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SiHFI830G-VB Product details
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SiHFI830G-VB Product Introduction
**SiHFI830G-VB** is a **single N-channel MOSFET** in a **TO220F package**, designed for medium power and voltage applications. The **VDS** (drain-source voltage) of this MOSFET is **650V**, making it suitable for high voltage environments. Its **Vth** (threshold voltage) is **3.5V**, and it has a relatively high **RDS(ON)** (on-resistance) of **2560mΩ**, and can withstand a maximum drain current of **4A** when operating at a gate drive voltage of 10V. **SiHFI830G-VB** uses **Plannar technology**, which enables this MOSFET to provide stable performance in conventional power conversion and switching applications, especially for systems that need to handle higher voltage loads but do not involve extremely high current requirements.
With high reliability and robust performance, this MOSFET is very suitable for applications requiring higher voltages and moderate currents, and can perform power conversion and switching operations efficiently.
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**SiHFI830G-VB** is a **single N-channel MOSFET** in a **TO220F package**, designed for medium power and voltage applications. The **VDS** (drain-source voltage) of this MOSFET is **650V**, making it suitable for high voltage environments. Its **Vth** (threshold voltage) is **3.5V**, and it has a relatively high **RDS(ON)** (on-resistance) of **2560mΩ**, and can withstand a maximum drain current of **4A** when operating at a gate drive voltage of 10V. **SiHFI830G-VB** uses **Plannar technology**, which enables this MOSFET to provide stable performance in conventional power conversion and switching applications, especially for systems that need to handle higher voltage loads but do not involve extremely high current requirements.
With high reliability and robust performance, this MOSFET is very suitable for applications requiring higher voltages and moderate currents, and can perform power conversion and switching operations efficiently.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SiHFI830G-VB Detailed parameter description
- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V – Can withstand drain-source voltage up to 650V, suitable for high voltage environment.
- **VGS (gate-source voltage): ** ±30V – The maximum gate-source voltage is ±30V, which is widely adapted to the needs of different gate drive voltages.
- **Vth (threshold voltage): ** 3.5V – It can be turned on at a lower gate-source voltage, suitable for low-voltage drive circuits.
- **RDS(ON) (on-resistance): ** 2560mΩ@VGS=10V – When the gate-source voltage is 10V, it has a higher on-resistance, suitable for applications with less extreme requirements for conduction loss.
- **ID (drain current): ** 4A – Provides moderate current carrying capacity, suitable for medium power applications.
- **Technology:** Plannar – Plannar technology for general switching and power conversion applications with stable performance.
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- **Package type: ** TO220F
- **Configuration: ** Single N-channel
- **VDS (drain-source voltage): ** 650V – Can withstand drain-source voltage up to 650V, suitable for high voltage environment.
- **VGS (gate-source voltage): ** ±30V – The maximum gate-source voltage is ±30V, which is widely adapted to the needs of different gate drive voltages.
- **Vth (threshold voltage): ** 3.5V – It can be turned on at a lower gate-source voltage, suitable for low-voltage drive circuits.
- **RDS(ON) (on-resistance): ** 2560mΩ@VGS=10V – When the gate-source voltage is 10V, it has a higher on-resistance, suitable for applications with less extreme requirements for conduction loss.
- **ID (drain current): ** 4A – Provides moderate current carrying capacity, suitable for medium power applications.
- **Technology:** Plannar – Plannar technology for general switching and power conversion applications with stable performance.
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Domain and module applications：
Applications and module examples
The **650V** drain-source voltage and **4A** drain current of the **SiHFI830G-VB** make it suitable for power conversion and power management applications that need to handle medium voltage and lower current. Here are some typical application areas of this MOSFET:
1. **Power supply unit (PSU): **
- In **power supply unit**, SiHFI830G-VB can be used as switching element for **AC-DC conversion** and **DC-DC conversion**. Due to its high drain-source voltage of 650V, it is suitable for medium power power systems, especially those applications that do not require very high current.
2. **Home appliances: **
- In **home appliances**, SiHFI830G-VB can be used for **switching power supplies** and battery management systems. Due to its medium power and current specifications, it is suitable for use in electrical equipment such as refrigerators, air conditioners, microwave ovens, etc. as a power switching device to provide stable power conversion.
3. **Automotive Power Management:**
- In **Automotive Power Management Systems**, SiHFI830G-VB is suitable for power conversion in the medium voltage range, such as **On-Board Chargers** and **Battery Management Systems (BMS)**. Its high voltage carrying capacity is suitable for battery charging and battery protection circuits, providing efficient power conversion and management for automotive electronic systems.
4. **LED Driver:**
- SiHFI830G-VB is also suitable for **LED drivers**, especially those LED lighting systems that need to handle medium voltage and current. It can be used as a current switch to control LED lamps and provide stable driving power.
5. **Industrial Power Modules:**
- In **Industrial Power Modules**, SiHFI830G-VB is suitable for industrial automation and control equipment, such as PLC power modules and other control equipment power supplies. It operates stably at higher voltages and is suitable for providing reliable power support for industrial equipment.
6. **Power Amplifier Power Supply:**
- In **Power Amplifier Power Supply** applications, the SiHFI830G-VB is also suitable for power management in audio and wireless communication equipment. The MOSFET can effectively operate at higher voltages to provide efficient power supply for power amplifiers.
7. **Power Tool Power Supply:**
- In **power tools** such as power drills and power saws, the SiHFI830G-VB can be used in **battery-driven systems**, especially in those power tools with higher voltage but less extreme current requirements.
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The **650V** drain-source voltage and **4A** drain current of the **SiHFI830G-VB** make it suitable for power conversion and power management applications that need to handle medium voltage and lower current. Here are some typical application areas of this MOSFET:
1. **Power supply unit (PSU): **
- In **power supply unit**, SiHFI830G-VB can be used as switching element for **AC-DC conversion** and **DC-DC conversion**. Due to its high drain-source voltage of 650V, it is suitable for medium power power systems, especially those applications that do not require very high current.
2. **Home appliances: **
- In **home appliances**, SiHFI830G-VB can be used for **switching power supplies** and battery management systems. Due to its medium power and current specifications, it is suitable for use in electrical equipment such as refrigerators, air conditioners, microwave ovens, etc. as a power switching device to provide stable power conversion.
3. **Automotive Power Management:**
- In **Automotive Power Management Systems**, SiHFI830G-VB is suitable for power conversion in the medium voltage range, such as **On-Board Chargers** and **Battery Management Systems (BMS)**. Its high voltage carrying capacity is suitable for battery charging and battery protection circuits, providing efficient power conversion and management for automotive electronic systems.
4. **LED Driver:**
- SiHFI830G-VB is also suitable for **LED drivers**, especially those LED lighting systems that need to handle medium voltage and current. It can be used as a current switch to control LED lamps and provide stable driving power.
5. **Industrial Power Modules:**
- In **Industrial Power Modules**, SiHFI830G-VB is suitable for industrial automation and control equipment, such as PLC power modules and other control equipment power supplies. It operates stably at higher voltages and is suitable for providing reliable power support for industrial equipment.
6. **Power Amplifier Power Supply:**
- In **Power Amplifier Power Supply** applications, the SiHFI830G-VB is also suitable for power management in audio and wireless communication equipment. The MOSFET can effectively operate at higher voltages to provide efficient power supply for power amplifiers.
7. **Power Tool Power Supply:**
- In **power tools** such as power drills and power saws, the SiHFI830G-VB can be used in **battery-driven systems**, especially in those power tools with higher voltage but less extreme current requirements.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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