SIHFR210TL-E3-VB Product details
Product introduction:
**SIHFR210TL-E3-VB** is a high-efficiency **N-channel MOSFET**, packaged in **TO252**, designed for medium voltage (200V) applications. This MOSFET uses **Trench technology** and has a low on-resistance (RDS(ON) = 850mΩ @ VGS=10V), which is suitable for higher frequency switching operations. Its gate threshold voltage (Vth) is 3V, with lower operating voltage requirements. The maximum drain current (ID) of SIHFR210TL-E3-VB is 5A, which is suitable for medium current applications, especially in power management, motor drive and switching power supply systems that require low power consumption and high efficiency.
The low RDS(ON) characteristics of this MOSFET mean lower conduction losses, which helps improve the overall efficiency of the system, and is especially suitable for electronic systems with high requirements for power efficiency and thermal management. Due to its high performance and stability, SIHFR210TL-E3-VB is widely used in various consumer electronics, communication equipment, battery management systems and industrial control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | 850mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 200V | 3V | 5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 850mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 5A
- **Technology**: Trench technology
Domain and module applications:
1. **DC-DC power converter**:
**SIHFR210TL-E3-VB** has excellent switching characteristics and low on-resistance, and is suitable for **DC-DC power converter**. It can provide high efficiency in low to medium voltage ranges (such as 12V, 24V), and is widely used in **battery chargers, switching power supplies (SMPS)**, **power adapters** and other applications. This MOSFET performs well under high-frequency switching, can effectively reduce energy loss and improve system efficiency, and is especially suitable for power management applications that require frequent switching and high efficiency.
2. **Motor drive system**:
Due to its good switching characteristics and high efficiency, **SIHFR210TL-E3-VB** can be used in **motor drive systems**. Especially in small motor applications, MOSFET can effectively control the current flow and provide a stable output current. It is suitable for fields such as **power tools, household appliance motor drives**, **fan drive control**, etc., which can improve the driving efficiency of the motor and extend the service life of the equipment.
3. **Power Management and Load Switching**:
In low to medium power **load switching** applications, **SIHFR210TL-E3-VB** can be used as an efficient power switch. Whether in **battery management system (BMS)** or **power switching circuit**, this MOSFET can provide stable current control. Its low on-resistance makes the power loss low during the switching process, which is particularly suitable for use in circuits with frequent switching, such as **intelligent power management** systems, **automotive electronics** and **efficient battery chargers**.
4. **LED Driver Power**:
**SIHFR210TL-E3-VB** MOSFET is suitable for various **LED driver power** systems. In LED lighting applications, the power system is required to have efficient current control and stable output. The low RDS(ON) characteristics of MOSFET help reduce heat loss and improve the efficiency of the system, which is particularly suitable for **LED lamp power supply, intelligent lighting control** and other fields. It helps to improve the driving efficiency of LEDs and extend their service life.
5. **Communication equipment power management**:
In **communication equipment**, such as **routers, wireless access points (APs),** power management is a key link. **SIHFR210TL-E3-VB** can effectively manage current in these devices, provide stable power output, and ensure stable operation of the equipment under high load. The high efficiency and low power consumption characteristics of this MOSFET are ideal for these high-density power management modules.
6. **Industrial control and automation**:
**SIHFR210TL-E3-VB** is also suitable for **industrial control and automation systems**, such as PLC control modules, sensor power supplies, industrial computer systems, etc. In these systems, high requirements are placed on stability, switching frequency, and efficiency. MOSFET provides efficient power conversion and stable current management to ensure high-efficiency operation of industrial equipment in various working environments.
7. **Automotive electronics**:
In the **automotive electronics** field, especially in **on-board power systems** and **battery management systems (BMS), **SIHFR210TL-E3-VB** can also play an excellent role. Its low on-resistance and high efficiency make it very suitable for use in the charge and discharge management system of electric vehicle batteries, which can improve the efficiency of the on-board power system, reduce power consumption, and improve the reliability of automotive electronic systems.
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