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SiHFP264-E3-VB Product details

Product introduction:

Product Introduction - SiHFP264-E3-VB

**SiHFP264-E3-VB** is a high-performance **N-Channel MOSFET**, using **TO247** package, designed for high-efficiency power management applications such as medium and high voltage switching power supplies, DC-DC converters, and electric drive systems. It has a **250V** drain-source voltage (VDS) and a **60A** high current carrying capacity, ensuring stable operation in high current environments. This MOSFET uses **Trench technology** and has a low **on-resistance (RDS(ON) = 40mΩ @ VGS = 10V)**, which is very suitable for applications requiring high efficiency and low power loss, especially in switching power supplies, electric vehicles, and power electronic control. It has broad application prospects.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 250V 3.5V 60A 40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 250V 3.5V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 250V 3.5V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

- **Package type (Package)**: TO247
- **Configuration (Configuration)**: Single N-Channel MOSFET
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 60A
- **Maximum power dissipation (Pd)**: 200W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 160nC @ VDS = 150V, VGS = 10V
- **Reverse recovery time (trr)**: 120ns
- **Technology**: Trench

Domain and module applications:

Application fields and module examples

1. **High-Efficiency Switching Power Supplies**
**SiHFP264-E3-VB** is suitable for various **switching power supplies**, such as **DC-DC converters**, **AC-DC power adapters** and **high-efficiency power modules**. This MOSFET has a **250V** withstand voltage and **60A** high current capability, which can meet the needs of high voltage and high current power conversion. At the same time, its **low on-resistance** can effectively reduce power loss and improve power conversion efficiency. Especially in **industrial power supplies**, **high-efficiency home appliance power supplies** and **computer power supplies** and other applications, it can provide higher reliability and efficiency.

2. **EV Battery Management & Drive Systems**
In **EVs (EVs), **SiHFP264-E3-VB** is suitable for **Battery Management Systems (BMS)** and **Electric Drive Systems**. Its high current capability enables it to handle high current loads during battery charging and discharging, while its low **RDS(ON)** improves the power conversion efficiency of the overall system. This MOSFET is also an ideal choice for high-voltage conversion applications during battery charging, and can be used in **EV charging stations** or **battery inverters** to ensure safe, stable and efficient battery management and energy conversion.

3. **Power Modules and Inverters**
**SiHFP264-E3-VB** can be widely used in **power inverters**, **solar inverters** and **wind power generation systems**. In these applications, MOSFETs need to handle high voltage and high current loads, and have extremely high requirements for efficiency and stability. **SiHFP264-E3-VB**'s **250V** drain-source voltage makes it very suitable for power conversion devices such as **battery inverter** or **solar photovoltaic inverter**, which can efficiently convert direct current (DC) into alternating current (AC) and provide it to homes or industrial facilities.

4. **Motor Control and Drive Systems**
This MOSFET is also suitable for various **motor control systems**, especially **brushless DC motor (BLDC)** or **AC motor (AC) drive systems**. In power tools, electric bicycles, robots and other equipment, **SiHFP264-E3-VB** can effectively control the operation of the motor, provide stable power conversion, and ensure the efficient operation of the electric drive system. Its high current capability, low on-resistance and low switching loss enable it to maintain excellent performance during motor startup and high-speed operation.

5. **Automotive Electronics**
In the field of **automotive electronics**, **SiHFP264-E3-VB** can be used in **automotive charging management systems**, **battery monitoring systems** and **electric drive modules**. This MOSFET has good voltage resistance and current carrying capacity, and is suitable for battery management, energy conversion and electric drive of **electric vehicles** and **hybrid vehicles**. High-efficiency power conversion, low-loss on-resistance and excellent switching performance are indispensable core components in modern automotive power systems.

6. **LED Drivers and Lighting Control**
**SiHFP264-E3-VB** also performs well in **LED drivers** and **lighting control systems**. LED drivers usually require stable current and voltage control to ensure efficient and stable operation of **LED light sources**. Due to the low on-resistance and high current carrying capacity of this MOSFET, it is very suitable for high-efficiency **LED lighting driver modules** and **intelligent lighting control systems**, reducing energy loss and improving the overall efficiency of the system.

7. **Power Switching and Energy Management**
As a **high-efficiency switching element**, **SiHFP264-E3-VB** is widely used in **power switching systems** and **energy management systems**. Its high voltage resistance and high current capability enable it to provide precise switching control in **battery protection systems** and **power load control**, ensuring stable and safe operation of the equipment. Whether in **home automation systems** or **industrial energy management**, SiHFP264-E3-VB is an ideal choice for efficient power conversion and management.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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