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SiHFP244-VB Product details

Product introduction:

Product Introduction: SiHFP244-VB MOSFET

**SiHFP244-VB** is a high-efficiency single N-channel MOSFET in a **TO247 package**, designed as a high-performance switching element for medium and high power applications. The maximum drain-source voltage (VDS) of this MOSFET is 250V, which is suitable for high-voltage power management, power conversion and other systems. Its gate threshold voltage (Vth) is 3.5V, which has a low threshold voltage and can be turned on quickly at a low gate voltage, optimizing switching speed and efficiency.

The **on-resistance** (RDS(ON)) of SiHFP244-VB is 40mΩ@VGS=10V, which has low conduction loss and high current carrying capacity. Its maximum drain current (ID) is 60A, ensuring that it can still operate efficiently under high current load. This MOSFET adopts **Trench technology**, providing excellent conductivity, low heat loss and high frequency operation capability. Due to these characteristics, the SiHFP244-VB is ideal for use in high-power electronics, power conversion systems, and motor drives.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 250V 3.5V 60A 40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 250V 3.5V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 250V 3.5V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description:

- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 250V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 40mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 60A
- **Technology**: Trench technology

Domain and module applications:

Applicable fields and modules:

1. **High-efficiency power management system**:
**SiHFP244-VB** is particularly suitable for **power conversion** and **power management systems**, such as DC-DC converters, AC-DC power adapters, and industrial power modules, due to its low on-resistance and high current carrying capacity. This MOSFET can provide low power loss at high current, so it is very suitable for power management systems that require high efficiency and long operation. It can achieve low temperature rise and high-efficiency current conversion in the power system, improving the overall power utilization.

2. **Motor drive system**:
In motor drive control, **SiHFP244-VB** can provide reliable high-current switching capability, especially for motor control modules that require high current and high-frequency regulation, such as variable frequency drives (VFDs) and industrial motor drive systems. Its low RDS(ON) characteristics enable it to efficiently switch high-current loads, thereby achieving precise control and high-efficiency operation of the motor and reducing the heat loss of the system.

3. **Battery Management System (BMS)**:
Battery Management System (BMS) requires efficient current regulation and control to ensure safe and efficient use of batteries. **SiHFP244-VB**'s high current carrying capacity and low on-resistance make it ideal for battery charge and discharge management systems, especially in electric vehicles (EV) and energy storage systems. This MOSFET can effectively control the battery's charging and discharging process, improving the efficiency of battery management while maintaining efficient operation of the system.

4. **Solar Inverter**:
**SiHFP244-VB** is also widely used in solar inverters to convert the DC power generated by solar panels into AC power. MOSFET can provide efficient switching control in high voltage and high current environments to ensure efficient operation of solar power generation systems. Its low RDS(ON) characteristics reduce energy losses during power conversion and improve the efficiency of the entire system.

5. **Automotive Electronic Systems**:
In modern automotive electronic systems, especially electric vehicles (EV) and hybrid electric vehicles (HEV), **SiHFP244-VB** can be used in modules such as electric drive, battery charging system, and auxiliary power management. Its high current carrying capacity (60A) enables it to handle high current loads in automotive power control modules, especially in electric drive systems and charging management systems, ensuring efficient energy conversion and reliability.

6. **Industrial Power Control and Automation**:
In the field of industrial power control and automation, **SiHFP244-VB** is suitable for a variety of applications that require high current and high voltage switching, such as power regulation systems, industrial motor drive control, and start-stop control of high-power loads. This MOSFET can provide extremely low on-resistance and efficient switching capabilities to meet the power control needs under high load environments while reducing energy waste and heat loss.

7. **UPS (Uninterruptible Power Supply) System**:
In UPS (Uninterruptible Power Supply) system, **SiHFP244-VB** can be used as one of the core switching components to improve the overall efficiency of the UPS system through its high current handling capability and low loss characteristics. It can ensure fast switching of power during power failures while maintaining stable system operation, reducing system heat, and improving equipment stability and service life.

Through **Trench technology**, **SiHFP244-VB** MOSFET provides low on-resistance, lower switching losses and high current carrying capacity, making it excellent in multiple fields, especially high-power applications such as power management, motor drive, and battery management. It is suitable for the core control and power conversion systems of various medium and high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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