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SiHFP23N50L-VB Product details
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The SiHFP23N50L-VB is a unipolar N-type MOSFET in a TO247 package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) capability of 500V, the device is suitable for high voltage switching power supplies, power converters, motor drives and other applications that require high voltage handling. By adopting SJ_Multi-EPI technology, it is able to provide low on-resistance (RDS(ON)=80mΩ@VGS=10V), good conductivity and thermal stability. The SiHFP23N50L-VB can carry a maximum current of 40A at a gate voltage of 10V, providing efficient switching performance, and is very suitable for power management, charging systems, DC-DC converters and industrial power control.
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The SiHFP23N50L-VB is a unipolar N-type MOSFET in a TO247 package, suitable for high voltage and high current applications. With a drain-source voltage (VDS) capability of 500V, the device is suitable for high voltage switching power supplies, power converters, motor drives and other applications that require high voltage handling. By adopting SJ_Multi-EPI technology, it is able to provide low on-resistance (RDS(ON)=80mΩ@VGS=10V), good conductivity and thermal stability. The SiHFP23N50L-VB can carry a maximum current of 40A at a gate voltage of 10V, providing efficient switching performance, and is very suitable for power management, charging systems, DC-DC converters and industrial power control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
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- **Package:** TO247
- **Configuration:** Unipolar N-type
- **Drain-Source Voltage (VDS):** 500V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.8V
- **On-Resistance (RDS(ON)):** 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID):** 40A
- **Technology:** SJ_Multi-EPI
- **Maximum Power Dissipation:** 150W (Typical, depending on operating conditions and ambient temperature)
- **Operating Temperature Range:** -55°C to +150°C
- **Forward Gate Current:** 100mA
- **Drain Current (ID) Range:** -40A Up to +40A (specific current depends on operating conditions and thermal management)
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- **Package:** TO247
- **Configuration:** Unipolar N-type
- **Drain-Source Voltage (VDS):** 500V
- **Gate-Source Voltage (VGS):** ±30V
- **Threshold Voltage (Vth):** 3.8V
- **On-Resistance (RDS(ON)):** 80mΩ @ VGS = 10V
- **Maximum Drain Current (ID):** 40A
- **Technology:** SJ_Multi-EPI
- **Maximum Power Dissipation:** 150W (Typical, depending on operating conditions and ambient temperature)
- **Operating Temperature Range:** -55°C to +150°C
- **Forward Gate Current:** 100mA
- **Drain Current (ID) Range:** -40A Up to +40A (specific current depends on operating conditions and thermal management)
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Domain and module applications：
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1. **Power Management System:**
The SiHFP23N50L-VB is suitable for high-power power systems, especially where high voltage and high efficiency are required. It can operate reliably at high voltage and high current, so it is widely used in various power converters, such as high-frequency power supplies, AC-DC converters, and DC-DC step-up and step-down modules.
2. **Motor Drive:**
This MOSFET can be used in motor control systems, especially in industrial motors and household appliances. With its high withstand voltage and low on-resistance, the SiHFP23N50L-VB can effectively drive the motor, provide stable power transmission, reduce power consumption, and improve system efficiency.
3. **Charging System:**
This MOSFET is suitable for use in battery chargers and electric vehicle (EV) charging systems. Due to its low RDS(ON) and high withstand voltage, SiHFP23N50L-VB can improve charging efficiency and extend device life, especially in scenarios that require high efficiency and long-duration workloads.
4. **Power Inverter:**
In solar inverters and other energy conversion devices, SiHFP23N50L-VB is able to provide reliable power conversion in high-voltage applications due to its high voltage capability and low on-resistance. It provides precise switching control in power inverters, improving efficiency and reducing heat.
5. **Automotive Applications:**
This MOSFET is suitable for automotive power electronic modules, including electric vehicle powertrains, battery management systems, and auxiliary power systems. Its high withstand voltage and high current carrying capabilities enable it to handle power conversion needs in automotive battery management and motor control.
**Summary:**
SiHFP23N50L-VB is a MOSFET with high withstand voltage (500V), low on-resistance (80mΩ) and large current carrying capacity (40A). It adopts SJ_Multi-EPI technology and is suitable for use in high-efficiency power management, motor drive, charging system, power inverter and automotive power electronics.
1. **Power Management System:**
The SiHFP23N50L-VB is suitable for high-power power systems, especially where high voltage and high efficiency are required. It can operate reliably at high voltage and high current, so it is widely used in various power converters, such as high-frequency power supplies, AC-DC converters, and DC-DC step-up and step-down modules.
2. **Motor Drive:**
This MOSFET can be used in motor control systems, especially in industrial motors and household appliances. With its high withstand voltage and low on-resistance, the SiHFP23N50L-VB can effectively drive the motor, provide stable power transmission, reduce power consumption, and improve system efficiency.
3. **Charging System:**
This MOSFET is suitable for use in battery chargers and electric vehicle (EV) charging systems. Due to its low RDS(ON) and high withstand voltage, SiHFP23N50L-VB can improve charging efficiency and extend device life, especially in scenarios that require high efficiency and long-duration workloads.
4. **Power Inverter:**
In solar inverters and other energy conversion devices, SiHFP23N50L-VB is able to provide reliable power conversion in high-voltage applications due to its high voltage capability and low on-resistance. It provides precise switching control in power inverters, improving efficiency and reducing heat.
5. **Automotive Applications:**
This MOSFET is suitable for automotive power electronic modules, including electric vehicle powertrains, battery management systems, and auxiliary power systems. Its high withstand voltage and high current carrying capabilities enable it to handle power conversion needs in automotive battery management and motor control.
**Summary:**
SiHFP23N50L-VB is a MOSFET with high withstand voltage (500V), low on-resistance (80mΩ) and large current carrying capacity (40A). It adopts SJ_Multi-EPI technology and is suitable for use in high-efficiency power management, motor drive, charging system, power inverter and automotive power electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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