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SIHFR120TR-VB Product details
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SIHFR120TR-VB MOSFET Product Introduction
SIHFR120TR-VB is a unipolar N-channel MOSFET in TO252 package, designed with advanced Trench technology, with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A. The device has a low on-resistance (RDS(ON)=114mΩ@VGS=10V), suitable for efficient power conversion and switching power supply systems. The Vth (threshold voltage) is 1.8V, which gives it excellent switching characteristics under low voltage drive, suitable for a wide range of power management applications.
SIHFR120TR-VB is a unipolar N-channel MOSFET in TO252 package, designed with advanced Trench technology, with a drain-source voltage (VDS) of 100V and a maximum drain current (ID) of 15A. The device has a low on-resistance (RDS(ON)=114mΩ@VGS=10V), suitable for efficient power conversion and switching power supply systems. The Vth (threshold voltage) is 1.8V, which gives it excellent switching characteristics under low voltage drive, suitable for a wide range of power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description of SIHFR120TR-VB MOSFET
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (depending on the operating environment)
- **Drain current (ID)**: Suitable for efficient power conversion and load switching
- **Drive voltage (VGS)**: The acceptable gate-source voltage is ±20V, ensuring stable operation of the device under various voltage environments.
- **Package**: TO252
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 114mΩ (at VGS=10V)
- **Maximum leakage current (ID)**: 15A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C (depending on the operating environment)
- **Drain current (ID)**: Suitable for efficient power conversion and load switching
- **Drive voltage (VGS)**: The acceptable gate-source voltage is ±20V, ensuring stable operation of the device under various voltage environments.
Domain and module applications：
SIHFR120TR-VB Applications and Module Examples
1. **Switching Power Supply (SMPS)**:
In switching power supply applications, SIHFR120TR-VB is very suitable for DC-DC converters, inverters and other modules due to its low RDS(ON) and efficient switching characteristics. Due to the low threshold voltage (1.8V), this MOSFET can use a lower gate drive voltage for efficient switching, thereby improving the overall conversion efficiency.
2. **Power Tools and Battery Management Systems (BMS)**:
This MOSFET is also very suitable for switching circuits in power tools and battery management systems. By using low on-resistance, SIHFR120TR-VB can effectively reduce power loss under high current loads, extend battery life and improve system reliability.
3. **Electric Vehicle (EV) Charging System**:
In the charging system of electric vehicles, the low on-resistance and high withstand voltage capability of MOSFET make it an ideal choice. SIHFR120TR-VB can be used as a switching element in charging modules for efficient power transmission and battery management. Through efficient switching control, charging efficiency can be significantly improved and energy loss can be reduced.
4. **Solar Inverter**:
In solar inverters, SIHFR120TR-VB can be used as a key switching element in the power conversion module. With Trench technology, this MOSFET has high switching speed and voltage resistance, which is very suitable for efficiently handling power conversion in solar systems, reducing heat loss and improving system performance.
5. **Power Management in Consumer Electronics**:
Due to its low gate drive voltage requirement, SIHFR120TR-VB is also suitable for power management systems in consumer electronics such as laptops, power adapters, smartphones, etc. In these applications, MOSFETs can provide efficient power conversion, extend battery life and improve energy efficiency.
Through the above applications, it can be seen that SIHFR120TR-VB has broad application prospects in the fields of power switching, energy management and efficient power conversion.
1. **Switching Power Supply (SMPS)**:
In switching power supply applications, SIHFR120TR-VB is very suitable for DC-DC converters, inverters and other modules due to its low RDS(ON) and efficient switching characteristics. Due to the low threshold voltage (1.8V), this MOSFET can use a lower gate drive voltage for efficient switching, thereby improving the overall conversion efficiency.
2. **Power Tools and Battery Management Systems (BMS)**:
This MOSFET is also very suitable for switching circuits in power tools and battery management systems. By using low on-resistance, SIHFR120TR-VB can effectively reduce power loss under high current loads, extend battery life and improve system reliability.
3. **Electric Vehicle (EV) Charging System**:
In the charging system of electric vehicles, the low on-resistance and high withstand voltage capability of MOSFET make it an ideal choice. SIHFR120TR-VB can be used as a switching element in charging modules for efficient power transmission and battery management. Through efficient switching control, charging efficiency can be significantly improved and energy loss can be reduced.
4. **Solar Inverter**:
In solar inverters, SIHFR120TR-VB can be used as a key switching element in the power conversion module. With Trench technology, this MOSFET has high switching speed and voltage resistance, which is very suitable for efficiently handling power conversion in solar systems, reducing heat loss and improving system performance.
5. **Power Management in Consumer Electronics**:
Due to its low gate drive voltage requirement, SIHFR120TR-VB is also suitable for power management systems in consumer electronics such as laptops, power adapters, smartphones, etc. In these applications, MOSFETs can provide efficient power conversion, extend battery life and improve energy efficiency.
Through the above applications, it can be seen that SIHFR120TR-VB has broad application prospects in the fields of power switching, energy management and efficient power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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