SIHFR024TR-GE3-VB Product details
Product introduction:
**SIHFR024TR-GE3-VB** is a **single N-channel MOSFET** in **TO252 package**, with **60V withstand voltage** and **18A maximum drain current**. This MOSFET adopts **Trench technology**, which optimizes the on-resistance (R_DS(on)) and switching performance, and is particularly suitable for low-voltage, high-current applications. Its **R_DS(on)** is **73mΩ (at V_GS = 10V)**, which can provide lower on-resistance at lower gate voltages, improving system efficiency and heat dissipation performance.
This MOSFET is suitable for applications in **battery management, power management, low-power electric drive systems**, and **DC-DC converters**, and can provide low-loss, efficient current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Model**: SIHFR024TR-GE3-VB
- **Package type**: TO252
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 60V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(on))**:
- **@ V_GS = 4.5V**: 85mΩ
- **@ V_GS = 10V**: 73mΩ
- **Maximum leakage current (I_D)**: 18A
- **Maximum power dissipation (P_D)**: 30W
- **Maximum junction temperature (T_jmax)**: 150°C
- **Thermal resistance (R_thJC)**: 3.7°C/W (junction to case)
- **Technology**: Trench
- **Switching speed**: Fast
- **Maximum junction temperature (T_jmax)**: 150°C
Domain and module applications:
**1. Battery Management System (BMS) **
- **Application scenario**: SiHFR024TR-GE3-VB is widely used in **Battery Management System (BMS)**, especially in the battery packs of **power tools, electric bicycles and electric vehicles**. Its low on-resistance and high current carrying capacity enable it to efficiently control the battery charging and discharging process, optimize battery performance and extend service life.
- **Example**: In the **Electric bicycle battery management system**, SiHFR024TR-GE3-VB can be used for switching control of battery charging and discharging, providing stable current conduction, and reducing heat generation to ensure efficient and safe operation of the battery system.
**2. Power management and DC-DC converters **
- **Application scenario**: This MOSFET can be used in **DC-DC converters** and **power management systems**. Through optimized on-resistance and high current handling capability, high-efficiency conversion can be achieved in small power modules, which is suitable for occasions requiring low voltage control and high current transmission.
- **Example**: In **Portable device power module**, SiHFR024TR-GE3-VB can be used to provide regulated output, support efficient conversion of voltage and current, and ensure stable operation of the device under various working conditions.
**3. Power tool drive system**
- **Application scenario**: SiHFR024TR-GE3-VB has important applications in **Power tool drive system**, providing efficient current conduction capability. It is especially suitable for power tools that require continuous high current drive, such as electric drills, electric screwdrivers, etc.
- **Example**: In **Electric screwdriver drive circuit**, SiHFR024TR-GE3-VB can be used to control the power output from the battery to the motor, maintaining efficient operation of the tool and stable current transmission.
**4. Low-power electric drive system**
- **Application scenario**: SiHFR024TR-GE3-VB is very suitable for **low-power electric drive systems**, such as **robot drive, electric scooters and small power tools**. Its low on-resistance and high current capability enable it to maintain high efficiency in such systems.
- **Example**: In the **electric drive system of a small electric scooter**, SiHFR024TR-GE3-VB can be used as a power control switch for current management between the battery and the motor to ensure stable and efficient operation of the system.
**5. Overcurrent protection circuit**
- **Application scenario**: In the **overcurrent protection circuit**, SiHFR024TR-GE3-VB can be used to protect the circuit by controlling the conduction of the current to prevent the circuit from being damaged due to excessive current.
- **Example**: In the **battery charger protection circuit**, SiHFR024TR-GE3-VB is used to monitor and control the current during the charging process to prevent overcurrent from damaging the battery and circuit.
**6. Switching power supply and power conversion**
- **Application scenario**: SiHFR024TR-GE3-VB also performs well in **switching power supply** and **power conversion applications**, providing efficient power conversion, especially for small power systems that require stable output.
- **Example**: In the **power conversion module** of a **mobile phone charger**, SiHFR024TR-GE3-VB can be used as a current switching element to ensure efficient energy conversion and stable output voltage.
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