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SiHFP22N60K-VB Product details

Product introduction:

SiHFP22N60K-VB Product Introduction

SiHFP22N60K-VB is a high-performance single N-channel power MOSFET in TO247 package, suitable for various power management, power conversion and switching applications. The maximum drain-source voltage of this MOSFET is 650V and the maximum drain current is 20A. Its low on-resistance (RDS(ON)) is 160mΩ at VGS = 10V, which helps to reduce energy loss and improve efficiency. The product adopts SJ_Multi-EPI technology, with high reliability and stability, suitable for high voltage and high current applications such as power tools, power adapters, industrial control, and electric vehicles.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 650V 3.5V 20A 160mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 650V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description

- **Package type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 160mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 20A
- **Power dissipation (PD)**: Max. 100W
- **Switching frequency**: Suitable for high-frequency switching applications
- **Maximum junction temperature**: 150°C
- **Operating temperature range**: -55°C to +150°C
- **Reverse recovery time (Trr)**: Typical value is 120ns

Domain and module applications:

Application fields and module examples

SiHFP22N60K-VB is widely used in power management and conversion systems that require high voltage and high current due to its high performance and low on-resistance. The following are the main application fields of this MOSFET:

1. **Power adapter and switching power supply (SMPS)**
SiHFP22N60K-VB can be used in efficient power adapters and switching power supplies, especially under high voltage and high current conditions. Its low on-resistance and fast switching characteristics can significantly improve power conversion efficiency, reduce power loss, and reduce temperature rise. It is widely used in consumer electronics, industrial equipment and home appliances.

2. **Power tools and home appliances**
In power tools and home appliances, SiHFP22N60K-VB is used as a power switching device to provide precise current control and efficient power conversion. Its high voltage resistance and high current carrying capacity are suitable for motor drive and power control modules of these devices to ensure smooth and efficient operation of the equipment.

3. **Automotive electronics and battery management systems (BMS)**
This MOSFET is widely used in battery management systems (BMS) in fields such as electric vehicles (EVs) and hybrid electric vehicles (HEVs), responsible for battery charging, discharging control and power distribution. The high voltage tolerance and fast switching capability of SiHFP22N60K-VB ensure the stability and high efficiency of the battery management system, supporting efficient energy management of electric vehicles.

4. **Solar inverters and energy storage systems**
In solar power generation systems and energy storage systems, SiHFP22N60K-VB can be used as a power switching element of the inverter to help convert DC power into AC power. The high voltage tolerance and high efficiency of this MOSFET are suitable for the power conversion part of solar inverters, UPS (uninterruptible power supply) and energy storage systems, improving system efficiency and reducing energy loss.

5. **Industrial Automation and Motor Control**
In the field of industrial automation, SiHFP22N60K-VB can be used in motor drive control systems and other industrial power control applications. Its low on-resistance and high current carrying capacity enable it to provide efficient current control in harsh working environments, and is widely used in industrial motors, robot control, automation equipment and other fields.

6. **Power Amplifier and RF Applications**
SiHFP22N60K-VB is suitable for use in power amplifier and radio frequency (RF) applications due to its high withstand voltage and low on-resistance, and can operate stably under high voltage and high current conditions. It can be used in various RF devices, electromagnetic transmission and reception modules to ensure efficient and stable signal processing.

7. **High Frequency Switching and Dimming Control**
The fast switching performance of this MOSFET makes it suitable for high frequency switching and dimming control applications. In lighting dimming, motor speed regulation and other high-efficiency power conversion applications, SiHFP22N60K-VB can effectively improve efficiency and ensure stable operation of the system, suitable for a variety of home and industrial scenarios.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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