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SIHFR010-VB Product details
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SIHFR010-VB Product Introduction
SIHFR010-VB is a high-performance single N-Channel MOSFET in TO252 package, designed based on Trench technology. The maximum drain-source voltage of this MOSFET is 60V, the maximum drain current is 18A, and it has a low on-resistance (R_DS(ON) is 73mΩ @ V_GS = 10V), which makes it perform well in switching and power management applications. Its low on-resistance can significantly reduce power loss and improve the efficiency of the overall system. It is particularly suitable for high-efficiency power management and high-frequency switching circuits.
SIHFR010-VB MOSFET has excellent performance in multiple application scenarios and can operate stably at higher switching frequencies and lower power losses. It is suitable for a variety of electronic devices that require efficient switching and high current carrying capacity, such as battery management systems, power modules, automotive electronics, industrial control and other fields.
SIHFR010-VB is a high-performance single N-Channel MOSFET in TO252 package, designed based on Trench technology. The maximum drain-source voltage of this MOSFET is 60V, the maximum drain current is 18A, and it has a low on-resistance (R_DS(ON) is 73mΩ @ V_GS = 10V), which makes it perform well in switching and power management applications. Its low on-resistance can significantly reduce power loss and improve the efficiency of the overall system. It is particularly suitable for high-efficiency power management and high-frequency switching circuits.
SIHFR010-VB MOSFET has excellent performance in multiple application scenarios and can operate stably at higher switching frequencies and lower power losses. It is suitable for a variety of electronic devices that require efficient switching and high current carrying capacity, such as battery management systems, power modules, automotive electronics, industrial control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
SIHFR010-VB Detailed parameter description
- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 85mΩ @ V_GS = 4.5V
- 73mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 18A
- **Switching time (T_on, T_off)**: short (suitable for high-frequency switching)
- **Input capacitance (C_iss)**: about 1350pF (typical value)
- **Reverse recovery time (T_rr)**: about 15ns (typical value)
- **Maximum operating temperature (T_J)**: 150°C
- **Technology**: Trench
- **Thermal resistance (R_thJC)**: about 3°C/W (typical value)
- **Package type**: TO252
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 85mΩ @ V_GS = 4.5V
- 73mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: 18A
- **Switching time (T_on, T_off)**: short (suitable for high-frequency switching)
- **Input capacitance (C_iss)**: about 1350pF (typical value)
- **Reverse recovery time (T_rr)**: about 15ns (typical value)
- **Maximum operating temperature (T_J)**: 150°C
- **Technology**: Trench
- **Thermal resistance (R_thJC)**: about 3°C/W (typical value)
Domain and module applications：
Application fields and module examples: 1. Battery Management Systems (BMS): SIHFR010-VB MOSFET is ideal for battery management systems, especially in the battery charging and discharging process of electric vehicles (EV) and renewable energy storage systems. Its low R_DS(ON) and high current handling capability enable it to effectively manage the battery charging and discharging process, keep the system running efficiently and extend battery life. It can provide stable power control to ensure that the battery operates under safe and reliable conditions. 2. Power Converters: SIHFR010-VB MOSFET can be used as an efficient switching element in DC-DC and AC-DC power converters to help reduce power losses. The MOSFET has excellent conductivity under high-frequency operation, which can improve power conversion efficiency. It is suitable for various applications such as industrial power supplies, home appliance power supplies, and power conversion modules for personal electronic devices.
3. **Automotive Electronics**:
Due to its high current carrying capacity and low on-resistance, SIHFR010-VB is an ideal choice for electric vehicles and automotive power management systems. It can be used in battery management, powertrain control units, and other power conversion systems in electric vehicles to help improve system efficiency and reduce energy loss, ensuring the stability and reliability of automotive electronic systems.
4. **Power Management Modules**:
In high-performance power management modules, SIHFR010-VB can be used in various power regulation applications, such as low-power switching power supplies, regulated power supplies, etc. Due to its low on-resistance and high current handling capability, this MOSFET helps reduce power loss and improve overall system efficiency, and is particularly suitable for power management modules that require high efficiency and high reliability.
5. **LED Driver Power Supplies**:
SIHFR010-VB is suitable for high-efficiency LED driver power supplies, especially in high-brightness lighting and large-scale lighting systems. Due to its lower on-resistance, MOSFET can reduce power loss when driving LED modules, improve energy efficiency, and extend the service life of the system. This MOSFET is ideal for commercial and industrial lighting solutions, as well as home LED lighting equipment.
6. **Industrial Control Systems**:
SIHFR010-VB is also widely used in industrial automation and control systems. It can be used as an efficient switching element in applications such as motor control, power supply regulation, and automation control boards. Its high current carrying capacity and low power loss enable it to operate reliably under high loads and harsh working environments, ensuring the efficient operation of industrial equipment.
3. **Automotive Electronics**:
Due to its high current carrying capacity and low on-resistance, SIHFR010-VB is an ideal choice for electric vehicles and automotive power management systems. It can be used in battery management, powertrain control units, and other power conversion systems in electric vehicles to help improve system efficiency and reduce energy loss, ensuring the stability and reliability of automotive electronic systems.
4. **Power Management Modules**:
In high-performance power management modules, SIHFR010-VB can be used in various power regulation applications, such as low-power switching power supplies, regulated power supplies, etc. Due to its low on-resistance and high current handling capability, this MOSFET helps reduce power loss and improve overall system efficiency, and is particularly suitable for power management modules that require high efficiency and high reliability.
5. **LED Driver Power Supplies**:
SIHFR010-VB is suitable for high-efficiency LED driver power supplies, especially in high-brightness lighting and large-scale lighting systems. Due to its lower on-resistance, MOSFET can reduce power loss when driving LED modules, improve energy efficiency, and extend the service life of the system. This MOSFET is ideal for commercial and industrial lighting solutions, as well as home LED lighting equipment.
6. **Industrial Control Systems**:
SIHFR010-VB is also widely used in industrial automation and control systems. It can be used as an efficient switching element in applications such as motor control, power supply regulation, and automation control boards. Its high current carrying capacity and low power loss enable it to operate reliably under high loads and harsh working environments, ensuring the efficient operation of industrial equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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