SiHFP048R-VB Product details
Product introduction:
**SiHFP048R-VB** is a high-performance **N-channel MOSFET** in a **TO247** package, designed for **high power applications**. With a **60V** maximum drain-source voltage (VDS) and **150A** maximum drain current (ID), the device can handle high current loads and has an extremely low on-resistance (**RDS(ON) = 7mΩ @ VGS = 10V**). The use of **Trench technology** gives the MOSFET excellent switching characteristics and low conduction losses in high-frequency applications. Its **2.5V** **threshold voltage (Vth)** ensures that it can be enabled at a low gate-source voltage, thereby improving system efficiency. The design of this model makes it particularly suitable for applications that require high current switching, such as power conversion, motor drive, and DC-DC converters.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | 7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 60V | 2.5V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- **Package type**: TO247
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- **7mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Maximum power dissipation**: 200W (depending on temperature)
- **Operating temperature range**: -55°C to +150°C
- **Junction temperature (TJ)**: 150°C
- **RθJC (junction-to-body thermal resistance)**: 0.6°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 30°C/W
- **Technology**: Trench
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: High switching speed and low conduction loss, suitable for high-power, high-frequency circuits.
Domain and module applications:
1. **Power conversion and DC-DC converter**
**SiHFP048R-VB** has great advantages in **power conversion** and **DC-DC converter** applications. Its **low RDS(ON)** characteristics greatly reduce the conduction loss during the voltage conversion process and improve the conversion efficiency of the system. It is particularly suitable for **high-power power modules** and **12V/24V power conversion systems**, when **large current** output is required (such as for server power supplies, communication equipment, UPS power systems, etc.).
2. **Motor drive circuit**
This **MOSFET** can carry **150A of current**, making it very suitable for **motor drive circuits**, especially in **industrial motors** and **automotive motor drives**, where it can efficiently control current and provide stable power output. It can be used as an efficient switching element for motors, especially in **inverter** and **motor controller** systems.
3. **High-frequency switching power supply**
**SiHFP048R-VB** is suitable for **high-frequency switching power supply** (such as **RF power supply**, **pulse power supply**, etc.). Its extremely low on-resistance and good switching characteristics make it an ideal choice for high-frequency power supply applications. This product performs well in the switching process of high-frequency signals, can effectively reduce switching losses and improve frequency response, and is widely used in **wireless communication equipment**, **radar systems** and **satellite communication systems**.
4. **Battery Management System (BMS)**
In the **battery management system** (BMS), the low on-resistance and high current carrying capacity (**150A**) of SiHFP048R-VB can provide efficient power switching for battery charge and discharge control. It can be used in **battery equalizer** and **battery charger circuits** to help maintain battery health, control battery voltage and current, and ensure stable operation of the battery system under various working conditions.
5. **High-power LED driver circuit**
In **high-power LED driver** circuit, **SiHFP048R-VB** provides efficient switching performance, ensures stable current output, and avoids excessive power loss. Especially in **automotive LED lighting** and **industrial LED lighting systems**, it can ensure that LEDs work under high current without causing excessive heat accumulation, improving the efficiency and life of LED light sources.
6. **Inverter and UPS power supply**
**SiHFP048R-VB** is also widely used in **inverter** and **UPS power supply** systems, which can provide reliable current switching and ensure stable high power output of the system. It is suitable for various power application scenarios, such as **home inverter**, **solar inverter**, **uninterruptible power supply system** (UPS), etc. It provides excellent performance under high power load and fast response conditions.
Technical support:
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