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SIHFR020TL-E3-VB Product details
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SIHFR020TL-E3-VB is a single N-channel MOSFET in TO252 package, designed for low voltage applications, with excellent switching performance and low on-resistance. With a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for small and medium power electronic systems. Its on-resistance is 85mΩ (V_GS=4.5V) and 73mΩ (V_GS=10V) at different gate-source voltages, making it an excellent performer in power management and switching circuits with high efficiency requirements. This product uses Trench technology, which excels in low power applications and can provide high current carrying capacity with a maximum leakage current of 18A. Due to its low on-resistance and good switching characteristics, SIHFR020TL-E3-VB is suitable for a variety of low voltage, high-efficiency electronic circuits and power conversion modules.
**SIHFR020TL-E3-VB MOSFET
SIHFR020TL-E3-VB is a single N-channel MOSFET in TO252 package, designed for low voltage applications, with excellent switching performance and low on-resistance. With a drain-source voltage (V_DS) of 60V and a gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for small and medium power electronic systems. Its on-resistance is 85mΩ (V_GS=4.5V) and 73mΩ (V_GS=10V) at different gate-source voltages, making it an excellent performer in power management and switching circuits with high efficiency requirements. This product uses Trench technology, which excels in low power applications and can provide high current carrying capacity with a maximum leakage current of 18A. Due to its low on-resistance and good switching characteristics, SIHFR020TL-E3-VB is suitable for a variety of low voltage, high-efficiency electronic circuits and power conversion modules.
**SIHFR020TL-E3-VB MOSFET
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
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- **Model**: SIHFR020TL-E3-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 85mΩ (at V_GS=4.5V)
- 73mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: 18A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Switching characteristics**: With low switching loss, suitable for high frequency switching applications
- **Application Areas**: Suitable for low power applications such as power management, power tools, LED drivers, battery management, etc.
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- **Model**: SIHFR020TL-E3-VB
- **Package**: TO252
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 85mΩ (at V_GS=4.5V)
- 73mΩ (at V_GS=10V)
- **Maximum leakage current (I_D)**: 18A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Switching characteristics**: With low switching loss, suitable for high frequency switching applications
- **Application Areas**: Suitable for low power applications such as power management, power tools, LED drivers, battery management, etc.
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Domain and module applications：
*SIHFR020TL-E3-VB MOSFET Applications and Module Examples**
1. **Low Power Management**
SIHFR020TL-E3-VB is ideal for low power power management circuits, especially in portable electronic devices and consumer appliances. For example, it can be used in low power power modules such as DC-DC converters and battery charging circuits to improve efficiency and reduce power loss and extend battery life through its low on-resistance.
2. **Power Tool Drive Circuit**
This MOSFET is suitable for use in power tools, especially in the switch control part of the drive motor. Since its maximum leakage current is 18A, it is suitable for the low power drive system of most power tools. Its low on-resistance characteristics ensure that the power tool can work efficiently under high load conditions, reduce energy loss and improve overall performance.
3. **LED Drive Circuit**
In the LED driver, SIHFR020TL-E3-VB can be used as an efficient switching element to help control the current flow of the LED. Since the MOSFET has a low on-resistance, it can ensure that the LED drive circuit works efficiently under a stable current, improve brightness and efficiency, and reduce power loss.
4. **Battery Management System (BMS)**
In the battery management system, SIHFR020TL-E3-VB can be used to control the switching circuit during battery charging and discharging. Its efficient switching characteristics and low R_DS(ON) make it particularly suitable for high-frequency switching and low-power battery management systems, helping to achieve more accurate battery monitoring and management, and ensuring battery safety and performance.
5. **Power Factor Correction (PFC) Circuit**
In some small power electronic devices, SIHFR020TL-E3-VB is suitable for power factor correction (PFC) circuits. Its excellent switching performance and high current carrying capacity help improve the power factor of the power system and improve energy conversion efficiency, especially in low-power power conversion and small consumer electronic devices.
6. **Automotive Electronics Applications**
SIHFR020TL-E3-VB is also suitable for automotive electronics, especially in low-voltage control systems. It can be used for current switching control of modules such as vehicle power management and electronic control modules (ECM) to ensure stable system operation and improve energy efficiency.
**Summary**
SIHFR020TL-E3-VB MOSFET is suitable for various low-power applications, including power management, power tool drive circuits, LED drives, battery management systems, power factor correction circuits, and automotive electronic systems, due to its low on-resistance, moderate leakage current carrying capacity, and excellent switching characteristics. It can provide efficient and stable switching control, which helps to improve the overall system efficiency and reduce energy loss.
1. **Low Power Management**
SIHFR020TL-E3-VB is ideal for low power power management circuits, especially in portable electronic devices and consumer appliances. For example, it can be used in low power power modules such as DC-DC converters and battery charging circuits to improve efficiency and reduce power loss and extend battery life through its low on-resistance.
2. **Power Tool Drive Circuit**
This MOSFET is suitable for use in power tools, especially in the switch control part of the drive motor. Since its maximum leakage current is 18A, it is suitable for the low power drive system of most power tools. Its low on-resistance characteristics ensure that the power tool can work efficiently under high load conditions, reduce energy loss and improve overall performance.
3. **LED Drive Circuit**
In the LED driver, SIHFR020TL-E3-VB can be used as an efficient switching element to help control the current flow of the LED. Since the MOSFET has a low on-resistance, it can ensure that the LED drive circuit works efficiently under a stable current, improve brightness and efficiency, and reduce power loss.
4. **Battery Management System (BMS)**
In the battery management system, SIHFR020TL-E3-VB can be used to control the switching circuit during battery charging and discharging. Its efficient switching characteristics and low R_DS(ON) make it particularly suitable for high-frequency switching and low-power battery management systems, helping to achieve more accurate battery monitoring and management, and ensuring battery safety and performance.
5. **Power Factor Correction (PFC) Circuit**
In some small power electronic devices, SIHFR020TL-E3-VB is suitable for power factor correction (PFC) circuits. Its excellent switching performance and high current carrying capacity help improve the power factor of the power system and improve energy conversion efficiency, especially in low-power power conversion and small consumer electronic devices.
6. **Automotive Electronics Applications**
SIHFR020TL-E3-VB is also suitable for automotive electronics, especially in low-voltage control systems. It can be used for current switching control of modules such as vehicle power management and electronic control modules (ECM) to ensure stable system operation and improve energy efficiency.
**Summary**
SIHFR020TL-E3-VB MOSFET is suitable for various low-power applications, including power management, power tool drive circuits, LED drives, battery management systems, power factor correction circuits, and automotive electronic systems, due to its low on-resistance, moderate leakage current carrying capacity, and excellent switching characteristics. It can provide efficient and stable switching control, which helps to improve the overall system efficiency and reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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