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SiHFP054-VB Product details

Product introduction:

Product Introduction: SiHFP054-VB MOSFET

**SiHFP054-VB** is a single N-channel MOSFET packaged in TO247, using **Trench technology**, designed for high-power, high-efficiency applications. Its maximum drain-source voltage (VDS) is 60V, and its maximum gate-source voltage (VGS) is ±20V, which is suitable for power control and power conversion systems in the medium voltage range. The gate threshold voltage (Vth) of this MOSFET is 2.5V, which has a low switching threshold and can start quickly at low gate voltage. Its on-resistance (RDS(ON)) is 7mΩ@VGS=10V, with extremely low conduction loss and high power efficiency, making it very suitable for high-efficiency power management systems.

**SiHFP054-VB** has a maximum drain current (ID) of 150A, which makes it perform well in handling high current applications. It is suitable for power management, motor drive, battery management system (BMS) and other fields that require high current, high efficiency and high switching frequency. The design using **Trench technology** ensures excellent conductivity and low heat loss, ensuring the stability and long-term reliability of the device under high current load.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 60V 2.5V 150A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 60V 2.5V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 60V 2.5V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Detailed parameter description:

- **Package**: TO247
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 150A
- **Technology**: Trench technology

Domain and module applications:

Applicable fields and modules:

1. **High-efficiency power management system**:
**SiHFP054-VB** performs particularly well in high-efficiency power management applications. Its extremely low on-resistance (7mΩ@VGS=10V) enables it to reduce power loss and improve energy efficiency, making it particularly suitable for power adapters, DC-DC converters, and power regulation modules. Especially under high-power loads, MOSFET can achieve precise current control and efficient power conversion, ensuring stable operation of the system and reducing heat and energy waste.

2. **Motor drive control**:
In motor drive systems, **SiHFP054-VB** can provide efficient current switching capabilities, which is particularly suitable for high-current drive scenarios. Whether it is a variable frequency drive (VFD) or motor control for power tools and electric vehicles, MOSFET can provide efficient current regulation, reduce system heat loss, and improve the power density and operating efficiency of the drive system.

3. **Battery Management System (BMS)**:
**SiHFP054-VB**'s high current capability (150A) makes it an ideal choice for battery management systems (BMS). MOSFET can efficiently control the battery charging and discharging process, especially in applications such as electric vehicles and energy storage devices, helping to achieve efficient battery charging and discharging management, ensuring that the battery operates efficiently and safely during operation. By reducing power loss, the battery life is extended and the overall efficiency of the system is improved.

4. **Power Regulation and Power Conversion**:
**SiHFP054-VB** is suitable for various power conversion and regulation systems, especially in high-power applications such as UPS (uninterruptible power supply), power converters and inverters. In these applications, MOSFET plays the role of switching and current regulation, and can work stably under high load conditions. The low on-resistance characteristics ensure high efficiency and low loss, which is suitable for power systems requiring fast switching and high efficiency.

5. **Electric vehicles and electric vehicles**:
In the drive systems of electric vehicles and electric vehicles, **SiHFP054-VB** can provide efficient power control and support high-current battery discharge and motor drive. Electric vehicles, two-wheel electric vehicles and other fields require MOSFETs with fast current response to achieve power control. While providing high efficiency, this MOSFET can also reduce the heat loss of the system and extend the working time and endurance of electric vehicles.

6. **Solar inverters and renewable energy systems**:
**SiHFP054-VB** is also widely used in solar inverters to convert the DC power generated by solar panels into AC power, which is supplied to the grid or directly to the load. The high current carrying capacity and low on-resistance characteristics of this MOSFET enable it to work efficiently in solar power generation systems and effectively reduce losses in the energy conversion process, thereby improving the overall efficiency of the system.

7. **High-power load switching and power control systems**:
Due to its 150A leakage current carrying capacity, **SiHFP054-VB** can be used for high-power load switching and high-current power control systems, such as start-stop control systems for high-power loads, industrial automation equipment, heavy-duty motor drives, etc. These systems usually require high-current switching elements to ensure efficient and reliable control. This MOSFET can provide stable performance in these applications and ensure safe operation under high loads.

Through **Trench technology**, **SiHFP054-VB** MOSFET provides low on-resistance, high switching efficiency and high current carrying capacity, making it an ideal choice for high-efficiency, low-loss applications, especially suitable for high-power power management, motor control, battery management and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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