中文
English
SiHFI820G-VB Product details
Back to previous pageProduct introduction：
SiHFI820G-VB Product Introduction
**SiHFI820G-VB** is an **N-channel MOSFET** in a **TO220F** package, designed for medium and high power switching applications. The device uses **Plannar technology**, has a higher **VDS** (650V) and a lower **drain-source current** (2A), suitable for applications requiring **high voltage tolerance** and **medium current load**. Its **RDS(ON)** is **1700mΩ**, providing lower conduction losses during switching operations, enabling it to achieve efficient performance in applications such as **power switching** and **power regulation**.
**SiHFI820G-VB** is an **N-channel MOSFET** in a **TO220F** package, designed for medium and high power switching applications. The device uses **Plannar technology**, has a higher **VDS** (650V) and a lower **drain-source current** (2A), suitable for applications requiring **high voltage tolerance** and **medium current load**. Its **RDS(ON)** is **1700mΩ**, providing lower conduction losses during switching operations, enabling it to achieve efficient performance in applications such as **power switching** and **power regulation**.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | 1700mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 2A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
SiHFI820G-VB Detailed parameter description
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **1700mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Maximum power dissipation**: 36W
- **Operating temperature range**: -55°C to +150°C
- **RθJC (junction-to-case thermal resistance)**: 3.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 65°C/W
- **Technology**: Plannar
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Suitable for medium power switching applications
- **Package type**: TO220F
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 650V
- **Maximum gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **1700mΩ** @ VGS = 10V
- **Maximum drain current (ID)**: 2A
- **Maximum power dissipation**: 36W
- **Operating temperature range**: -55°C to +150°C
- **RθJC (junction-to-case thermal resistance)**: 3.5°C/W
- **RθJA (junction-to-ambient thermal resistance)**: 65°C/W
- **Technology**: Plannar
- **Maximum junction temperature**: 150°C
- **Switching characteristics**: Suitable for medium power switching applications
Domain and module applications：
Application fields and module examples
1. **Power management and switching power supply**
**SiHFI820G-VB** is suitable for **power management** systems, especially in **high voltage switching power supplies** (such as **AC-DC power converters**), as a power switching element. Due to its higher **VDS** and reasonable **RDS(ON)**, it performs well in converting **medium and low power power supplies**, providing efficient power conversion, reducing power consumption and heat.
2. **Power amplifier**
This MOSFET can be widely used in **power amplifiers**, especially in **wireless communications** and **audio amplifiers**. Through efficient switching, it can achieve effective management of power supply, ensure the stability of power transmission, and reduce heat loss in amplifier systems.
3. **Motor drive**
In **motor drive circuits**, **SiHFI820G-VB** can be used for **motor drive and control**, especially for small motors that require **high voltage drive**, such as **stepper motor drive**, **DC motor drive**, etc. It can quickly respond to control signals, ensure smooth operation of the motor and improve system efficiency.
4. **LED drive circuit**
In **LED drivers**, **SiHFI820G-VB** can be used for **constant current control circuits**. Due to its lower **RDS(ON)**, it can reduce power loss and heat generation, thereby ensuring stable driving of LEDs and improving the overall efficiency of the system.
5. **High-voltage switch and protection circuits**
Due to its **650V** **VDS**, **SiHFI820G-VB** is suitable for **high-voltage switch circuits**, including circuits for **overvoltage protection** or **load switching**. It can operate efficiently in high voltage environments and protect other components from overvoltage or current fluctuations.
6. **Power Regulation System**
In **power regulation** systems, especially when **medium current load** is required, **SiHFI820G-VB** can provide stable switching operation for **DC-DC converter** and **voltage regulation module**, providing accurate voltage output and maximizing efficiency.
1. **Power management and switching power supply**
**SiHFI820G-VB** is suitable for **power management** systems, especially in **high voltage switching power supplies** (such as **AC-DC power converters**), as a power switching element. Due to its higher **VDS** and reasonable **RDS(ON)**, it performs well in converting **medium and low power power supplies**, providing efficient power conversion, reducing power consumption and heat.
2. **Power amplifier**
This MOSFET can be widely used in **power amplifiers**, especially in **wireless communications** and **audio amplifiers**. Through efficient switching, it can achieve effective management of power supply, ensure the stability of power transmission, and reduce heat loss in amplifier systems.
3. **Motor drive**
In **motor drive circuits**, **SiHFI820G-VB** can be used for **motor drive and control**, especially for small motors that require **high voltage drive**, such as **stepper motor drive**, **DC motor drive**, etc. It can quickly respond to control signals, ensure smooth operation of the motor and improve system efficiency.
4. **LED drive circuit**
In **LED drivers**, **SiHFI820G-VB** can be used for **constant current control circuits**. Due to its lower **RDS(ON)**, it can reduce power loss and heat generation, thereby ensuring stable driving of LEDs and improving the overall efficiency of the system.
5. **High-voltage switch and protection circuits**
Due to its **650V** **VDS**, **SiHFI820G-VB** is suitable for **high-voltage switch circuits**, including circuits for **overvoltage protection** or **load switching**. It can operate efficiently in high voltage environments and protect other components from overvoltage or current fluctuations.
6. **Power Regulation System**
In **power regulation** systems, especially when **medium current load** is required, **SiHFI820G-VB** can provide stable switching operation for **DC-DC converter** and **voltage regulation module**, providing accurate voltage output and maximizing efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
