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SIHFIBC40G-E3-VB Product details

Product introduction:

Product Introduction - SIHFIBC40G-E3-VB

**SIHFIBC40G-E3-VB** is an **N-Channel MOSFET** in **TO220F** package, suitable for high power and medium voltage switching applications. Its **maximum drain-source voltage (VDS)** is **650V**, which is very suitable for **high voltage power management**, **power conversion**, **motor drive** and other fields. The **maximum drain current (ID)** of this MOSFET is **7A**, which has moderate current carrying capacity.

The **on-resistance (RDS(ON))** of this device is **1100mΩ**. At **VGS = 10V**, although the on-resistance is large, it is suitable for applications that require higher voltage, lower cost, and medium current carrying capacity. Using **Plannar** technology, it provides good switching characteristics and reliability, and is widely used in modules such as medium voltage power conversion, load switching and motor control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 7A 1100mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
Detailed parameter description

- **Package type (Package)**: TO220F
- **Configuration (Configuration)**: Single N-Channel MOSFET
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 1100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Maximum power dissipation (Pd)**: 75W
- **Operating temperature range (Tj)**: -55°C to 150°C
- **Gate charge (Qg)**: 100nC @ VDS = 25V, VGS = 10V
- **Reverse recovery time (trr)**: 45ns
- **Technology**: Plannar

Domain and module applications:

Application fields and module examples

1. Medium Voltage Power Converters
SIHFIBC40G-E3-VB is suitable for AC-DC converters or DC-DC converters, especially in applications that need to withstand higher voltages (up to 650V). It can be used as a high-efficiency switching device in switching power supplies (SMPS) and power conversion modules, which helps improve conversion efficiency and reduce system power losses. It is suitable for household appliances, computer power supplies, and industrial power systems.

2. Motor Drive Systems
This MOSFET can be widely used in motor drive circuits, especially in DC motor control and stepper motor drive. It is suitable for use as a switching element in motor control systems to help achieve stable current regulation and control, ensuring the reliability and stability of the system in high voltage environments. It is widely used in industrial automation, robotic systems, and home appliance control.

3. **Load Switching and High Voltage Switching Circuits**
**SIHFIBC40G-E3-VB** can also be used as a **load switch** in high voltage and high current environments. Its high drain-source voltage capability makes it suitable for use in high-power **load switching circuits**, especially in **high voltage battery management systems**, **load power switching systems** and **electrical protection circuits**, where it can reliably switch current loads and avoid current shocks and power surges.

4. **Electric Vehicles (EV)**
In the **battery management system (BMS)** of **electric vehicles**, **SIHFIBC40G-E3-VB** can be used as a **power switch** to effectively control **battery charging and discharging**, ensuring the efficiency and safety of the system. Due to its **650V** drain-source voltage, the device is suitable for use in high voltage battery management in electric vehicles and can withstand high voltage fluctuations from the battery system.

5. **Solar Inverters**
In **photovoltaic system inverters**, **SIHFIBC40G-E3-VB** can be used for **DC-AC conversion**. Photovoltaic inverters need to be able to operate at higher operating voltages, and the high **VDS** of this MOSFET can support the conversion process of photovoltaic systems, especially in situations with **high voltage and current requirements**, such as **photovoltaic power generation systems** and **green energy applications**.

6. **Power Supplies for Communication Equipment**
This MOSFET is also used in **communication equipment**, especially for high-voltage switching of power modules. It can provide stable power management for facilities such as **wireless base stations**, **communication towers**, and **data centers**, ensuring long-term operation of equipment under high voltage conditions.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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