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SiHFP32N50K-VB Product details
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SiHFP32N50K-VB is a unipolar N-channel MOSFET in TO247 package with a high withstand voltage of 500V, suitable for applications requiring high voltage and high current. Its low on-resistance (R_DS(ON) is 80mΩ@V_GS=10V) and high current carrying capacity (maximum 40A) enable it to perform well in power switches and power management systems. Using SJ_Multi-EPI technology, this MOSFET provides excellent performance under high voltage conditions and is particularly suitable for power conversion, inverters and industrial control. Its high voltage tolerance and low conduction loss enable it to provide stable performance in harsh working environments.
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**SiHFP32N50K-VB
SiHFP32N50K-VB is a unipolar N-channel MOSFET in TO247 package with a high withstand voltage of 500V, suitable for applications requiring high voltage and high current. Its low on-resistance (R_DS(ON) is 80mΩ@V_GS=10V) and high current carrying capacity (maximum 40A) enable it to perform well in power switches and power management systems. Using SJ_Multi-EPI technology, this MOSFET provides excellent performance under high voltage conditions and is particularly suitable for power conversion, inverters and industrial control. Its high voltage tolerance and low conduction loss enable it to provide stable performance in harsh working environments.
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**SiHFP32N50K-VB
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Model**: SiHFP32N50K-VB
- **Package type**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-to-source voltage (V_DS)**: 500V
- **Maximum gate-to-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.8V
- **On-resistance (R_DS(ON))**: 80mΩ@V_GS=10V
- **Maximum drain current (I_D)**: 40A
- **Technology**: SJ_Multi-EPI technology (provides excellent high-voltage characteristics and low conduction losses)
- **Maximum power consumption**: The specific power consumption is limited by the application environment and heat dissipation conditions
- **Operating temperature range**: Typically -55°C to 150°C, specific range depends on application requirements
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**SiHFP32N50K-VB
- **Model**: SiHFP32N50K-VB
- **Package type**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-to-source voltage (V_DS)**: 500V
- **Maximum gate-to-source voltage (V_GS)**: ±30V
- **Threshold voltage (V_th)**: 3.8V
- **On-resistance (R_DS(ON))**: 80mΩ@V_GS=10V
- **Maximum drain current (I_D)**: 40A
- **Technology**: SJ_Multi-EPI technology (provides excellent high-voltage characteristics and low conduction losses)
- **Maximum power consumption**: The specific power consumption is limited by the application environment and heat dissipation conditions
- **Operating temperature range**: Typically -55°C to 150°C, specific range depends on application requirements
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**SiHFP32N50K-VB
Domain and module applications：
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1. **High-voltage power conversion system**
SiHFP32N50K-VB is widely used in high-voltage power converters, especially in applications requiring 500V withstand voltage, such as AC-DC converters and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to efficiently convert electrical energy and is widely used in high-power power supplies, power systems and industrial power management.
2. **Solar inverter and wind power generation system**
In the field of renewable energy, SiHFP32N50K-VB is an important switching element in the inverter circuit, capable of stable operation under high voltage and high current environments. In solar inverter and wind power generation systems, it is used to convert DC power to AC power to meet complex power output requirements.
3. **Industrial motor drive**
This MOSFET also plays a key role in industrial motor drive systems, especially in high-voltage motor control modules. Through its low R_DS(ON) characteristics, SiHFP32N50K-VB can efficiently drive high-power motors, reduce switching losses and heat generation, and improve system stability and reliability.
4. **Electric Vehicle Charging Station**
In electric vehicle (EV) charging stations, SiHFP32N50K-VB is used in power conversion modules, which can withstand high input voltages and ensure conversion efficiency, providing reliable power supply. Due to its high voltage and high current handling capabilities, this MOSFET is very suitable for use in EV charging stations and other charging systems for electric vehicles.
5. **Switching Power Supply and UPS Systems**
SiHFP32N50K-VB is also suitable for uninterruptible power supply (UPS) systems and various power conversion and management modules, which can provide stable output voltage and current. Due to its low on-resistance, it can improve system efficiency and reduce energy consumption, especially in high-power, high-efficiency power supply applications.
In short, the SiHFP32N50K-VB is suitable for a variety of applications that require high voltage, high current and efficient energy conversion, especially in power systems, renewable energy, electric transportation and industrial control modules, demonstrating its excellent performance and reliability.
1. **High-voltage power conversion system**
SiHFP32N50K-VB is widely used in high-voltage power converters, especially in applications requiring 500V withstand voltage, such as AC-DC converters and DC-DC converters. Its low on-resistance and high current carrying capacity enable it to efficiently convert electrical energy and is widely used in high-power power supplies, power systems and industrial power management.
2. **Solar inverter and wind power generation system**
In the field of renewable energy, SiHFP32N50K-VB is an important switching element in the inverter circuit, capable of stable operation under high voltage and high current environments. In solar inverter and wind power generation systems, it is used to convert DC power to AC power to meet complex power output requirements.
3. **Industrial motor drive**
This MOSFET also plays a key role in industrial motor drive systems, especially in high-voltage motor control modules. Through its low R_DS(ON) characteristics, SiHFP32N50K-VB can efficiently drive high-power motors, reduce switching losses and heat generation, and improve system stability and reliability.
4. **Electric Vehicle Charging Station**
In electric vehicle (EV) charging stations, SiHFP32N50K-VB is used in power conversion modules, which can withstand high input voltages and ensure conversion efficiency, providing reliable power supply. Due to its high voltage and high current handling capabilities, this MOSFET is very suitable for use in EV charging stations and other charging systems for electric vehicles.
5. **Switching Power Supply and UPS Systems**
SiHFP32N50K-VB is also suitable for uninterruptible power supply (UPS) systems and various power conversion and management modules, which can provide stable output voltage and current. Due to its low on-resistance, it can improve system efficiency and reduce energy consumption, especially in high-power, high-efficiency power supply applications.
In short, the SiHFP32N50K-VB is suitable for a variety of applications that require high voltage, high current and efficient energy conversion, especially in power systems, renewable energy, electric transportation and industrial control modules, demonstrating its excellent performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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