SIHFIB9N60A-VB Product details
Product introduction:
**SIHFIB9N60A-VB** is a single N-channel MOSFET packaged in TO220F, using **Plannar technology**, designed for medium and high voltage applications. This MOSFET has a maximum drain-source voltage (VDS) of 650V, which enables it to be widely used in medium to high voltage power systems, especially in power management, motor drive and power conversion. Its gate-source voltage (VGS) is up to ±30V, and the gate threshold voltage (Vth) is 3.5V, ensuring good switching performance under standard operating conditions. The on-resistance (RDS(ON)) is 680mΩ@VGS=10V, which can effectively reduce energy loss and improve system efficiency in high power applications. The maximum drain current (ID) is 12A, which can meet the requirements of medium power power control and conversion tasks.
**SIHFIB9N60A-VB**'s **Plannar technology** provides excellent conductivity and can maintain good stability and efficiency under high voltage and high current conditions. It is particularly suitable for power converters, motor drives and various industrial power control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | 680mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 12A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO220F
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Gate threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 680mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 12A
- **Technology**: Plannar technology
Domain and module applications:
1. **Power management and DC-DC converters**:
**SIHFIB9N60A-VB** is widely used in power management and DC-DC converters. Its 650V withstand voltage and low on-resistance make it an ideal choice for efficient power conversion. In power adapters, switching power supplies, LED driver power supplies, and power tool power systems, MOSFET can stably control current and voltage, improve conversion efficiency, and reduce energy loss.
2. **Industrial motor drive systems**:
In industrial motor drive systems, **SIHFIB9N60A-VB** can be used as an efficient switching element to regulate the power control of the motor. Whether in variable frequency drive (VFD) systems or in motor control in automated production lines, this MOSFET can provide precise current regulation to support efficient operation and response of motors under high voltage power supplies.
3. **High-power inverter and speed control system**:
Due to its maximum drain-source voltage of up to 650V, **SIHFIB9N60A-VB** performs particularly well in high-power inverters, speed regulators and drive control systems. In these applications, MOSFETs are responsible for efficiently switching and regulating current to achieve precise control of equipment. In HVAC (heating, ventilation and air conditioning) systems, power tool drives, electric vehicle drives and wind power generation systems, it can provide higher operating efficiency and lower power losses.
4. **Solar inverter**:
This MOSFET is also suitable for solar inverters to convert DC power generated by solar panels into AC power and supply it to the grid or directly to the load. **SIHFIB9N60A-VB** has a voltage tolerance of 650V and can efficiently convert high-voltage DC power in solar systems. It is widely used in home and commercial-scale solar power generation systems to provide more stable and efficient power output.
5. **Battery Management System (BMS)**:
In the battery management system (BMS), **SIHFIB9N60A-VB** is used for battery charge and discharge control to ensure that the battery operates efficiently within a safe range. Especially in electric vehicles and energy storage systems, this MOSFET helps achieve precise battery management, thereby improving the battery life and the overall efficiency of the system. It can withstand higher voltages and currents and is suitable for use in large-scale energy management and electric transportation systems.
6. **High-voltage load switches and power systems**:
In applications that require high voltage and current control, **SIHFIB9N60A-VB** is used as a high-voltage load switch element. It is widely used in industrial power control systems, UPS (uninterruptible power supply) systems, high-voltage switchgear and protection circuits of power systems. Due to its excellent voltage resistance and low on-resistance, MOSFET can effectively reduce the energy loss of the system and ensure the stability and efficient operation of the power system.
7. **Power Conditioning and Battery Chargers**:
**SIHFIB9N60A-VB** is also suitable for power conditioning and battery chargers, especially for applications that require efficient and stable power conversion. It can efficiently control the power supply from the grid and effectively manage the current fluctuations during battery charging. It is suitable for power tools, electric vehicle chargers, portable battery charging equipment and energy storage devices.
Through **Plannar technology**, **SIHFIB9N60A-VB** MOSFET performs stably and efficiently in high-voltage, high-current applications. It is suitable for many fields from power management to motor drives, solar inverters and battery management. It is an ideal choice for many modern power electronic devices.
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