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SiHFP31N50L-VB Product details
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SiHFP31N50L-VB is a unipolar N-type MOSFET in TO247 package, designed for high voltage and high current power switching applications. Its maximum drain-source voltage is 500V and the maximum drain current is 40A, which can withstand high voltage and high current working environment. This MOSFET adopts advanced SJ_Multi-EPI technology to provide low on-resistance (RDS(ON) = 80mΩ @ VGS = 10V), which helps to reduce switching loss and power loss, ensuring high efficiency power conversion. SiHFP31N50L-VB can be widely used in many fields such as high power power supplies, DC-DC converters, motor drives and battery management systems, especially for high voltage and low switching loss. High efficiency power conversion occasions.
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SiHFP31N50L-VB is a unipolar N-type MOSFET in TO247 package, designed for high voltage and high current power switching applications. Its maximum drain-source voltage is 500V and the maximum drain current is 40A, which can withstand high voltage and high current working environment. This MOSFET adopts advanced SJ_Multi-EPI technology to provide low on-resistance (RDS(ON) = 80mΩ @ VGS = 10V), which helps to reduce switching loss and power loss, ensuring high efficiency power conversion. SiHFP31N50L-VB can be widely used in many fields such as high power power supplies, DC-DC converters, motor drives and battery management systems, especially for high voltage and low switching loss. High efficiency power conversion occasions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package:** TO247
- **Configuration:** Unipolar N-type
- **Drain-Source Voltage (VDS):** 500V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.8V
- **On-Resistance (RDS(ON)):** 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID):** 40A
- **Technology:** SJ_Multi-EPI
- **Maximum Power Dissipation:** 150W (depending on operating conditions and thermal design)
- **Operating Temperature Range:** -55°C to +150°C
- **Forward Gate Current:** 100mA
- **Maximum Junction Temperature:** 150°C
- **Reverse Current:** Not suitable for reverse current, maximum drain-source voltage is 500V
**
- **Package:** TO247
- **Configuration:** Unipolar N-type
- **Drain-Source Voltage (VDS):** 500V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.8V
- **On-Resistance (RDS(ON)):** 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID):** 40A
- **Technology:** SJ_Multi-EPI
- **Maximum Power Dissipation:** 150W (depending on operating conditions and thermal design)
- **Operating Temperature Range:** -55°C to +150°C
- **Forward Gate Current:** 100mA
- **Maximum Junction Temperature:** 150°C
- **Reverse Current:** Not suitable for reverse current, maximum drain-source voltage is 500V
**
Domain and module applications：
：**
1. **Power Management System:**
SiHFP31N50L-VB MOSFET is suitable for efficient power management systems, especially in high voltage conversion and high efficiency applications. It is widely used in DC-DC converters, AC-DC power adapters, power supply modules and other devices, which can provide efficient power conversion, reduce energy loss, and improve the performance and stability of the whole system.
2. **Motor Drive:**
This MOSFET is suitable for use in motor drive systems, especially in industrial motors or home appliances that require high voltage and high current. Due to its low RDS(ON) characteristics, SiHFP31N50L-VB can effectively reduce heat generation and improve the efficiency of motor drive systems, enabling stable operation under high loads.
3. **Battery Management System:**
SiHFP31N50L-VB is an ideal choice in battery management systems, especially in electric vehicles (EVs) and other energy storage devices. Due to its low on-resistance and high withstand voltage characteristics, it can achieve more efficient charge and discharge control, ensuring the safety and stability of the battery system under various working conditions.
4. **Power inverter:**
In green energy systems such as solar inverters and wind power generation systems, SiHFP31N50L-VB can be used as a switching device for power inverters for efficient power conversion. Through its low RDS(ON) and high operating voltage, MOSFET can reduce energy loss and optimize conversion efficiency during high power conversion, meeting high requirements for power transmission and control.
5. **Automotive electronics:**
SiHFP31N50L-VB is also widely used in the field of automotive electronics, especially in power systems in electric vehicles (EV) and hybrid electric vehicles (HEV). It can be used in battery management, electric drive, charging system and power conversion module. With its high voltage resistance and high current carrying capacity, it ensures efficient and stable operation of the vehicle's power system.
6. **Industrial Power Control:**
This MOSFET can also be used in industrial power control systems, such as power transmission, distribution, regulation and control equipment. In industrial applications requiring high voltage and high current, SiHFP31N50L-VB as a switching device can provide reliable power conversion, reduce energy loss and extend the service life of equipment.
**Summary:**
SiHFP31N50L-VB is a high-voltage (500V), low-on-resistance (80mΩ) and high-current carrying capacity (40A) MOSFET, using SJ_Multi-EPI technology, suitable for power management, motor drive, battery management system, power inverter and automotive electronics and other fields. Its excellent current handling capability and efficient switching performance make it an ideal choice for various high-voltage applications.
1. **Power Management System:**
SiHFP31N50L-VB MOSFET is suitable for efficient power management systems, especially in high voltage conversion and high efficiency applications. It is widely used in DC-DC converters, AC-DC power adapters, power supply modules and other devices, which can provide efficient power conversion, reduce energy loss, and improve the performance and stability of the whole system.
2. **Motor Drive:**
This MOSFET is suitable for use in motor drive systems, especially in industrial motors or home appliances that require high voltage and high current. Due to its low RDS(ON) characteristics, SiHFP31N50L-VB can effectively reduce heat generation and improve the efficiency of motor drive systems, enabling stable operation under high loads.
3. **Battery Management System:**
SiHFP31N50L-VB is an ideal choice in battery management systems, especially in electric vehicles (EVs) and other energy storage devices. Due to its low on-resistance and high withstand voltage characteristics, it can achieve more efficient charge and discharge control, ensuring the safety and stability of the battery system under various working conditions.
4. **Power inverter:**
In green energy systems such as solar inverters and wind power generation systems, SiHFP31N50L-VB can be used as a switching device for power inverters for efficient power conversion. Through its low RDS(ON) and high operating voltage, MOSFET can reduce energy loss and optimize conversion efficiency during high power conversion, meeting high requirements for power transmission and control.
5. **Automotive electronics:**
SiHFP31N50L-VB is also widely used in the field of automotive electronics, especially in power systems in electric vehicles (EV) and hybrid electric vehicles (HEV). It can be used in battery management, electric drive, charging system and power conversion module. With its high voltage resistance and high current carrying capacity, it ensures efficient and stable operation of the vehicle's power system.
6. **Industrial Power Control:**
This MOSFET can also be used in industrial power control systems, such as power transmission, distribution, regulation and control equipment. In industrial applications requiring high voltage and high current, SiHFP31N50L-VB as a switching device can provide reliable power conversion, reduce energy loss and extend the service life of equipment.
**Summary:**
SiHFP31N50L-VB is a high-voltage (500V), low-on-resistance (80mΩ) and high-current carrying capacity (40A) MOSFET, using SJ_Multi-EPI technology, suitable for power management, motor drive, battery management system, power inverter and automotive electronics and other fields. Its excellent current handling capability and efficient switching performance make it an ideal choice for various high-voltage applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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