SiHFP22N50A-VB Product details
Product introduction:
SiHFP22N50A-VB is a high-performance single N-channel MOSFET in TO247 package, designed for medium to high voltage power management and power control applications. Its maximum drain-source voltage (VDS) is 500V, capable of handling higher voltage switching applications. The maximum drain current (ID) of the MOSFET is 40A, suitable for the control of high power loads. The gate threshold voltage (Vth) is 3.8V, ensuring that the MOSFET can operate stably under common gate drive voltages. The on-resistance (RDS(ON)) is 80mΩ @VGS=10V, providing low power loss and high efficiency. Using SJ_Multi-EPI technology, this MOSFET performs well in high voltage and high current applications, and is widely used in industrial power control, energy conversion and power management.
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**SiHFP22N50A-VB MOSFET
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 500V | 3.8V | 40A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Model**: SiHFP22N50A-VB
- **Package Type**: TO247
- **Configuration**: Single-N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 500V
- **Gate-Source Voltage (VGS)**: ±30V
- **Gate Threshold Voltage (Vth)**: 3.8V
- **On-Resistance (RDS(ON))**:
- 80mΩ @VGS=10V
- **Maximum Drain Current (ID)**: 40A
- **Technology Type**: SJ_Multi-EPI Technology
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**SiHFP22N50A-VB MOSFET
Domain and module applications:
1. **High-efficiency power management**
The SiHFP22N50A-VB MOSFET is suitable for high-voltage power management applications such as DC-DC converters. Its maximum drain voltage of 500V and drain current of 40A enable it to be used in battery management systems, electric vehicle chargers, and high-efficiency power adapters. In particular, this MOSFET can provide excellent performance and long-term stability in situations where efficient power conversion and low conduction losses are required.
2. **Electric Vehicle (EV) Battery Management System**
In electric vehicles (EV) and hybrid electric vehicles (HEV), the SiHFP22N50A-VB can be used in high-voltage battery management systems and power conversion modules. With its high voltage resistance and high current carrying capacity, this MOSFET is suitable for battery charging and discharging control, ensuring efficient and reliable power transmission.
3. **Inverter**
SiHFP22N50A-VB is suitable for solar inverters, wind power inverters, and other high voltage inverter applications. Its high withstand voltage characteristics enable it to work stably when converting DC power to AC power, so it performs well in power conversion systems in the field of renewable energy. In addition, it is widely used in power conversion and distribution in industrial power transmission and renewable energy power stations.
4. **Industrial Power Control**
In industrial automation and power control applications, SiHFP22N50A-VB can be used as a power switch to drive motors and other high power loads. Especially in high-power motor control, variable frequency drive (VFD) and power conversion equipment, it can stably carry high voltage and high current, provide efficient switching operation, reduce losses and improve overall system efficiency.
5. **Switching Power Supply (SMPS)**
This MOSFET is also widely used in switching power supply (SMPS) design, especially in applications that require high withstand voltage and low power consumption. The high voltage tolerance (500V) and low on-resistance (80mΩ @VGS=10V) of SiHFP22N50A-VB make it suitable for use in server power supplies, communication equipment power supplies, and other high-efficiency power modules to ensure stable operation and low heat loss of the system.
6. **High-voltage power conversion**
In high-voltage power conversion applications, SiHFP22N50A-VB can be used as a switch control element in high-voltage power systems, UPS power supplies, and power transmission and distribution equipment. Due to its high drain voltage (500V) and low on-resistance, it can efficiently convert power, reduce system losses, and improve the overall efficiency of the power system.
7. **Battery charger**
In battery chargers and battery management systems (BMS), SiHFP22N50A-VB MOSFET is used as a power switch for battery charging control in high-voltage environments. Its low on-resistance and high withstand voltage enable it to provide stable performance in fast charging and battery protection systems, ensuring high efficiency and safety during the charging process.
Through these applications, the SiHFP22N50A-VB MOSFET provides an efficient power management and power conversion solution, especially suitable for power systems requiring high withstand voltage, low power consumption and high reliability.
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