SIHFR110TR-E3-VB Product details
Product introduction:
**SIHFR110TR-E3-VB** is a high-efficiency **single N-Channel MOSFET** in a **TO252 package**, designed for medium and low voltage power control and switching applications. The maximum **drain-source voltage (VDS)** of this MOSFET is **100V**, with a **low on-resistance** of **114mΩ** (at **VGS=10V**). Its maximum drain current is **15A**, which is very suitable for applications that require low loss, high efficiency and fast switching response. Using **Trench technology**, it provides lower switching losses and higher conductivity, and can maintain low heat generation under load conditions. Its **Vth is 1.8V**, which means it can be turned on at a lower gate-source voltage, making it very suitable for use in a variety of power management and switch control modules.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | 114mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 100V | 1.8V | 15A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Description** |
|------------------------|---------------------------------------------------------------|
| **Model** | SIHFR110TR-E3-VB |
| **Package type** | TO252 |
| **Configuration** | Single N-Channel |
| **VDS (drain-source voltage)** | 100V |
| **VGS (gate-source voltage)** | ±20V |
| **Vth (throw-on voltage)** | 1.8V |
| **RDS(ON) (on-resistance)** | 114mΩ@VGS=10V |
| **ID (drain current)** | 15A |
| **Maximum power consumption** | 1.5W |
| **Operating temperature range** | -55°C to 150°C |
| **Thermal resistance (package)** | 60°C/W |
| **Qg (gate charge)** | 10nC |
| **Technology** | Trench |
Domain and module applications:
#### 1) **DC-DC Converters**
**SIHFR110TR-E3-VB** has low on-resistance and high current carrying capacity, making it ideal for **DC-DC converters**, especially in low- to medium-voltage power conversion. It can provide low-loss power conversion in **Switch Mode Power Supplies** (SMPS), and is particularly suitable for **Battery-Powered Devices, Consumer Electronics** and **Portable Devices** Power Management Systems**. In **12V power conversion**, such as **Automotive Power Supplies, Communication Power Supplies, LED Driver Power Supplies**, it can improve system efficiency and reduce heat loss.
#### 2) **Power Management Systems**
This MOSFET is particularly prominent in **Power Management** Systems, especially as a key component in **Switch Mode Power Supplies (SPS)** and **Battery Chargers**. In **load control, smart battery management, portable power modules** and other devices, it can provide stable voltage and current for the device, reduce power consumption and improve charging efficiency. **SIHFR110TR-E3-VB** can also be used as an efficient switching element in **renewable energy (such as solar inverter)** systems to improve energy conversion efficiency.
#### 3) **Power Tools & Home Appliances**
This MOSFET is also suitable for power management and control circuits in **power tools** and **home appliances**. For example, in **power tools, electric shavers, vacuum cleaners**, etc., it can provide higher efficiency and lower heat during switching operations. In **smart home devices** and **home appliances**, **SIHFR110TR-E3-VB** can help improve energy efficiency and ensure stable operation of the device under high load and frequent switching.
#### 4) **Automotive Electronics**
In **automotive electronics** applications, this MOSFET can be used as a switching element in **on-board power management, load switching**, **power seat control**, **power window control** and other modules to meet **the power management needs of **high-load** vehicles. Its **low RDS(ON)** characteristics perform well in **on-board battery chargers, power tools, LED lighting and power seat control** systems, which can optimize system efficiency and reduce system power consumption.
#### 5) **Load Switches & Power Regulation**
Due to its **low on-resistance** and **higher switching frequency**, **SIHFR110TR-E3-VB** is an ideal **load switch** and **power regulator**. In **load power switches, power management ICs, overvoltage protection** and other applications, it can efficiently control current, prevent overheating and overcurrent, and improve equipment reliability. This MOSFET is widely used in **smart phones, tablets, portable electronics** and **consumer electronics**.
#### 6) **Communication Equipment**
In **communication equipment**, **SIHFR110TR-E3-VB** is widely used in **power amplifiers, base station power management modules** and **power supply filters** and other components. Due to its low on-resistance and fast switching response, it can provide efficient energy management in **high-speed signal transmission and frequency conversion**. Its low power consumption characteristics can reduce signal interference and improve the overall stability and reliability of the communication system.
### Summary:
**SIHFR110TR-E3-VB** is a high-performance **N-Channel MOSFET** with **100V** drain-source voltage, **15A** maximum drain current and low **RDS(ON)**, which is very suitable for **DC-DC converters, power management systems, load switches, home appliances and power tools** and other fields. Its high efficiency, low loss and fast response characteristics make it an ideal switching element in various power conversion and management systems, and it is widely used in **consumer electronics, automotive electronics, smart homes and communication equipment**.
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