SiHFIB6N60A-VB Product details
Product introduction:
**SiHFIB6N60A-VB** is a high-performance **N-channel MOSFET**, packaged in **TO220F**, designed for medium and high power switching and power management applications. The device has a maximum drain-source voltage (VDS) of **650V**, can operate stably in **high voltage environments**, and is suitable for **power electronics** and **high power switching applications**. Its **RDS(ON)** is **1100mΩ** (at VGS = 10V), which can effectively reduce conduction losses and improve efficiency. It is suitable for **power converters**, **power conditioning systems** and **motor drives** and other fields. The device also has a lower threshold voltage (Vth) of **3.5V**, which can start at a lower gate-source voltage, improving switching speed and response time.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **1100mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Maximum power dissipation**: 75W
- **Operating temperature range**: -55°C to +150°C
- **Junction temperature (TJ)**: 150°C
- **RθJC (junction-to-case thermal resistance)**: 3.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 60°C/W
- **Technology**: Plannar
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Suitable for medium power switching and power management applications
Domain and module applications:
1. **Power management system**
**SiHFIB6N60A-VB** can be widely used in **high voltage power management systems**, such as **DC-DC converters** and **AC-DC power converters**. Due to its **650V** withstand voltage capability, it is suitable for **high voltage input** and **medium power output** power systems. Its **lower RDS(ON)** helps reduce power loss and improve power efficiency.
2. **Power amplifier**
In **power amplifiers**, especially in **wireless communications** and **audio amplifiers**, **SiHFIB6N60A-VB** can be used as a **power switching element**. The efficient switching performance enables it to work stably under high power requirements while reducing the heat and loss of the amplifier.
3. **Motor drive systems**
Due to the **7A maximum current handling capability** and **650V** voltage tolerance of this MOSFET, it is also very suitable for **motor drive systems**. Especially in high-voltage **DC motor** or **stepper motor** drive systems, it can provide efficient current switching to ensure smooth operation of the motor and reduce power loss.
4. **Power tools and household appliances**
Due to its high voltage tolerance, **SiHFIB6N60A-VB** can be used for power conversion and motor control circuits in **power tools** and **household appliances**. In **high-voltage power tools** or **household appliances**, it can be used as a **power regulation switch** component to ensure that the equipment works normally in a high-voltage environment and provide reliable control and protection.
5. **LED drive circuit**
In **LED drivers** and **constant current sources**, **SiHFIB6N60A-VB** acts as a switching element, which can effectively regulate current and reduce power loss, ensuring efficient driving and long service life of LED lamps. Its **lower on-resistance** reduces heat generation and improves the energy efficiency of the system.
6. **High-voltage protection circuit**
The **650V** maximum **VDS** of this MOSFET makes it suitable for **high-voltage protection circuits**, such as **overvoltage protection**, **load switching**, etc. In high-voltage power supplies, it can provide stable switching performance to protect other circuits from damage during overvoltage or current fluctuations.
Technical support:
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