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SiHFIB6N60A-VB Product details

Product introduction:

SiHFIB6N60A-VB Product Introduction

**SiHFIB6N60A-VB** is a high-performance **N-channel MOSFET**, packaged in **TO220F**, designed for medium and high power switching and power management applications. The device has a maximum drain-source voltage (VDS) of **650V**, can operate stably in **high voltage environments**, and is suitable for **power electronics** and **high power switching applications**. Its **RDS(ON)** is **1100mΩ** (at VGS = 10V), which can effectively reduce conduction losses and improve efficiency. It is suitable for **power converters**, **power conditioning systems** and **motor drives** and other fields. The device also has a lower threshold voltage (Vth) of **3.5V**, which can start at a lower gate-source voltage, improving switching speed and response time.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 7A 1100mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 7A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
SiHFIB6N60A-VB Detailed parameter description

- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **1100mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Maximum power dissipation**: 75W
- **Operating temperature range**: -55°C to +150°C
- **Junction temperature (TJ)**: 150°C
- **RθJC (junction-to-case thermal resistance)**: 3.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 60°C/W
- **Technology**: Plannar
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Suitable for medium power switching and power management applications

Domain and module applications:

Application fields and module examples

1. **Power management system**
**SiHFIB6N60A-VB** can be widely used in **high voltage power management systems**, such as **DC-DC converters** and **AC-DC power converters**. Due to its **650V** withstand voltage capability, it is suitable for **high voltage input** and **medium power output** power systems. Its **lower RDS(ON)** helps reduce power loss and improve power efficiency.

2. **Power amplifier**
In **power amplifiers**, especially in **wireless communications** and **audio amplifiers**, **SiHFIB6N60A-VB** can be used as a **power switching element**. The efficient switching performance enables it to work stably under high power requirements while reducing the heat and loss of the amplifier.

3. **Motor drive systems**
Due to the **7A maximum current handling capability** and **650V** voltage tolerance of this MOSFET, it is also very suitable for **motor drive systems**. Especially in high-voltage **DC motor** or **stepper motor** drive systems, it can provide efficient current switching to ensure smooth operation of the motor and reduce power loss.

4. **Power tools and household appliances**
Due to its high voltage tolerance, **SiHFIB6N60A-VB** can be used for power conversion and motor control circuits in **power tools** and **household appliances**. In **high-voltage power tools** or **household appliances**, it can be used as a **power regulation switch** component to ensure that the equipment works normally in a high-voltage environment and provide reliable control and protection.

5. **LED drive circuit**
In **LED drivers** and **constant current sources**, **SiHFIB6N60A-VB** acts as a switching element, which can effectively regulate current and reduce power loss, ensuring efficient driving and long service life of LED lamps. Its **lower on-resistance** reduces heat generation and improves the energy efficiency of the system.

6. **High-voltage protection circuit**
The **650V** maximum **VDS** of this MOSFET makes it suitable for **high-voltage protection circuits**, such as **overvoltage protection**, **load switching**, etc. In high-voltage power supplies, it can provide stable switching performance to protect other circuits from damage during overvoltage or current fluctuations.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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