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SIHFR210-VB Product details
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Product Introduction:
**SIHFR210-VB** is a unipolar N-Channel MOSFET in TO252 package. It has a wide range of applications, especially for medium voltage and power requirements. The device operates at a drain-source voltage (VDS) of 200V and a drain current (ID) of 5A, and has a low on-resistance (RDS(ON)) of 850mΩ@VGS=10V, which is suitable for high-efficiency power management and switching applications. Its Vth is 3V, indicating that it can be started at a lower gate voltage, suitable for a variety of low-power applications. The use of Trench technology ensures low conduction losses and high efficiency, which is very suitable for systems such as high-efficiency power conversion, load switching and battery management.
**SIHFR210-VB** is a unipolar N-Channel MOSFET in TO252 package. It has a wide range of applications, especially for medium voltage and power requirements. The device operates at a drain-source voltage (VDS) of 200V and a drain current (ID) of 5A, and has a low on-resistance (RDS(ON)) of 850mΩ@VGS=10V, which is suitable for high-efficiency power management and switching applications. Its Vth is 3V, indicating that it can be started at a lower gate voltage, suitable for a variety of low-power applications. The use of Trench technology ensures low conduction losses and high efficiency, which is very suitable for systems such as high-efficiency power conversion, load switching and battery management.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
| Parameter | Description |
|-------------------|-------------------------------------|
| **Model** | SIHFR210-VB |
| **Package** | TO252 |
| **Configuration** | Unipolar N-Channel MOSFET |
| **VDS (drain-source voltage)** | 200V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (threshold voltage)** | 3V |
| **RDS(ON) (on-resistance)** | 850mΩ@VGS=10V |
| **ID (drain current)** | 5A |
| **Technology** | Trench technology|
| **Application areas** | Power management, battery management, switching power supply and other systems|
| Parameter | Description |
|-------------------|-------------------------------------|
| **Model** | SIHFR210-VB |
| **Package** | TO252 |
| **Configuration** | Unipolar N-Channel MOSFET |
| **VDS (drain-source voltage)** | 200V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (threshold voltage)** | 3V |
| **RDS(ON) (on-resistance)** | 850mΩ@VGS=10V |
| **ID (drain current)** | 5A |
| **Technology** | Trench technology|
| **Application areas** | Power management, battery management, switching power supply and other systems|
Domain and module applications：
Applicable fields and module examples:
1. **Power management system**:
SIHFR210-VB can be used in efficient DC-DC converters, especially for switching elements in power conversion modules. In power management systems, this MOSFET can be used as a switching element to control the flow of current and help improve the efficiency of the overall system. Its 200V drain-source voltage and 5A maximum current make it suitable for medium-power power applications.
2. **Battery management system**:
In battery management systems (BMS), SIHFR210-VB can be used as a load switch or a switching element in a protection circuit. Its low threshold voltage (Vth 3V) enables it to operate under low voltage conditions, which is suitable for scenarios with a lower battery voltage range, such as 3.7V lithium battery systems, to ensure battery safety and efficient operation.
3. **Load Switch**:
SIHFR210-VB's 850mΩ on-resistance is suitable for use in load control modules that require efficient switching, such as battery switching or power start-stop control for portable devices. In these applications, MOSFETs need to withstand high load currents during switching, and SIHFR210-VB can provide low-loss switching characteristics, extend battery life, and improve the overall energy efficiency of the system.
4. **Automotive Electronics**:
Due to its high withstand voltage (200V) and strong temperature resistance, SIHFR210-VB is also suitable for power switches and protection circuits in automotive electronics. Especially in battery management, powertrain control, and charging systems of electric and hybrid vehicles, it can work stably under high voltage environments.
Through its high efficiency, low on-resistance, and wide operating voltage range, SIHFR210-VB can be applied to a variety of electronic systems that require high efficiency and stability, especially for medium-power, low-voltage startup applications.
1. **Power management system**:
SIHFR210-VB can be used in efficient DC-DC converters, especially for switching elements in power conversion modules. In power management systems, this MOSFET can be used as a switching element to control the flow of current and help improve the efficiency of the overall system. Its 200V drain-source voltage and 5A maximum current make it suitable for medium-power power applications.
2. **Battery management system**:
In battery management systems (BMS), SIHFR210-VB can be used as a load switch or a switching element in a protection circuit. Its low threshold voltage (Vth 3V) enables it to operate under low voltage conditions, which is suitable for scenarios with a lower battery voltage range, such as 3.7V lithium battery systems, to ensure battery safety and efficient operation.
3. **Load Switch**:
SIHFR210-VB's 850mΩ on-resistance is suitable for use in load control modules that require efficient switching, such as battery switching or power start-stop control for portable devices. In these applications, MOSFETs need to withstand high load currents during switching, and SIHFR210-VB can provide low-loss switching characteristics, extend battery life, and improve the overall energy efficiency of the system.
4. **Automotive Electronics**:
Due to its high withstand voltage (200V) and strong temperature resistance, SIHFR210-VB is also suitable for power switches and protection circuits in automotive electronics. Especially in battery management, powertrain control, and charging systems of electric and hybrid vehicles, it can work stably under high voltage environments.
Through its high efficiency, low on-resistance, and wide operating voltage range, SIHFR210-VB can be applied to a variety of electronic systems that require high efficiency and stability, especially for medium-power, low-voltage startup applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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