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SIHFR214TL-E3-VB Product details
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1. **Product Introduction: SIHFR214TL-E3-VB**
SIHFR214TL-E3-VB is an N-type MOSFET with high withstand voltage and large on-resistance. It adopts TO252 package, is manufactured based on Trench technology, and is designed for high voltage and high power applications. This MOSFET can withstand a maximum drain-source voltage (VDS) of 250V and can operate stably under a maximum current of 4.5A. Although the on-resistance (RDS(ON)) of the device is 640mΩ (@VGS=10V), it still shows high tolerance in high-voltage applications and is suitable for applications that require large voltage handling capabilities. Its threshold voltage (Vth) is 3V, and the gate-source voltage (VGS) can reach a maximum of ±20V, making it suitable for a variety of medium and high voltage power supplies and power control modules.
SIHFR214TL-E3-VB is an N-type MOSFET with high withstand voltage and large on-resistance. It adopts TO252 package, is manufactured based on Trench technology, and is designed for high voltage and high power applications. This MOSFET can withstand a maximum drain-source voltage (VDS) of 250V and can operate stably under a maximum current of 4.5A. Although the on-resistance (RDS(ON)) of the device is 640mΩ (@VGS=10V), it still shows high tolerance in high-voltage applications and is suitable for applications that require large voltage handling capabilities. Its threshold voltage (Vth) is 3V, and the gate-source voltage (VGS) can reach a maximum of ±20V, making it suitable for a variety of medium and high voltage power supplies and power control modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | 640mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 250V | 3V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. **Detailed parameter description:**
- **Model**: SIHFR214TL-E3-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 4.5A
- **Technology type**: Trench
- **Maximum power dissipation (Ptot)**: 25W (typical value, depending on thermal design)
- **Switching time (tf)**: Typical value is 80ns (suitable for fast switching applications)
- **Thermal resistance (RthJC)**: 65°C/W (junction to case)
- **Operating temperature range**: -55°C to +150°C
- **Model**: SIHFR214TL-E3-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 640mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 4.5A
- **Technology type**: Trench
- **Maximum power dissipation (Ptot)**: 25W (typical value, depending on thermal design)
- **Switching time (tf)**: Typical value is 80ns (suitable for fast switching applications)
- **Thermal resistance (RthJC)**: 65°C/W (junction to case)
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
3. **Application fields and modules:**
#### 1. **Power management system**
SIHFR214TL-E3-VB can be widely used in medium and high voltage power converters, especially in application scenarios that require additional voltage resistance and higher current control. For example, in modules such as DC-DC converters, AC-DC power adapters, and voltage-regulated power supplies, this MOSFET can effectively reduce switching losses and optimize power conversion efficiency.
#### 2. **Power tools and battery-powered devices**
This MOSFET has also been used in power tools, electric toys, and battery-powered portable devices, especially in those environments that require higher voltages. Since its maximum voltage resistance reaches 250V, it can provide stable switching performance in high-power battery-powered drive systems.
#### 3. **Home appliance applications**
SIHFR214TL-E3-VB is suitable for power modules of various home appliances, especially high-power home appliances such as air conditioners, washing machines, and refrigerators. In the power regulator or control circuit of these products, this MOSFET can provide reliable performance, especially in the process of power conversion and regulation.
#### 4. **Automotive Electronics**
In automotive electronic systems, this MOSFET can be used for on-board power management, DC-DC conversion, inverters and electric drive systems. Its high withstand voltage and high current carrying capacity make it particularly important in the battery management and electric drive systems of automobiles, especially in the case of high voltage.
#### 5. **Industrial Automation and Inverters**
The application of this MOSFET also includes drivers and inverter modules in industrial automation systems. Due to its high withstand voltage and relatively high RDS(ON), it can provide efficient power conversion and control in situations where large power handling is required, such as industrial motor control, inverters, and power systems, and is particularly suitable for high power density applications.
#### 6. **Power amplifier and wireless communication**
SIHFR214TL-E3-VB is also suitable for some power amplifier applications that require high voltage tolerance, such as RF power amplifiers and high-frequency drive circuits. This MOSFET provides lower on-resistance, which can improve power efficiency and system stability during signal amplification.
#### 1. **Power management system**
SIHFR214TL-E3-VB can be widely used in medium and high voltage power converters, especially in application scenarios that require additional voltage resistance and higher current control. For example, in modules such as DC-DC converters, AC-DC power adapters, and voltage-regulated power supplies, this MOSFET can effectively reduce switching losses and optimize power conversion efficiency.
#### 2. **Power tools and battery-powered devices**
This MOSFET has also been used in power tools, electric toys, and battery-powered portable devices, especially in those environments that require higher voltages. Since its maximum voltage resistance reaches 250V, it can provide stable switching performance in high-power battery-powered drive systems.
#### 3. **Home appliance applications**
SIHFR214TL-E3-VB is suitable for power modules of various home appliances, especially high-power home appliances such as air conditioners, washing machines, and refrigerators. In the power regulator or control circuit of these products, this MOSFET can provide reliable performance, especially in the process of power conversion and regulation.
#### 4. **Automotive Electronics**
In automotive electronic systems, this MOSFET can be used for on-board power management, DC-DC conversion, inverters and electric drive systems. Its high withstand voltage and high current carrying capacity make it particularly important in the battery management and electric drive systems of automobiles, especially in the case of high voltage.
#### 5. **Industrial Automation and Inverters**
The application of this MOSFET also includes drivers and inverter modules in industrial automation systems. Due to its high withstand voltage and relatively high RDS(ON), it can provide efficient power conversion and control in situations where large power handling is required, such as industrial motor control, inverters, and power systems, and is particularly suitable for high power density applications.
#### 6. **Power amplifier and wireless communication**
SIHFR214TL-E3-VB is also suitable for some power amplifier applications that require high voltage tolerance, such as RF power amplifiers and high-frequency drive circuits. This MOSFET provides lower on-resistance, which can improve power efficiency and system stability during signal amplification.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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