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SIHFIZ14GPBF-VB Product details
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SiHFIZ14GPBF-VB Product Introduction
**SiHFIZ14GPBF-VB** is a high-performance **N-channel MOSFET**, using **TO220F** package, designed for **high power switching and power management** applications. This product has a **60V** maximum drain-source voltage (VDS) and **45A** maximum drain current (ID), can withstand high current loads, and is widely used in fields requiring high power and high efficiency switches. Its **RDS(ON)** is only **27mΩ** at VGS = 10V, which can significantly reduce conduction losses and improve the overall energy efficiency of the system. The **1.7V** threshold voltage (Vth) of the MOSFET ensures low voltage startup, allowing the device to work efficiently at low gate-source voltage. The **Trench technology** gives it superior conduction characteristics and switching speed, and is suitable for **power conversion**, **motor drive**, **DC-DC converter** and other applications.
**SiHFIZ14GPBF-VB** is a high-performance **N-channel MOSFET**, using **TO220F** package, designed for **high power switching and power management** applications. This product has a **60V** maximum drain-source voltage (VDS) and **45A** maximum drain current (ID), can withstand high current loads, and is widely used in fields requiring high power and high efficiency switches. Its **RDS(ON)** is only **27mΩ** at VGS = 10V, which can significantly reduce conduction losses and improve the overall energy efficiency of the system. The **1.7V** threshold voltage (Vth) of the MOSFET ensures low voltage startup, allowing the device to work efficiently at low gate-source voltage. The **Trench technology** gives it superior conduction characteristics and switching speed, and is suitable for **power conversion**, **motor drive**, **DC-DC converter** and other applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | 27mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 60V | 1.7V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SiHFIZ14GPBF-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **27mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Maximum power dissipation**: 100W
- **Operating temperature range**: -55°C to +150°C
- **Junction temperature (TJ)**: 150°C
- **RθJC (junction-to-body thermal resistance)**: 3.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 60°C/W
- **Technology**: Trench
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Excellent switching speed and low conduction loss, suitable for high-frequency applications
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- **27mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Maximum power dissipation**: 100W
- **Operating temperature range**: -55°C to +150°C
- **Junction temperature (TJ)**: 150°C
- **RθJC (junction-to-body thermal resistance)**: 3.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 60°C/W
- **Technology**: Trench
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Excellent switching speed and low conduction loss, suitable for high-frequency applications
Domain and module applications：
Application fields and module examples
1. **DC-DC converter**
**SiHFIZ14GPBF-VB** is suitable for **DC-DC converter**, especially in **12V-5V** or **24V-5V** voltage conversion. It can provide low conduction loss under high current load, help improve conversion efficiency, and reduce the overall heat of the system. Due to its **low RDS(ON)** characteristics, this MOSFET has very low power loss during power conversion, which is very suitable for high-efficiency power module design.
2. **Motor drive circuit**
This **N-channel MOSFET** has a **high current carrying capacity** (45A), making it very suitable for **motor drive** circuits, especially **high-efficiency power tools** or **motor control systems in household appliances**. It can provide efficient switching control when the motor is started and running, maintain stable performance, and effectively reduce switching losses, improving system reliability and power output.
3. **Power amplifier**
In **power amplifier** circuits, **SiHFIZ14GPBF-VB** can be used as **power switch element** to provide efficient current control. Especially in **wireless communication devices** or **audio amplifier** systems, **high conductivity** and **low on-resistance** of MOSFET enable it to reduce power loss, provide higher efficiency and lower heat generation, thus improving system performance.
4. **LED drive circuit**
Due to its **low RDS(ON)** and high current carrying capacity, this MOSFET can be widely used in **LED drive circuit**. It can accurately control the current to ensure stable brightness of LED lamps, and at the same time, due to its low loss characteristics, it can extend the service life of LED lamps. It is suitable for **automotive LED lighting**, **smart home lighting** or **industrial lighting** and other fields.
5. **Power Management System**
**SiHFIZ14GPBF-VB** is also very suitable for **power management systems**, such as **AC-DC power converters** or **battery management systems**. Its **45A** maximum current carrying capacity can handle higher current loads and is suitable for high-power systems. The **low on-resistance** of the MOSFET ensures **high-efficiency power supply design**, improves power conversion efficiency and reduces energy losses.
6. **Electric Vehicle (EV) Battery Management**
This **N-channel MOSFET** can be used in **electric vehicle battery management systems** (BMS) to provide effective current switching control under high current conditions. Due to its **60V withstand voltage capability** and **up to 45A current carrying capacity**, it is suitable for current control and overvoltage protection circuits of battery packs, playing a key role in the power system of electric vehicles.
1. **DC-DC converter**
**SiHFIZ14GPBF-VB** is suitable for **DC-DC converter**, especially in **12V-5V** or **24V-5V** voltage conversion. It can provide low conduction loss under high current load, help improve conversion efficiency, and reduce the overall heat of the system. Due to its **low RDS(ON)** characteristics, this MOSFET has very low power loss during power conversion, which is very suitable for high-efficiency power module design.
2. **Motor drive circuit**
This **N-channel MOSFET** has a **high current carrying capacity** (45A), making it very suitable for **motor drive** circuits, especially **high-efficiency power tools** or **motor control systems in household appliances**. It can provide efficient switching control when the motor is started and running, maintain stable performance, and effectively reduce switching losses, improving system reliability and power output.
3. **Power amplifier**
In **power amplifier** circuits, **SiHFIZ14GPBF-VB** can be used as **power switch element** to provide efficient current control. Especially in **wireless communication devices** or **audio amplifier** systems, **high conductivity** and **low on-resistance** of MOSFET enable it to reduce power loss, provide higher efficiency and lower heat generation, thus improving system performance.
4. **LED drive circuit**
Due to its **low RDS(ON)** and high current carrying capacity, this MOSFET can be widely used in **LED drive circuit**. It can accurately control the current to ensure stable brightness of LED lamps, and at the same time, due to its low loss characteristics, it can extend the service life of LED lamps. It is suitable for **automotive LED lighting**, **smart home lighting** or **industrial lighting** and other fields.
5. **Power Management System**
**SiHFIZ14GPBF-VB** is also very suitable for **power management systems**, such as **AC-DC power converters** or **battery management systems**. Its **45A** maximum current carrying capacity can handle higher current loads and is suitable for high-power systems. The **low on-resistance** of the MOSFET ensures **high-efficiency power supply design**, improves power conversion efficiency and reduces energy losses.
6. **Electric Vehicle (EV) Battery Management**
This **N-channel MOSFET** can be used in **electric vehicle battery management systems** (BMS) to provide effective current switching control under high current conditions. Due to its **60V withstand voltage capability** and **up to 45A current carrying capacity**, it is suitable for current control and overvoltage protection circuits of battery packs, playing a key role in the power system of electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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