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SIHFL214T-E3-VB Product details
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SIHFL214T-E3-VB is a single N-channel MOSFET in a SOT223 package, designed for low to medium power applications. This MOSFET has a maximum drain-source voltage (VDS) of 250V, suitable for general low-voltage power management and switch control. Its maximum drain current (ID) is 0.79A, which can meet some low-power power or load control requirements. The gate threshold voltage (Vth) is 3V, which allows the MOSFET to work effectively at a lower gate voltage, enhancing the flexibility of the application. The on-resistance (RDS(ON)) is 2000mΩ @VGS=10V, ensuring low power loss during the switching process. SIHFL214T-E3-VB uses Trench technology to provide stable operating performance, especially suitable for switching circuits, load control and power management systems in low-power electronic devices.
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**SIHFL214T-E3-VB MOSFET
SIHFL214T-E3-VB is a single N-channel MOSFET in a SOT223 package, designed for low to medium power applications. This MOSFET has a maximum drain-source voltage (VDS) of 250V, suitable for general low-voltage power management and switch control. Its maximum drain current (ID) is 0.79A, which can meet some low-power power or load control requirements. The gate threshold voltage (Vth) is 3V, which allows the MOSFET to work effectively at a lower gate voltage, enhancing the flexibility of the application. The on-resistance (RDS(ON)) is 2000mΩ @VGS=10V, ensuring low power loss during the switching process. SIHFL214T-E3-VB uses Trench technology to provide stable operating performance, especially suitable for switching circuits, load control and power management systems in low-power electronic devices.
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**SIHFL214T-E3-VB MOSFET
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | 2000mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 250V | 3V | 0.79A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
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- **Model**: SIHFL214T-E3-VB
- **Package Type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 250V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 2000mΩ @VGS=10V
- **Maximum Drain Current (ID)**: 0.79A
- **Technology Type**: Trench Technology
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**SIHFL214T-E3-VB MOSFET
- **Model**: SIHFL214T-E3-VB
- **Package Type**: SOT223
- **Configuration**: Single-N-Channel
- **Maximum Drain-Source Voltage (VDS)**: 250V
- **Gate-Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**:
- 2000mΩ @VGS=10V
- **Maximum Drain Current (ID)**: 0.79A
- **Technology Type**: Trench Technology
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**SIHFL214T-E3-VB MOSFET
Domain and module applications：
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1. **Low Power Management**
SIHFL214T-E3-VB is ideal for low power power management applications such as regulated power supplies, battery management systems, and light load power control modules. Due to its maximum drain-source voltage of 250V and low on-resistance (2000mΩ @VGS=10V), it can be used efficiently in low voltage power conversion, reducing power losses while improving overall system efficiency.
2. **Load Switch**
In low power load switch applications, SIHFL214T-E3-VB can be used as a switching element for load switching in various small electronic devices such as home appliances, LED lamps, and other consumer electronics. Its low gate threshold voltage (Vth = 3V) enables it to be enabled at a lower gate voltage, adapting to a variety of power supply and drive configurations.
3. **Signal Switch**
This MOSFET is suitable for use as a signal switch or low power switch control, especially in low voltage and medium frequency signal switching applications. For example, in analog circuits and signal processing modules, SIHFL214T-E3-VB can be used to switch audio signals, video signals, and other types of analog signals to meet the application requirements in the fields of communications and consumer electronics.
4. **Low-power switching power supply**
In low-power DC-DC converters, SIHFL214T-E3-VB can be used for efficient power conversion, especially in devices that require small size and low power consumption. For example, it is suitable for power management in battery-powered devices, such as portable battery-powered systems, wireless devices, and small power tools.
5. **Battery-driven devices**
In portable devices such as wireless battery-powered systems, SIHFL214T-E3-VB can be used for power control of battery-driven devices. These devices usually have strict requirements on power consumption and battery life. SIHFL214T-E3-VB, with its low on-resistance and low gate voltage characteristics, is suitable for providing long-term and stable power management in such applications.
6. **Smart Home Devices**
In smart home products, SIHFL214T-E3-VB can be used in various low-power control circuits such as smart sockets, smart lighting control and sensor applications. Through efficient switching performance, it can extend the battery life of the device and ensure the reliability of the operation of smart devices.
Through these applications, SIHFL214T-E3-VB MOSFET provides an efficient and low-power power management and control solution, which is particularly suitable for electronic products and systems in the low to medium power range.
1. **Low Power Management**
SIHFL214T-E3-VB is ideal for low power power management applications such as regulated power supplies, battery management systems, and light load power control modules. Due to its maximum drain-source voltage of 250V and low on-resistance (2000mΩ @VGS=10V), it can be used efficiently in low voltage power conversion, reducing power losses while improving overall system efficiency.
2. **Load Switch**
In low power load switch applications, SIHFL214T-E3-VB can be used as a switching element for load switching in various small electronic devices such as home appliances, LED lamps, and other consumer electronics. Its low gate threshold voltage (Vth = 3V) enables it to be enabled at a lower gate voltage, adapting to a variety of power supply and drive configurations.
3. **Signal Switch**
This MOSFET is suitable for use as a signal switch or low power switch control, especially in low voltage and medium frequency signal switching applications. For example, in analog circuits and signal processing modules, SIHFL214T-E3-VB can be used to switch audio signals, video signals, and other types of analog signals to meet the application requirements in the fields of communications and consumer electronics.
4. **Low-power switching power supply**
In low-power DC-DC converters, SIHFL214T-E3-VB can be used for efficient power conversion, especially in devices that require small size and low power consumption. For example, it is suitable for power management in battery-powered devices, such as portable battery-powered systems, wireless devices, and small power tools.
5. **Battery-driven devices**
In portable devices such as wireless battery-powered systems, SIHFL214T-E3-VB can be used for power control of battery-driven devices. These devices usually have strict requirements on power consumption and battery life. SIHFL214T-E3-VB, with its low on-resistance and low gate voltage characteristics, is suitable for providing long-term and stable power management in such applications.
6. **Smart Home Devices**
In smart home products, SIHFL214T-E3-VB can be used in various low-power control circuits such as smart sockets, smart lighting control and sensor applications. Through efficient switching performance, it can extend the battery life of the device and ensure the reliability of the operation of smart devices.
Through these applications, SIHFL214T-E3-VB MOSFET provides an efficient and low-power power management and control solution, which is particularly suitable for electronic products and systems in the low to medium power range.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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