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SiHFP360LC-VB Product details
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SiHFP360LC-VB Product Introduction
SiHFP360LC-VB is a high-performance single N-Channel MOSFET, using advanced SJ_Multi-EPI technology, packaged in TO247. This MOSFET has a maximum drain-source voltage (V_DS) of 500V and a maximum drain current (I_D) of 40A, suitable for high voltage and high current applications. The low on-resistance of SiHFP360LC-VB (R_DS(ON) = 80mΩ@V_GS = 10V) can effectively reduce power loss and improve system efficiency, suitable for various high-efficiency power supplies and power conversion systems.
This MOSFET is designed with Trench technology, with extremely low on-resistance and excellent switching characteristics, and can cope with high load and frequent switching application environments. In addition, SiHFP360LC-VB has high voltage tolerance and a wide operating temperature range, which is very suitable for industrial applications, automotive electronics, communication equipment and other fields that require high reliability and long-term stable operation.
SiHFP360LC-VB is a high-performance single N-Channel MOSFET, using advanced SJ_Multi-EPI technology, packaged in TO247. This MOSFET has a maximum drain-source voltage (V_DS) of 500V and a maximum drain current (I_D) of 40A, suitable for high voltage and high current applications. The low on-resistance of SiHFP360LC-VB (R_DS(ON) = 80mΩ@V_GS = 10V) can effectively reduce power loss and improve system efficiency, suitable for various high-efficiency power supplies and power conversion systems.
This MOSFET is designed with Trench technology, with extremely low on-resistance and excellent switching characteristics, and can cope with high load and frequent switching application environments. In addition, SiHFP360LC-VB has high voltage tolerance and a wide operating temperature range, which is very suitable for industrial applications, automotive electronics, communication equipment and other fields that require high reliability and long-term stable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
SiHFP360LC-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 500V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.8V
- **On-resistance (R_DS(ON))**: 80mΩ@V_GS=10V
- **Maximum drain current (I_D)**: 40A
- **Maximum power consumption (P_D)**: About 200W (depending on heat dissipation conditions)
- **Switching time (T_on, T_off)**: short, suitable for high-speed switching applications
- **Input capacitance (C_iss)**: About 4000pF (typical value)
- **Reverse recovery time (T_rr)**: about 50ns (typical value)
- **Maximum operating temperature (T_J)**: 150°C
- **Technology**: SJ_Multi-EPI
- **Thermal resistance (R_thJC)**: about 0.5°C/W (typical value)
- **Package type**: TO247
- **Configuration**: Single N-Channel MOSFET
- **Maximum drain-source voltage (V_DS)**: 500V
- **Maximum gate-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.8V
- **On-resistance (R_DS(ON))**: 80mΩ@V_GS=10V
- **Maximum drain current (I_D)**: 40A
- **Maximum power consumption (P_D)**: About 200W (depending on heat dissipation conditions)
- **Switching time (T_on, T_off)**: short, suitable for high-speed switching applications
- **Input capacitance (C_iss)**: About 4000pF (typical value)
- **Reverse recovery time (T_rr)**: about 50ns (typical value)
- **Maximum operating temperature (T_J)**: 150°C
- **Technology**: SJ_Multi-EPI
- **Thermal resistance (R_thJC)**: about 0.5°C/W (typical value)
Domain and module applications：
Application fields and module examples: 1. Power Converters & Inverters: SiHFP360LC-VB is suitable for power conversion systems, such as high-efficiency power modules such as DC-DC converters and DC-AC inverters. Its high withstand voltage and low on-resistance enable it to operate under high voltage and high current conditions, ensuring high efficiency of energy conversion. It is widely used in photovoltaic inverters, electric vehicle charging stations, and power conversion systems for grid access. 2. Industrial Power Supply Systems: As a key power switch in industrial power systems, SiHFP360LC-VB can be used in power modules for various industrial equipment, including automation control systems, factory equipment, communication power supplies, etc. Due to its stable high current handling capability and low loss characteristics, this MOSFET is an indispensable component in high-power systems.
3. **Automotive Electronics**:
In the battery management system (BMS) of electric vehicles (EV) and hybrid electric vehicles (HEV), SiHFP360LC-VB can be used for efficient battery charge and discharge control. It can withstand higher voltages and currents and maintain low conduction losses to adapt to high power requirements. This MOSFET can also be used in other modules in automotive power management systems, such as on-board chargers and electric drive systems.
4. **Battery Management and Charging Systems**:
SiHFP360LC-VB has a wide range of applications in battery management and charging systems, especially in high-power battery chargers, UPS (uninterruptible power supply) and energy storage systems. Its high efficiency characteristics can help reduce energy loss during the charging process and improve system operating efficiency and battery life.
5. **Power Modules for Communication Devices**:
SiHFP360LC-VB is suitable for power modules of communication equipment, such as base station power supply, server power supply and data center power supply system. These systems usually require efficient power conversion and stable power supply. SiHFP360LC-VB can provide stable switching performance and low energy consumption in high current and high voltage environments to ensure efficient and reliable operation of the system.
6. **High Efficiency Power Adapters**:
In the power adapters of notebook computers, monitors, TVs and other devices, SiHFP360LC-VB can be used as the main power switching device for efficient voltage conversion. Its low on-resistance reduces power loss and improves the overall efficiency of the adapter, meeting the design requirements of high-efficiency power supplies.
7. **High Power LED Driver Power Supplies**:
The SiHFP360LC-VB is suitable for use in power drivers for high-power LED lighting systems, providing stable current output and reducing energy loss. Due to its superior current carrying capacity and low heat generation, it has important value in high-power LED lighting applications, especially high-brightness, large-area lighting applications.
3. **Automotive Electronics**:
In the battery management system (BMS) of electric vehicles (EV) and hybrid electric vehicles (HEV), SiHFP360LC-VB can be used for efficient battery charge and discharge control. It can withstand higher voltages and currents and maintain low conduction losses to adapt to high power requirements. This MOSFET can also be used in other modules in automotive power management systems, such as on-board chargers and electric drive systems.
4. **Battery Management and Charging Systems**:
SiHFP360LC-VB has a wide range of applications in battery management and charging systems, especially in high-power battery chargers, UPS (uninterruptible power supply) and energy storage systems. Its high efficiency characteristics can help reduce energy loss during the charging process and improve system operating efficiency and battery life.
5. **Power Modules for Communication Devices**:
SiHFP360LC-VB is suitable for power modules of communication equipment, such as base station power supply, server power supply and data center power supply system. These systems usually require efficient power conversion and stable power supply. SiHFP360LC-VB can provide stable switching performance and low energy consumption in high current and high voltage environments to ensure efficient and reliable operation of the system.
6. **High Efficiency Power Adapters**:
In the power adapters of notebook computers, monitors, TVs and other devices, SiHFP360LC-VB can be used as the main power switching device for efficient voltage conversion. Its low on-resistance reduces power loss and improves the overall efficiency of the adapter, meeting the design requirements of high-efficiency power supplies.
7. **High Power LED Driver Power Supplies**:
The SiHFP360LC-VB is suitable for use in power drivers for high-power LED lighting systems, providing stable current output and reducing energy loss. Due to its superior current carrying capacity and low heat generation, it has important value in high-power LED lighting applications, especially high-brightness, large-area lighting applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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