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SIHFR024-E3-VB Product details
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Product Introduction: SIHFR024-E3-VB MOSFET
**SIHFR024-E3-VB** is a high-efficiency single N-channel MOSFET in **TO252 package**, designed for low to medium voltage (60V) applications. It has good switching performance and low on-resistance (RDS(ON) = 85mΩ @ VGS=4.5V and RDS(ON) = 73mΩ @ VGS=10V), suitable for medium current (maximum 18A) working environment. **Trench technology** is used to provide excellent power efficiency and low conduction loss. Its gate threshold voltage (Vth) is 1.7V, which can start to conduct at a lower gate voltage. This MOSFET is very suitable for switching power supplies, motor drives and other power control applications that require high efficiency and low power consumption.
SIHFR024-E3-VB MOSFET performs well in electronic applications with low voltage, high frequency and high efficiency requirements. It can provide stable current control and effectively reduce system energy consumption. It is widely used in consumer electronics, automobiles, communication equipment and other fields.
**SIHFR024-E3-VB** is a high-efficiency single N-channel MOSFET in **TO252 package**, designed for low to medium voltage (60V) applications. It has good switching performance and low on-resistance (RDS(ON) = 85mΩ @ VGS=4.5V and RDS(ON) = 73mΩ @ VGS=10V), suitable for medium current (maximum 18A) working environment. **Trench technology** is used to provide excellent power efficiency and low conduction loss. Its gate threshold voltage (Vth) is 1.7V, which can start to conduct at a lower gate voltage. This MOSFET is very suitable for switching power supplies, motor drives and other power control applications that require high efficiency and low power consumption.
SIHFR024-E3-VB MOSFET performs well in electronic applications with low voltage, high frequency and high efficiency requirements. It can provide stable current control and effectively reduce system energy consumption. It is widely used in consumer electronics, automobiles, communication equipment and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
Detailed parameter description:
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench technology
- **Package**: TO252
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS=4.5V
- 73mΩ @ VGS=10V
- **Maximum leakage current (ID)**: 18A
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and modules:
1. **DC-DC power converter**:
**SIHFR024-E3-VB** has the characteristics of low on-resistance and high efficiency, which is very suitable for various **DC-DC converters**, especially in applications under medium voltage range (such as 5V, 12V). This MOSFET can effectively reduce power loss and improve conversion efficiency. It is widely used in **power adapters**, **battery chargers** and **portable power management** devices to provide efficient and stable power supply.
2. **Motor drive system**:
Due to its efficient switching characteristics, **SIHFR024-E3-VB** can be used in various motor drive systems, especially in low to medium power motor applications, such as **small household appliance motor drive**, **fan motor control**, etc. Its lower on-resistance reduces the power consumption of the system, can ensure high efficiency in the motor drive process, and improve the reliability and response speed of the system.
3. **Load Switch and Protection Circuit**:
In **load switch** and **overcurrent protection circuit**, **SIHFR024-E3-VB**'s low RDS(ON) characteristics enable it to switch current efficiently, suitable for power management modules that require high-frequency switching operations. It can provide excellent switching performance to ensure smooth load switching, suitable for **battery protection circuit**, **battery management system (BMS)** and **intelligent power switch**.
4. **Automation and Control System**:
In **automation control** and **industrial equipment**, **SIHFR024-E3-VB** excels in medium voltage control systems due to its high reliability and high efficiency. It can be used in **PLC (Programmable Logic Controller)** output modules, **robot drive control systems** and **industrial automation control circuits** to provide these systems with precise current regulation and stable working conditions.
5. **LED driver power supply**:
**SIHFR024-E3-VB** MOSFET is also very suitable for use in **LED driver power supply**. In LED lighting applications, the power converter is required to be efficient, stable, and able to cope with different load conditions. Due to its high efficiency and low power consumption, SiHFR024-E3-VB can provide stable current in the LED driver circuit, ensuring long life and good brightness of the LED.
6. **Communication equipment power management**:
In **communication equipment**, such as **routers, base station power systems** and other high-performance power management modules, **SIHFR024-E3-VB**'s high performance makes it an ideal choice. Its efficient switching characteristics and low conduction losses ensure stable operation of the system under high load conditions, which helps to achieve high efficiency and long-term operation of communication equipment.
7. **Automotive electronics**:
In the **automotive electronics** field, especially in **on-board power systems**, **SIHFR024-E3-VB** can be used for efficient power conversion and current management. Its efficient switching performance makes it very suitable for **battery management system (BMS)**, **electric seat control**, **LED lighting control** and other applications in the car, ensuring the high performance and stability of the automotive electronic system in different working environments.
1. **DC-DC power converter**:
**SIHFR024-E3-VB** has the characteristics of low on-resistance and high efficiency, which is very suitable for various **DC-DC converters**, especially in applications under medium voltage range (such as 5V, 12V). This MOSFET can effectively reduce power loss and improve conversion efficiency. It is widely used in **power adapters**, **battery chargers** and **portable power management** devices to provide efficient and stable power supply.
2. **Motor drive system**:
Due to its efficient switching characteristics, **SIHFR024-E3-VB** can be used in various motor drive systems, especially in low to medium power motor applications, such as **small household appliance motor drive**, **fan motor control**, etc. Its lower on-resistance reduces the power consumption of the system, can ensure high efficiency in the motor drive process, and improve the reliability and response speed of the system.
3. **Load Switch and Protection Circuit**:
In **load switch** and **overcurrent protection circuit**, **SIHFR024-E3-VB**'s low RDS(ON) characteristics enable it to switch current efficiently, suitable for power management modules that require high-frequency switching operations. It can provide excellent switching performance to ensure smooth load switching, suitable for **battery protection circuit**, **battery management system (BMS)** and **intelligent power switch**.
4. **Automation and Control System**:
In **automation control** and **industrial equipment**, **SIHFR024-E3-VB** excels in medium voltage control systems due to its high reliability and high efficiency. It can be used in **PLC (Programmable Logic Controller)** output modules, **robot drive control systems** and **industrial automation control circuits** to provide these systems with precise current regulation and stable working conditions.
5. **LED driver power supply**:
**SIHFR024-E3-VB** MOSFET is also very suitable for use in **LED driver power supply**. In LED lighting applications, the power converter is required to be efficient, stable, and able to cope with different load conditions. Due to its high efficiency and low power consumption, SiHFR024-E3-VB can provide stable current in the LED driver circuit, ensuring long life and good brightness of the LED.
6. **Communication equipment power management**:
In **communication equipment**, such as **routers, base station power systems** and other high-performance power management modules, **SIHFR024-E3-VB**'s high performance makes it an ideal choice. Its efficient switching characteristics and low conduction losses ensure stable operation of the system under high load conditions, which helps to achieve high efficiency and long-term operation of communication equipment.
7. **Automotive electronics**:
In the **automotive electronics** field, especially in **on-board power systems**, **SIHFR024-E3-VB** can be used for efficient power conversion and current management. Its efficient switching performance makes it very suitable for **battery management system (BMS)**, **electric seat control**, **LED lighting control** and other applications in the car, ensuring the high performance and stability of the automotive electronic system in different working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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