SIHFR014-E3-VB Product details
Product introduction:
**SIHFR014-E3-VB** is an **N-Channel MOSFET** in **TO252** package, designed for efficient current control in medium power applications. Its design focuses on low on-resistance and high current carrying capability, making it an excellent choice for **power converters**, **power management** and **drive circuits**. With **VDS = 60V** and **ID = 18A** maximum drain current, this MOSFET is able to withstand high loads under a variety of operating conditions. Its low on-resistance of **RDS(ON) = 85mΩ @ VGS = 4.5V** and **RDS(ON) = 73mΩ @ VGS = 10V** results in lower energy losses, thus improving overall efficiency.
Using **Trench technology**, this MOSFET has excellent switching performance and high efficiency, suitable for modern electronic devices that require high switching frequency and low energy consumption. Whether it is used in **power tools**, **battery management systems** or **DC-DC converters**, SIHFR014-E3-VB can provide excellent electrical performance and reduce the overall power loss of the system.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Package type (Package)**: TO252
- **Configuration (Configuration)**: Single N-Channel MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 85mΩ @ VGS = 4.5V
- 73mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Power dissipation (Pd)**: 100W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 20nC @ VDS = 30V, VGS = 10V
- **Reverse recovery time (trr)**: 100ns
- **Technology**: Trench
- **Maximum drain-source current (IDmax)**: 50A (in pulse mode)
Domain and module applications:
1. **DC-DC Converters**
**SIHFR014-E3-VB** is suitable for **DC-DC converters**, especially in power supply designs that require **high efficiency** and **low loss**. Its **low on-resistance** can reduce power loss during the conversion process and improve the efficiency of the entire power system. Its **60V** drain-source voltage and **18A** maximum drain current can meet the requirements of medium-power power conversion. It is widely used in **industrial power**, **portable device power** and other fields.
2. **Battery Management Systems (BMS)**
In **Battery Management Systems (BMS), **SIHFR014-E3-VB** can be used as a switching element to control the charging and discharging process, especially for **lithium battery** management. Its high ID value enables it to withstand large current loads, while its low on-resistance reduces the system's energy loss, thereby improving the overall efficiency of the battery system. The MOSFET also effectively manages battery charging and discharging, extending battery life and ensuring safe operation.
3. Power Tools
In power tools, SIHFR014-E3-VB improves tool performance through efficient current switching control. Due to its low RDS(ON) and high current carrying capacity, it can continuously and stably operate under high loads, providing fast startup and efficient operation. For example, electric drills, saws and other power tools need to be able to work stably when they are started at a momentary high current, and the high efficiency performance of SIHFR014-E3-VB is very suitable for this type of demand.
4. **Power Factor Correction (PFC)**
**SIHFR014-E3-VB** is also suitable for **power factor correction modules**, especially in scenarios that require **high switching frequency** and **low on-resistance**. It helps optimize the power conversion process and ensures efficient transmission of power between the grid and the load. It is widely used in **AC-DC converters** and **power adapters**, especially in **high-efficiency power supply designs**, which can reduce harmonic distortion of current and improve overall power efficiency.
5. **Automotive Electronics**
In **automotive electronic systems**, **SIHFR014-E3-VB** can be used as a switching element for **electric drive systems**, especially for **automotive battery management systems** and **inverter circuits**. With its high current carrying capacity and stable operating characteristics, this MOSFET is very suitable for high load and high frequency switching operations, which can improve the power conversion efficiency and stability of electric vehicle systems.
6. **Solar Inverters**
Solar inverters are key devices that convert the DC power generated by **solar panels** into AC power. **SIHFR014-E3-VB** can handle high current loads in solar systems and ensure **efficient energy conversion**. Its low on-resistance characteristics reduce power losses during the conversion process and can improve the overall efficiency of the inverter, ensuring maximum utilization of solar resources.
7. **Communication Power Modules**
Among **communication power modules**, **SIHFR014-E3-VB** is used for power management of various data communication equipment. Its **low on-resistance** and **high current capacity** provide excellent performance, especially in **high power amplifiers (HPA)**, **power conditioning modules (DC-DC)** and **transmission power supplies**, which can ensure stable signal transmission and reduce energy losses.
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