. **Consumer Electronics**
This MOSFET can be used in power modules of **consumer electronic devices**, such as **TV power supplies**, **audio system power supplies**, and **mobile power supplies**. It provides efficient power management in **low-power devices**, reduces heat generation in the system, and improves the stability and reliability of the device.
4. **Battery Management Systems (BMS)**
In **battery management systems**, **SIHFR214TR-VB**, as a key switch component in the **battery protection circuit**, can effectively control the battery charging process and prevent overcharging or over-discharging. Its low on-resistance and high current carrying capacity enable it to provide reliable protection and stability in battery management systems, and is widely used in **electric vehicles (EVs)**, **portable batteries**, and **energy storage systems**.
5. **Power Electronics**
As a **high-efficiency switching element**, this MOSFET is used in **power electronics** systems for **high-frequency switching power supplies**, **inverters**, and **power factor correction (PFC) circuits** to provide efficient power conversion. It can reduce switching losses and heat losses, so it is widely used in **solar inverters**, **UPS power supplies**, and **industrial power equipment**.
6. **Communication Power Supplies**
**SIHFR214TR-VB** is also very suitable for **communication power modules**, such as **base station power supplies** and **data center power supplies**. It can provide stable power under high-frequency switching and high-current loads, so that the stability of communication equipment can be guaranteed. Low on-resistance and high efficiency make it very suitable for use in efficient **power modules** and **telecommunication equipment**.
1. **Power Management Systems**
**SIHFR214TR-VB** can be widely used in **power management systems**, especially in **DC-DC converters**, **battery chargers** and **high-efficiency power adapters**. Due to its low on-resistance, it can effectively reduce energy loss in power conversion and improve the overall efficiency of the system. It is widely used in **power tools**, **LED driver power** and **portable power devices**.
2. **Power Tools**
In the **power tool** field, **SIHFR214TR-VB** is widely used in **power tool chargers** and **battery drive systems**, especially under **high load conditions**, it can effectively provide high-efficiency current control, reduce power loss during battery charging and discharging, and extend battery life.
3. **Consumer Electronics**
This MOSFET can be used in power modules of **consumer electronic devices**, such as **TV power supplies**, **audio system power supplies**, and **mobile power supplies**. It provides efficient power management in **low-power devices**, reduces heat generation in the system, and improves the stability and reliability of the device.
4. **Battery Management Systems (BMS)**
In **battery management systems**, **SIHFR214TR-VB**, as a key switch component in the **battery protection circuit**, can effectively control the battery charging process and prevent overcharging or over-discharging. Its low on-resistance and high current carrying capacity enable it to provide reliable protection and stability in battery management systems, and is widely used in **electric vehicles (EVs)**, **portable batteries**, and **energy storage systems**.
5. **Power Electronics**
As a **high-efficiency switching element**, this MOSFET is used in **power electronics** systems for **high-frequency switching power supplies**, **inverters**, and **power factor correction (PFC) circuits** to provide efficient power conversion. It can reduce switching losses and heat losses, so it is widely used in **solar inverters**, **UPS power supplies**, and **industrial power equipment**.
6. **Communication Power Supplies**
**SIHFR214TR-VB** is also very suitable for **communication power modules**, such as **base station power supplies** and **data center power supplies**. It can provide stable power under high-frequency switching and high-current loads, so that the stability of communication equipment can be guaranteed. Low on-resistance and high efficiency make it very suitable for use in efficient **power modules** and **telecommunication equipment**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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