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SiHFP9140-VB Product details
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SiHFP9140-VB Product Introduction
SiHFP9140-VB is a high-performance single P-Channel MOSFET in TO247 package and designed based on Trench technology. This MOSFET has a maximum drain-source voltage (V_DS) of 100V and a maximum drain current (I_D) of 21A, suitable for medium-to-high voltage and high current applications. The low on-resistance of SiHFP9140-VB (R_DS(ON) = 200mΩ@V_GS = 10V) makes it have low power loss during operation and higher efficiency, suitable for use in systems requiring low energy loss and high reliability.
This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, can effectively reduce switching losses, and provide stable and reliable performance under high load and high frequency operating conditions. SiHFP9140-VB is particularly suitable for applications with high efficiency requirements such as power conversion, power management and battery drive systems.
SiHFP9140-VB is a high-performance single P-Channel MOSFET in TO247 package and designed based on Trench technology. This MOSFET has a maximum drain-source voltage (V_DS) of 100V and a maximum drain current (I_D) of 21A, suitable for medium-to-high voltage and high current applications. The low on-resistance of SiHFP9140-VB (R_DS(ON) = 200mΩ@V_GS = 10V) makes it have low power loss during operation and higher efficiency, suitable for use in systems requiring low energy loss and high reliability.
This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, can effectively reduce switching losses, and provide stable and reliable performance under high load and high frequency operating conditions. SiHFP9140-VB is particularly suitable for applications with high efficiency requirements such as power conversion, power management and battery drive systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-P | -100V | -2V | -21A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-P |
SiHFP9140-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- 240mΩ @ V_GS = 4.5V
- 200mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -21A
- **Switching time (T_on, T_off)**: short (suitable for high-speed switching)
- **Input capacitance (C_iss)**: about 2400pF (typical value)
- **Reverse recovery time (T_rr)**: about 20ns (typical value)
- **Maximum operating temperature (T_J)**: 150°C
- **Technology**: Trench
- **Thermal resistance (R_thJC)**: about 0.5°C/W (typical value)
- **Package type**: TO247
- **Configuration**: Single P-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: -100V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -2V
- **On-resistance (R_DS(ON))**:
- 240mΩ @ V_GS = 4.5V
- 200mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -21A
- **Switching time (T_on, T_off)**: short (suitable for high-speed switching)
- **Input capacitance (C_iss)**: about 2400pF (typical value)
- **Reverse recovery time (T_rr)**: about 20ns (typical value)
- **Maximum operating temperature (T_J)**: 150°C
- **Technology**: Trench
- **Thermal resistance (R_thJC)**: about 0.5°C/W (typical value)
Domain and module applications：
Application fields and module examples: 1. Battery Management Systems (BMS): SiHFP9140-VB is very suitable for use in battery management systems, especially in battery charge and discharge control circuits for electric vehicles (EVs) and energy storage systems. In these applications, MOSFETs need to withstand higher voltages and currents, and the high current carrying capacity and low on-resistance of SiHFP9140-VB make it an ideal choice. It can effectively manage the charging and discharging process of the battery and keep the system running efficiently. 2. Power Converters & Inverters: SiHFP9140-VB is also widely used in various power converters and inverters, especially in DC-DC and DC-AC converters. These systems usually require high-efficiency switching devices to reduce losses and improve energy conversion efficiency. The low R_DS(ON) value of MOSFET helps reduce power losses and adapt to high-efficiency and high-frequency working conditions, especially in photovoltaic inverters, UPS and power electronics systems.
3. Electric Vehicles (EVs): In electric vehicles, SiHFP9140-VB is suitable for power conversion modules that drive batteries and motors. As a power switching element, it can withstand high currents and voltages to ensure efficient and stable operation of the vehicle drive system. This MOSFET has important applications in chargers, drive controllers, and battery protection circuits.
4. Power Management: SiHFP9140-VB can be used in various power management modules, especially in high-efficiency power supplies and high-power applications. It can effectively handle high currents while providing low conduction losses, making it suitable for power management in server power supplies, industrial power systems, and communication equipment. The efficient switching characteristics of MOSFET help power modules improve overall performance and reduce energy consumption.
5. LED Driver Power Supplies: SiHFP9140-VB is suitable for high-power LED driver power supplies, especially in high-efficiency lighting applications. This MOSFET can provide stable current output, reduce energy loss, help the system achieve higher energy efficiency, and extend the service life of the LED module. In urban lighting and industrial applications, SiHFP9140-VB can ensure efficient and stable operation of light sources.
6. **Automotive Power Systems**:
SiHFP9140-VB has important applications in automotive power systems, such as on-board chargers, DC-DC converters, and battery charging modules. Due to its high current carrying capacity and low power consumption, it is suitable for providing stable power for automotive electronic equipment to ensure efficient operation of the on-board system.
3. Electric Vehicles (EVs): In electric vehicles, SiHFP9140-VB is suitable for power conversion modules that drive batteries and motors. As a power switching element, it can withstand high currents and voltages to ensure efficient and stable operation of the vehicle drive system. This MOSFET has important applications in chargers, drive controllers, and battery protection circuits.
4. Power Management: SiHFP9140-VB can be used in various power management modules, especially in high-efficiency power supplies and high-power applications. It can effectively handle high currents while providing low conduction losses, making it suitable for power management in server power supplies, industrial power systems, and communication equipment. The efficient switching characteristics of MOSFET help power modules improve overall performance and reduce energy consumption.
5. LED Driver Power Supplies: SiHFP9140-VB is suitable for high-power LED driver power supplies, especially in high-efficiency lighting applications. This MOSFET can provide stable current output, reduce energy loss, help the system achieve higher energy efficiency, and extend the service life of the LED module. In urban lighting and industrial applications, SiHFP9140-VB can ensure efficient and stable operation of light sources.
6. **Automotive Power Systems**:
SiHFP9140-VB has important applications in automotive power systems, such as on-board chargers, DC-DC converters, and battery charging modules. Due to its high current carrying capacity and low power consumption, it is suitable for providing stable power for automotive electronic equipment to ensure efficient operation of the on-board system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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